Abstract: The invention relates to printable ion-conductive and viscosity-tunable inks based on two-dimensional (2D) insulators, forming methods and applications of the inks. The 2D insulating material based printable ink includes at least one solvent; and an exfoliated composition dispersed in the at least one solvent. The exfoliated composition includes a 2D insulating material and a dispersant and stabilizing agent. The printed structures of the 2D insulating material based printable ink possess high ionic conductivity, chemical and thermal stability, and electrically insulating character, which are an ideal set of characteristics for printable battery components such as separators and solid electrolytes.

Abstract: The invention relates to two dimensional (2D) heterostructures and methods of fabricating the same. The 2D hetero structures are integration of borophene with graphene and 2D lateral and vertical hetero structures with sharp and rotationally commensurate interfaces. The rich bonding configurations of boron indicate that borophene can be integrated into a diverse range of 2D heterostructures.

Abstract: A memtransistor includes a top gate electrode and a bottom gate electrode; a polycrystalline monolayer film formed of an atomically thin material disposed between the top gate electrode and the bottom gate electrode; and source and drain electrodes spatial-apart formed on the polycrystalline monolayer film to define a channel in the polycrystalline monolayer film between the source and drain electrodes. The top gate electrode and the bottom gate electrode are capacitively coupled with the channel.

Abstract: Printable inks based on a 2D semiconductor, such as MoS2, and its applications in fully inkjet-printed optoelectronic devices are disclosed. Specifically, percolating films of MoS2 nanosheets with superlative electrical conductivity (10?2 s m?1) are achieved by tailoring the ink formulation and curing conditions. Based on an ethyl cellulose dispersant, the MoS2 nanosheet ink also offers exceptional viscosity tunability, colloidal stability, and printability on both rigid and flexible substrates. Two distinct classes of photodetectors are fabricated based on the substrate and post-print curing method. While thermal annealing of printed devices on rigid glass substrates leads to a fast photoresponse of 150 ?s, photonically annealed devices on flexible polyimide substrates possess high photoresponsivity exceeding 50 mA/W.

Abstract: One aspect of this invention relates to a method of forming a nanomaterial ink comprising providing an as-prepared (AP) semiconductor ink containing first nanosheets of at least one semiconductor; and megasonically exfoliating the AP semiconductor ink to form a megasonicated semiconductor ink containing second nanosheets of the at least one semiconductor.

Abstract: Printable inks based on a 2D semiconductor, such as MoS2, and its applications in fully inkjet-printed optoelectronic devices are disclosed. Specifically, percolating films of MoS2 nanosheets with superlative electrical conductivity (10?2 s m?1) are achieved by tailoring the ink formulation and curing conditions. Based on an ethyl cellulose dispersant, the MoS2 nanosheet ink also offers exceptional viscosity tunability, colloidal stability, and printability on both rigid and flexible substrates. Two distinct classes of photodetectors are fabricated based on the substrate and post-print curing method. While thermal annealing of printed devices on rigid glass substrates leads to a fast photoresponse of 150 ?s, photonically annealed devices on flexible polyimide substrates possess high photoresponsivity exceeding 50 mA/W.

Abstract: A composite for improving electrochemical stability of an electrochemical device, comprises graphene; and an electrode active material having microscale particles. Said microscale particles are conformally coated by said graphene.

Abstract: This invention in one aspect relates to a method of synthesizing a self-assembled mixed-dimensional heterostructure including 2D metallic borophene and 1D semiconducting armchair-oriented graphene nanoribbons (aGNRs). The method includes depositing boron on a substrate to grow borophene thereon at a substrate temperature in an ultrahigh vacuum (UHV) chamber; sequentially depositing 4,4?-dibromo-p-terphenyl on the borophene grown substrate at room temperature in the UHV chamber to form a composite structure; and controlling multi-step on-surface coupling reactions of the composite structure to self-assemble a borophene/graphene nanoribbon mixed-dimensional heterostructure. The borophene/aGNR lateral heterointerfaces are structurally and electronically abrupt, thus demonstrating atomically well-defined metal-semiconductor heterojunctions.

Abstract: In various embodiments functionalized graphene oxide(s) are provided that demonstrate improved antimicrobial activity, where the graphene oxide(s) are functionalized to increase carbon radical (·C) density.

Abstract: The invention relates to multi-atomic layer borophene and a method of synthesizing multi-atomic layer borophene. The multi-atomic layer borophene comprises bilayer (BL) borophene. The BL borophene is BL-? borophene comprising two covalently bonded ?-phase borophene monolayers and being metallic and in form of a highly faceted island with a six-fold symmetric Moiré superlattice surrounded by full-coverage intermixed SL v1/5 and v1/6 borophene. The BL-? borophene nucleates and emerges at intersections of multiple SL borophene domains. The synthesizing method includes depositing boron on a substrate with atomically flat terraces at a temperature in an ultrahigh vacuum (UHV) chamber to grow multi-atomic layer borophene beyond a full coverage of single-atomic layer (SL) borophene.

