Abstract: The a blind spot monitor arrangement for a truck bumper includes a polymeric bumper reinforcement having a blind spot monitor, a substantially horizontal surface, a substantially vertical face and a lower reinforcement arm. The lower reinforcement arm is substantially parallel to the substantially parallel horizontal surface. The lower reinforcement arm is integral to and connecting a lower end of the rear face to the lower end of the right face. A blind spot monitor is further mounted to the integrated sensor bracket and a bumper cover encloses the blind spot monitor and the polymeric bumper reinforcement.

Abstract: Provided are hybrid electrodes comprising base structures and plugs disposed within the base structures. Also provided are selector elements comprising such hybrid electrodes and memory arrays with selector elements used for addressing individual memory cells. Specifically, the base structure and plug of a hybrid electrode have different compositions but both interface the same dielectric of the selector element. This design allows anti-parallel diode and other configurations with a very few components. The base structure and plug may have different dopants, different stoichiometry of the same alloy, or formed from completely different materials. The interfacing surface portions of a hybrid electrode may have different sizes. A combination of these surface portions (e.g., areas, surface conditions) and materials (e.g., compositions) can be used for tuning operating characteristics of selector elements using such hybrid electrodes.

Abstract: Some embodiments of the invention include an energy composition. In some embodiments, the energy composition may include an herb such as Mormon tea, a methylxanthine such as theobromine, and an active ingredient such as phenylethylamine HCl.

Abstract: Provided are superconducting circuits and method of forming thereof. A superconducting circuit may include a low loss dielectric (LLD) layer formed from one or both of polycrystalline silicon or polycrystalline germanium. The LLD layer may be formed at a low temperature (e.g., less than about 525° C.) using chemical vapor deposition (CVD). Addition of germanium may help to lower the deposition temperature and improve crystallinity of the resulting layer. The LLD layer is formed without adding silicides at the interface of the LLD layer and metal electrode. In some embodiments, an initial layer (e.g., a seed layer or a protective layer) may be formed on a metal electrode prior to forming the LLD layer. For example, the initial layer may include one of zinc sulfide, polycrystalline germanium, or polycrystalline silicon. The initial layer may be deposited at a low pressure (e.g., less than 10 Torr) to ensure higher levels of crystallinity.

Abstract: Control elements that can be suitable for nonvolatile memory device applications are disclosed. The control element can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The control element can be based on a single dielectric layer or on a multilayer dielectric stack.

Abstract: Methods and apparatuses for mobile communication device configuration are disclosed. In one example, communications are established with a computing device and a use region is identified. A mobile communication device configuration profile is selected corresponding to the use region and implemented at a mobile communication device.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). A structure including diamond-like carbon (DLC) can be used to surround the semiconductor layer of the MSM stack. The high thermal conductivity of the DLC structure may serve to remove heat from the selector device while higher currents are flowing through the selector element. This may lead to improved reliability and improved endurance.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on a silicon semiconductor layer doped with both carbon and nitrogen. The metal layer of the selector element can include conductive materials such as carbon, tungsten, titanium nitride, or combinations thereof.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). A structure including diamond-like carbon (DLC) can be used to surround the semiconductor layer of the MSM stack. The high thermal conductivity of the DLC structure may serve to remove heat from the selector device while higher currents are flowing through the selector element. This may lead to improved reliability and improved endurance.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The metal layer of the selector element can include conductive materials such as metal silicides, and metal silicon nitrides. Conductive materials of the MSM may include tantalum silicide, tantalum silicon nitride, titanium silicide, titanium silicon nitride, or combinations thereof.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a trilayer stack of diamond like carbon/silicon/diamond like carbon. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or a combination thereof.

Abstract: Methods and apparatuses for multiple RF band operation in mobile devices are disclosed. In one example, a method for dual radio frequency band operation includes operating a mobile communication device in a first radio frequency band, monitoring a RSSI associated with the mobile communication device, and switching operation of the mobile communication device to operation in a second radio frequency band responsive to the RSSI crossing a threshold RSSI value.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a photo-luminescent or electro-luminescent material. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or combinations thereof.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a photo-luminescent or electro-luminescent material. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or combinations thereof.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a silicon carbide/silicon nitride nanolaminate stack. The semiconductor layer of the selector element can include a silicon carbon nitride/silicon nitride nanolaminate stack. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or a combination thereof.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a silicon carbide/silicon nitride nanolaminate stack. The semiconductor layer of the selector element can include a silicon carbon nitride/silicon nitride nanolaminate stack. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or a combination thereof.

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can include insulator layers between the semiconductor layer and the metal layers to lower the leakage current of the device. The metal layers of the selector element can include conductive materials such as tungsten, titanium nitride, or combinations thereof.

Abstract: Methods and systems for applying separation processes to a spent caustic stream are disclosed. Methods and systems for regenerating media utilized in spent caustic separation processes are disclosed.

Abstract: Control elements that can be suitable for nonvolatile memory device applications are disclosed. The control element can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The control element can be based on a single dielectric layer or on a multilayer dielectric stack.

Abstract: Methods and apparatuses for multiple RF band operation in mobile devices are disclosed. In one example, a method for dual radio frequency band operation includes operating a mobile communication device in a first radio frequency band, monitoring a RSSI associated with the mobile communication device, and switching operation of the mobile communication device to operation in a second radio frequency band responsive to the RSSI crossing a threshold RSSI value.