Abstract: A load-modulated amplifier system is disclosed having a main amplifier with drain or collector voltage bias input, and an auxiliary amplifier having a static drain or collector voltage bias input. Also disclosed is a programmable voltage bias controller having a data interface configured to receive operating traffic level data symbol data associated with a basestation. The programmable bias controller further includes a processor coupled to the data interface and configured, in response to the traffic or symbol data, to determine and apply bias levels to the carrier drain or collector bias input and the auxiliary drain or collector bias input and to provide an amplifier efficiency theoretically between 60% and 78.5% over the low traffic operation zone ?9 dB to ?15 dB backed off from amplifier peak power.

Abstract: A power amplifier with a quasi-static drain voltage adjustment is provided that has a transistor that is made from Gallium Nitride (GaN). In an exemplary aspect, the transistor is a field-effect transistor (FET) having a source, gate, and drain. The transistor is tested for process variations. Based on detected process variations, a microcontroller may raise a drain voltage to increase output power capability. Power capability of the power amplifier scales as the square of the drain voltage, so small adjustments are sufficient to offset the slow process corner while maintaining reliability.

Abstract: A Doherty amplifier system (10) is disclosed having a carrier amplifier (12) with a carrier drain bias input (14), and a peak amplifier (24) having a peak drain bias input (26), and a peak gate bias input (28). Also included is a programmable bias controller (40) having a data interface configured to receive peak-to-average power ratio (PAPR) data associated with a basestation. The programmable bias controller (40) further includes a processor (46) coupled to the data interface and configured, in response to the PAPR data, to determine and apply bias levels to the carrier drain bias input (14), the peak drain bias input (26), and the peak gate bias input (28) to provide an amplifier efficiency between 30% and 78.5%.

Abstract: A load-modulated amplifier system is disclosed having a main amplifier with drain or collector voltage bias input, and an auxiliary amplifier having a static drain or collector voltage bias input. Also disclosed is a programmable voltage bias controller having a data interface configured to receive operating traffic level data symbol data associated with a basestation. The programmable bias controller further includes a processor coupled to the data interface and configured, in response to the traffic or symbol data, to determine and apply bias levels to the carrier drain or collector bias input and the auxiliary drain or collector bias input and to provide an amplifier efficiency theoretically between 60% and 78.5% over the low traffic operation zone ?9 dB to ?15 dB backed off from amplifier peak power.

Abstract: A power amplifier with a quasi-static drain voltage adjustment is provided that has a transistor that is made from Gallium Nitride (GaN). In an exemplary aspect, the transistor is a field-effect transistor (FET) having a source, gate, and drain. The transistor is tested for process variations. Based on detected process variations, a microcontroller may raise a drain voltage to increase output power capability.

Abstract: According to the invention, a Cartesian control means (16) comprising a phase rotator (50) and a phase adjuster (52) is provided. With a method and a device according to the invention, a system is provided that is unconditionally stable with respect to non-phase alignment, regardless of input power changes, temperature and component ageing. No certain conditions need to be placed upon the control system to ensure stability, i.e. the system is non-obtrusive and requires no off-line calibration. The inclusion of the phase rotator (50) and phase adjustment techniques into the Cartesian control system makes this possible.