Patents by Inventor Mark C. Reuter
Mark C. Reuter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11299801Abstract: A physical vapor deposition (PVD) target that includes a body composed of material that is reactive with an oxygen containing atmosphere; and a non-reactive cap layer encapsulating at least a sputter surface of the body. The non-reactive cap layer is a barrier obstructing the diffusion of oxygen containing species to the body of the PVD target.Type: GrantFiled: November 13, 2019Date of Patent: April 12, 2022Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Stephen L. Brown, Bruce B. Doris, Mark C. Reuter
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Publication number: 20200080191Abstract: A physical vapor deposition (PVD) target that includes a body composed of material that is reactive with an oxygen containing atmosphere; and a non-reactive cap layer encapsulating at least a sputter surface of the body. The non-reactive cap layer is a barrier obstructing the diffusion of oxygen containing species to the body of the PVD target.Type: ApplicationFiled: November 13, 2019Publication date: March 12, 2020Inventors: Stephen L. Brown, Bruce B. Doris, Mark C. Reuter
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Patent number: 10570504Abstract: A physical vapor deposition (PVD) target that includes a body composed of material that is reactive with an oxygen containing atmosphere; and a non-reactive cap layer encapsulating at least a sputter surface of the body. The non-reactive cap layer is a barrier obstructing the diffusion of oxygen containing species to the body of the PVD target.Type: GrantFiled: April 26, 2017Date of Patent: February 25, 2020Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Stephen L. Brown, Bruce B. Doris, Mark C. Reuter
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Publication number: 20180312959Abstract: A physical vapor deposition (PVD) target that includes a body composed of material that is reactive with an oxygen containing atmosphere; and a non-reactive cap layer encapsulating at least a sputter surface of the body. The non-reactive cap layer is a barrier obstructing the diffusion of oxygen containing species to the body of the PVD target.Type: ApplicationFiled: April 26, 2017Publication date: November 1, 2018Inventors: Stephen L. Brown, Bruce B. Doris, Mark C. Reuter
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Publication number: 20180269045Abstract: A deposition tool includes a vacuum chamber and a physical vapor deposition module including a target source in the vacuum chamber. The target source includes a target material for depositing on a workpiece. An evaporator module is independent of the physical vapor deposition module and is mounted within an enclosure in the vacuum chamber. A gate is configured to selectively open the enclosure to permit evaporation of a coating element to coat the target source in the physical vapor deposition module.Type: ApplicationFiled: November 8, 2017Publication date: September 20, 2018Inventors: Stephen L. Brown, Bruce B. Doris, Mark C. Reuter
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Publication number: 20180269044Abstract: A deposition tool includes a vacuum chamber and a physical vapor deposition module including a target source in the vacuum chamber. The target source includes a target material for depositing on a workpiece. An evaporator module is independent of the physical vapor deposition module and is mounted within an enclosure in the vacuum chamber. A gate is configured to selectively open the enclosure to permit evaporation of a coating element to coat the target source in the physical vapor deposition module.Type: ApplicationFiled: March 20, 2017Publication date: September 20, 2018Inventors: Stephen L. Brown, Bruce B. Doris, Mark C. Reuter
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Patent number: 8893310Abstract: A probe for scanned probe microscopy is provided. The probe includes a cantilever beam and a tip. The cantilever beam extends along a generally horizontal axis. The cantilever beam has a crystal facet surface that is oriented at a tilt angle with respect to the generally horizontal axis. The tip projects outwardly from the crystal facet surface.Type: GrantFiled: July 2, 2012Date of Patent: November 18, 2014Assignees: International Business Machines Corporation, Cornell UniversityInventors: Mark C. Reuter, Brian A. Bryce, Bojan R. Ilic, Sandip Tiwari
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Publication number: 20140082920Abstract: An elongated member is formed which has a frontal and a distal end, and a length axis. The frontal end satisfies vacuum sealing and maneuverability specifications of a sample holder for a particle beam microscope. The elongated member includes a tubular section defining an axial cavity along the length axis, and having an orifice toward the distal end of the elongated member. The resulting device is characterized as being a sample holder for use in particle beam microscopes. The sample holder enables the examination of high aspect ratio samples by accommodating them in its axial cavity. The examination can take place without prior modification of the high aspect ratio samples.Type: ApplicationFiled: September 27, 2012Publication date: March 27, 2014Applicant: International Business Machines CorporationInventors: John A. Ott, Mark C. Reuter