Abstract: This invention in one aspect relates to a mixed-kernel heterojunction transistor, comprising a monolayer film formed of an atomically thin material, and a network of carbon nanotubes (CNTs) vertically stacked over the monolayer film to define an overlap region of the CNT network with the monolayer film, and non-overlap regions of the monolayer film and the CNT network, wherein the overlap region is a mixed-kernel van der Waals heterojunction.

Abstract: One aspect of the invention relates to a method for fabricating a memtransistor comprising growing a polycrystalline monolayer film on a substrate, wherein the polycrystalline monolayer film contains grains defining a plurality of grain boundaries thereof; and forming an electrode array on the grown polycrystalline monolayer film, wherein the electrode array has a plurality of electrodes electrically coupled with the polycrystalline monolayer film such that each pair of electrodes defines a channel in the polycrystalline monolayer film therebetween.

Abstract: In one aspect of the invention, a dye sensitized solar cell has a counter-electrode including carbon-titania nanocomposite thin films made by forming a carbon-based ink; forming a titania (TiO2) solution; blade-coating a mechanical mixture of the carbon-based ink and the titania solution onto a substrate; and annealing the blade-coated substrate at a first temperature for a first period of time to obtain the carbon-based titania nanocomposite thin films. In certain embodiments, the carbon-based titania nanocomposite thin films may include solvent-exfoliated graphene titania (SEG-TiO2) nanocomposite thin films, or single walled carbon nanotube titania (SWCNT-TiO2) nanocomposite thin films.

Abstract: Disclosed herein are low dielectric constant (low-k) two-dimensional covalent organic framework materials that have a dielectric constant k less than 2.4, optionally less than 1.9, and are comprised of regularly porous, covalently linked, layer structures.

Abstract: A composite film usable as a separator of an electrochemical device includes hBN nanosheets and at least one polymer. The hBN nanosheets are uniformly dispersed within a matrix of said least one polymer to achieve a highly porous microstructure. Said at least one polymer comprises one or more electrically insulating and electrochemically inert polymers.

Abstract: One aspect of this invention relates to an ohmic-contact-gated transistor (OCGT), comprising a bottom gate electrode formed on a substrate; a first dielectric layer formed on the bottom gate electrode; a thin film formed of a semiconducting material on the first dielectric layer; a bottom contact formed on a part of the thin film; a second dielectric layer conformally grown on the bottom contact to result in a self-aligned dielectric extension from the bottom contact on the thin film; and a top contact formed on the second dielectric layer on the top of the bottom contact and fully overlapping with the dielectric extension to define a device channel in the thin film under the dielectric extension between the bottom contact and the top contact.

Abstract: An electrode for a lithium-ion battery includes a substrate; and a composite deposited on the substrate, wherein the composite comprises layered graphene comprising mono-, bi- and n-layered graphene, wherein n is an integer selected from 3-about 6; and nanoparticles of a material selected from a cathode active material and an anode active material, wherein the surface of each of said nanoparticles is coupled to and conformally coated with said layered graphene, and wherein said layered graphene is not graphene oxide and is not reduced graphene oxide.

Abstract: Anhydrous liquid-phase exfoliation of germanium sulfide to provide few-layer germanium sulfide, as can be incorporated into electronic devices such as but not limited to batteries and cells comprising such materials.

Abstract: One aspect of this invention relates to synthesis of borophane polymorphs by hydrogenating borophene with atomic hydrogen in ultrahigh vacuum, including growing borophene on a substrate in an ultrahigh vacuum chamber; and performing hydrogenation of the borophene in situ to obtain borophane having a diverse set of borophane polymorphs. The borophane polymorphs are metallic with modified local work functions that can be reversibly returned to pristine borophene via thermal desorption of hydrogen. Hydrogenation also provides chemical passivation such that the borophane polymorphs have negligible oxidation for multiple days following ambient exposure.

Abstract: The invention relates to a sterilizable and reusable ultraviolet-resistant elastomer composites including an elastomeric matrix comprising at least one elastomer; and an UV-resistant additive incorporated into the elastomeric matrix. The ultraviolet-resistant elastomer composite remains mechanically robust over at least 150 sterilization cycles, enabling safe reuse following ultraviolet germicidal irradiation (UVGI). Beyond N95 masks, these UVGI-compatible ultraviolet-resistant elastomer composites have potential utility in other PPE applications to address the broader issue of single-use waste.