Patents by Inventor Mark Burgholzer

Mark Burgholzer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060073706
    Abstract: A dry etch process is described for selectively etching silicon nitride from conductive oxide material for use in a semiconductor fabrication process. Adding an oxidant in the etch gas mixture could increase the etch rate for the silicon nitride while reducing the etch rate for the conductive oxide, resulting in improving etch selectivity. The disclosed selective etch process is well suited for ferroelectric memory device fabrication using conductive oxide/ferroelectric interface having silicon nitride as the encapsulated material for the ferroelectric.
    Type: Application
    Filed: October 4, 2004
    Publication date: April 6, 2006
    Inventors: Tingkai Li, Sheng Hsu, Bruce Ulrich, Mark Burgholzer, Ray Hill