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Patent number: 8683611Abstract: A high resolution AFM tip is provided which includes an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of the semiconductor cantilever, the semiconductor pyramid having an apex. The AFM tip also includes a single Al-doped semiconductor nanowire on the exposed apex of the semiconductor pyramid, wherein the single Al-doped semiconductor nanowire is epitaxial with respect to the apex of the semiconductor pyramid.Type: GrantFiled: September 10, 2012Date of Patent: March 25, 2014Assignees: International Business Machines Corporation, King Abdulaziz City for Science and TechnologyInventors: Guy Cohen, Mark C. Reuter, Brent A. Wacaser, Maha M. Khayyat
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Patent number: 8637836Abstract: An elongated member is formed which has a frontal and a distal end, and a length axis. The frontal end satisfies vacuum sealing and maneuverability specifications of a sample holder for a particle beam microscope. The elongated member includes a tubular section defining an axial cavity along the length axis, and having an orifice toward the distal end of the elongated member. The resulting device is characterized as being a sample holder for use in particle beam microscopes. The sample holder enables the examination of high aspect ratio samples by accommodating them in its axial cavity. The examination can take place without prior modification of the high aspect ratio samples.Type: GrantFiled: October 23, 2012Date of Patent: January 28, 2014Assignee: International Business Machines CorporationInventors: John A. Ott, Mark C. Reuter
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Publication number: 20140007308Abstract: A probe for scanned probe microscopy is provided. The probe includes a cantilever beam and a tip. The cantilever beam extends along a generally horizontal axis. The cantilever beam has a crystal facet surface that is oriented at a tilt angle with respect to the generally horizontal axis. The tip projects outwardly from the crystal facet surface.Type: ApplicationFiled: July 2, 2012Publication date: January 2, 2014Applicants: CORNELL UNIVERSITY, INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Mark C. Reuter, Brian A. Bryce, Bojan R. Ilic, Sandip Tiwari
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Patent number: 8539611Abstract: A method of creating a probe for scanned probe microscopy is disclosed. The method includes providing a wafer having a support wafer layer and a device layer. The method includes masking the wafer with a masking layer. The method includes removing a portion of the masking layer at the device layer. The method includes etching the wafer along the portion of the masking layer that has been removed to create a crystal facet surface that is oriented at a tilt angle. The method includes epitaxially growing a tip along the crystal facet surface.Type: GrantFiled: July 12, 2012Date of Patent: September 17, 2013Assignees: International Business Machines Corporation, Cornell UniversityInventors: Mark C. Reuter, Brian A. Bryce, Bojan R. Ilic, Sandip Tiwari
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Patent number: 8474061Abstract: A method of fabricating high resolution atomic force microscopy (AFM) tips including a single semiconductor nanowire grown at an apex of a semiconductor pyramid of each AFM tip is provided. The semiconductor nanowire that is grown has a controllable diameter and a high aspect ratio, without significant tapering from the tip of the semiconductor nanowire to its base. The method includes providing an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of said semiconductor cantilever. The semiconductor pyramid has an apex. A patterned oxide layer is formed on the AFM probe. The patterned oxide layer has an opening that exposes the apex of the semiconductor pyramid. A single semiconductor nanowire is grown on the exposed apex of the semiconductor pyramid utilizing a non-oxidized Al seed material as a catalyst for nanowire growth.Type: GrantFiled: September 10, 2012Date of Patent: June 25, 2013Assignees: International Business Machines Corporation, King Abdulaziz City for Science and TechnologyInventors: Guy Cohen, Mark C. Reuter, Brent A. Wacaser, Maha M. Khayyat
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Publication number: 20130019351Abstract: A high resolution AFM tip is provided which includes an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of the semiconductor cantilever, the semiconductor pyramid having an apex. The AFM tip also includes a single Al-doped semiconductor nanowire on the exposed apex of the semiconductor pyramid, wherein the single Al-doped semiconductor nanowire is epitaxial with respect to the apex of the semiconductor pyramid.Type: ApplicationFiled: September 10, 2012Publication date: January 17, 2013Applicants: King Abdulaziz City for Science and Technology, International Business Machines CorporationInventors: Guy M. Cohen, Mark C. Reuter, Brent A. Wacaser, Maha M. Khayyat
