Abstract: Lithographic apparatuses suitable for complementary e-beam lithography (CEBL) are described. In an example, a method of forming a pattern for a semiconductor structure includes forming a pattern of parallel lines above a substrate. The method also includes aligning the substrate in an e-beam tool to provide the pattern of parallel lines parallel with a scan direction of the e-beam tool. The e-beam tool includes a column having a blanker aperture array (BAA) with a staggered pair of columns of openings along an array direction orthogonal to the scan direction. The method also includes forming a pattern of cuts or vias in or above the pattern of parallel lines to provide line breaks for the pattern of parallel lines by scanning the substrate along the scan direction. A cumulative current through the column has a non-zero and substantially uniform cumulative current value throughout the scanning.

Abstract: Lithographic apparatuses suitable for complementary e-beam lithography (CEBL) are described. In an example, a method of forming a pattern for a semiconductor structure includes forming a pattern of parallel lines above a substrate. The method also includes aligning the substrate in an e-beam tool to provide the pattern of parallel lines parallel with a scan direction of the e-beam tool. The e-beam tool includes a column having a blanker aperture array (BAA) with a staggered pair of columns of openings along an array direction orthogonal to the scan direction. The method also includes forming a pattern of cuts or vias in or above the pattern of parallel lines to provide line breaks for the pattern of parallel lines by scanning the substrate along the scan direction. A cumulative current through the column has a non-zero and substantially uniform cumulative current value throughout the scanning.

Abstract: A toroidal optical device can include a ring mirror defining a toroidal optical cavity symmetric about an axis and an optical coupler situated inside the toroidal optical cavity. The optical coupler can be situated to direct an input light first received from outside the toroidal optical cavity propagating inside the toroidal optical cavity, to multiply reflect from the ring mirror inside the toroidal optical cavity. A method includes producing one or more additional ring mirrors defining a toroidal optical cavity symmetric about a sagittal axis using a first ring mirror as a master form, and affixing an optical coupler inside the optical cavity to at least one of the one or more additional ring mirrors.

Abstract: A toroidal optical device can include a ring mirror defining a toroidal optical cavity symmetric about an axis and an optical coupler situated inside the toroidal optical cavity. The optical coupler can be situated to direct an input light first received from outside the toroidal optical cavity propagating inside the toroidal optical cavity, to multiply reflect from the ring mirror inside the toroidal optical cavity. A method includes producing one or more additional ring mirrors defining a toroidal optical cavity symmetric about a sagittal axis using a first ring mirror as a master form, and affixing an optical coupler inside the optical cavity to at least one of the one or more additional ring mirrors.

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.

Abstract: Lithographic apparatuses suitable for complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction and having a pitch. Each opening of the first column of openings has a dimension in the first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The second column of openings has the pitch. Each opening of the second column of openings has the dimension in the first direction. A scan direction of the BAA is along a second direction orthogonal to the first direction. The openings of the first column of openings overlap with the openings of the second column of openings by at least 5% but less than 50% of the dimension in the first direction when scanned along the second direction.

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction and having a pitch. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The second column of openings has the pitch. A scan direction of the BAA is along a second direction, orthogonal to the first direction.

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a method of real-time alignment of a wafer situated on a stage of an e-beam tool involves collecting backscattered electrons from an underlying patterned feature of the wafer while an e-beam column of the e-beam tool writes during scanning of the stage. The collecting is performed by an electron detector placed at the e-beam column bottom. The method also involves performing linear corrections of an alignment of the stage relative to the e-beam column based on the collecting.

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a layout for a metallization layer of an integrated circuit includes a first region having a plurality of unidirectional lines of a first width and a first pitch and parallel with a first direction. The layout also includes a second region having a plurality of unidirectional lines of a second width and a second pitch and parallel with the first direction, the second width and the second pitch different than the first width and the first pitch, respectively. The layout also includes a third region having a plurality of unidirectional lines of a third width and a third pitch and parallel with the first direction, the third width and the third pitch different than the first and second widths and different than the first and second pitches.

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA is a non-universal cutter.

Abstract: A system and method for scanning the wavelength of an external cavity laser uses synchronized angular motions of two mirrors. By adjusting the angular motions in a selected ratio, it is possible to change the lasing wavelength of the cavity without mode-hops. The mode-hop free ratio of angular motions is determined by simultaneously satisfying the conditions of wavelength selected by diffraction angle from a diffraction grating, and the length of the external cavity.

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool is described. The BAA includes three distinct aperture arrays of different pitch.

Abstract: Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.

Abstract: Systems and methods are disclosed that provide a direct indication of the presence and concentration of an analyte within the external cavity of a laser device that employ the compliance voltage across the laser device. The systems can provide stabilization of the laser wavelength. The systems and methods can obviate the need for an external optical detector, an external gas cell, or other sensing region and reduce the complexity and size of the sensing configuration.

Abstract: An entrance denial security system comprises an entrance barrier closing an entrance into a secured area having a plurality of structural tubular elements with hollow cores forming a rigid integral barrier. At least one optical fiber sensor line is laced through the hollow cores of the structural elements for detecting a fault condition signifying an unauthorized intrusion attempt. A processor in communication with the fiber sensor line generates a fault signal in response to a fault signal level. A communication device operatively associated with the processor communicates the fault signal and an alarm. The system also includes a plurality of tubular elements lying a common plane and the sensor line is routed through the tubular elements. In one instance, the tubular elements are PVC pipe.

Abstract: A method is disclosed for power normalization of spectroscopic signatures obtained from laser based chemical sensors that employs the compliance voltage across a quantum cascade laser device within an external cavity laser. The method obviates the need for a dedicated optical detector used specifically for power normalization purposes. A method is also disclosed that employs the compliance voltage developed across the laser device within an external cavity semiconductor laser to power-stabilize the laser mode of the semiconductor laser by adjusting drive current to the laser such that the output optical power from the external cavity semiconductor laser remains constant.

Abstract: A method is disclosed for power normalization of spectroscopic signatures obtained from laser based chemical sensors that employs the compliance voltage across a quantum cascade laser device within an external cavity laser. The method obviates the need for a dedicated optical detector used specifically for power normalization purposes. A method is also disclosed that employs the compliance voltage developed across the laser device within an external cavity semiconductor laser to power-stabilize the laser mode of the semiconductor laser by adjusting drive current to the laser such that the output optical power from the external cavity semiconductor laser remains constant.

Abstract: Systems and methods are disclosed that provide a direct indication of the presence and concentration of an analyte within the external cavity of a laser device that employ the compliance voltage across the laser device. The systems can provide stabilization of the laser wavelength. The systems and methods can obviate the need for an external optical detector, an external gas cell, or other sensing region and reduce the complexity and size of the sensing configuration.