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Publication number: 20120331593Abstract: A method of fabricating high resolution atomic force microscopy (AFM) tips including a single semiconductor nanowire grown at an apex of a semiconductor pyramid of each AFM tip is provided. The semiconductor nanowire that is grown has a controllable diameter and a high aspect ratio, without significant tapering from the tip of the semiconductor nanowire to its base. The method includes providing an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of said semiconductor cantilever. The semiconductor pyramid has an apex. A patterned oxide layer is formed on the AFM probe. The patterned oxide layer has an opening that exposes the apex of the semiconductor pyramid. A single semiconductor nanowire is grown on the exposed apex of the semiconductor pyramid utilizing a non-oxidized Al seed material as a catalyst for nanowire growth.Type: ApplicationFiled: September 10, 2012Publication date: December 27, 2012Applicants: KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY, INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Guy M. Cohen, Mark C. Reuter, Brent A. Wacaser, Maha M. Khayyat
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Patent number: 8321961Abstract: A method of fabricating high resolution atomic force microscopy (AFM) tips including a single semiconductor nanowire grown at an apex of a semiconductor pyramid of each AFM tip is provided. The semiconductor nanowire that is grown has a controllable diameter and a high aspect ratio, without significant tapering from the tip of the semiconductor nanowire to its base. The method includes providing an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of said semiconductor cantilever. The semiconductor pyramid has an apex. A patterned oxide layer is formed on the AFM probe. The patterned oxide layer has an opening that exposes the apex of the semiconductor pyramid. A single semiconductor nanowire is grown on the exposed apex of the semiconductor pyramid utilizing a non-oxidized Al seed material as a catalyst for nanowire growth.Type: GrantFiled: October 7, 2010Date of Patent: November 27, 2012Assignees: International Business Machines Corporation, King Abdulazlz City for Science and TechnologyInventors: Guy Cohen, Mark C. Reuter, Brent A. Wacaser, Maha M. Khayyat
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Publication number: 20120090057Abstract: A method of fabricating high resolution atomic force microscopy (AFM) tips including a single semiconductor nanowire grown at an apex of a semiconductor pyramid of each AFM tip is provided. The semiconductor nanowire that is grown has a controllable diameter and a high aspect ratio, without significant tapering from the tip of the semiconductor nanowire to its base. The method includes providing an AFM probe including a semiconductor cantilever having a semiconductor pyramid extending upward from a surface of said semiconductor cantilever. The semiconductor pyramid has an apex. A patterned oxide layer is formed on the AFM probe. The patterned oxide layer has an opening that exposes the apex of the semiconductor pyramid. A single semiconductor nanowire is grown on the exposed apex of the semiconductor pyramid utilizing a non-oxidized Al seed material as a catalyst for nanowire growth.Type: ApplicationFiled: October 7, 2010Publication date: April 12, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Guy M. Cohen, Mark C. Reuter, Brent A. Wacaser, Maha M. Khayyat
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Patent number: 7915146Abstract: A catalyst particle on a substrate is exposed to reactants containing a semiconductor material in a reactor. An intrinsic semiconductor nanowire having constant lateral dimensions is grown at a low enough temperature so that pyrolysis of the reactant is suppressed on the sidewalls of the intrinsic semiconductor nanowire. Once the intrinsic semiconductor nanowire grows to a desired length, the temperature of the reactor is raised to enable pyrolysis on the sidewalls of the semiconductor nanowire, and thereafter dopants are supplied into the reactor with the reactant. A composite semiconductor nanowire having an intrinsic inner semiconductor nanowire and a doped semiconductor shell is formed. The catalyst particle is removed, followed by an anneal that distributes the dopants uniformly within the volume of the composite semiconductor nanowire, forming a semiconductor nanowire having constant lateral dimensions and a substantially uniform doping.Type: GrantFiled: October 23, 2007Date of Patent: March 29, 2011Assignee: International Business Machines CorporationInventors: Richard A. Haight, Mark C. Reuter
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Publication number: 20090102019Abstract: A catalyst particle on a substrate is exposed to reactants containing a semiconductor material in a reactor. An intrinsic semiconductor nanowire having constant lateral dimensions is grown at a low enough temperature so that pyrolysis of the reactant is suppressed on the sidewalls of the intrinsic semiconductor nanowire. Once the intrinsic semiconductor nanowire grows to a desired length, the temperature of the reactor is raised to enable pyrolysis on the sidewalls of the semiconductor nanowire, and thereafter dopants are supplied into the reactor with the reactant. A composite semiconductor nanowire having an intrinsic inner semiconductor nanowire and a doped semiconductor shell is formed. The catalyst particle is removed, followed by an anneal that distributes the dopants uniformly within the volume of the composite semiconductor nanowire, forming a semiconductor nanowire having constant lateral dimensions and a substantially uniform doping.Type: ApplicationFiled: October 23, 2007Publication date: April 23, 2009Applicant: International Business Machines CorporationInventors: Richard A. Haight, Mark C. Reuter