Patents by Inventor Mark Crowder

Mark Crowder has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10334349
    Abstract: A language communication device in the form of headphones. The headphones have two earpieces, each of the earpieces having a speaker, a first of the earpieces having a short range receiver for receiving audible signals representative of a first language, and a second of the earpieces having a short range transceiver. A microphone input unit is also provided. A control unit connected to the earpieces has a memory device and a translation unit for translating the first language into another language. Software resides in the control unit. A momentary switch is provided for allowing a user to access the software. The language communication device also has a mechanism for receiving a content stream such as music from an external source, which content stream can be muted when the momentary switch is pressed by the user or the short range receiver detects audible signals representative of a language.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: June 25, 2019
    Inventor: Mark Crowder
  • Publication number: 20080160215
    Abstract: The invention provides a fluorocarbon coating having a reduced surface energy that has low susceptibility to molecular and particulate contamination. The fluorocarbon coating is stable and functional in vacuum. The fluorocarbon coating is stable to chemical solvents, cryogenic temperatures, and temperatures as high as 400° C. The fluorocarbon coating may be deposited as a thin film or produced as a modification to a surface of optical instruments without significant alteration of the optical characteristics. The fluorocarbon coating may reside on a textured substrate or include texturing within the process to further enhance the contamination resistant qualities of the treated surface. The fluorocarbon coating may be graded in composition throughout the coating layer. The invention can be used on surfaces that operate in aerospace environments and in dusty environments where contamination is an important consideration.
    Type: Application
    Filed: December 28, 2006
    Publication date: July 3, 2008
    Applicant: Ball Aerospace & Technologies Corp.
    Inventors: Mark Crowder, Christina Haley
  • Publication number: 20070202668
    Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed.
    Type: Application
    Filed: May 4, 2007
    Publication date: August 30, 2007
    Inventors: James Im, Robert Sposili, Mark Crowder
  • Publication number: 20070145017
    Abstract: Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed.
    Type: Application
    Filed: February 6, 2007
    Publication date: June 28, 2007
    Applicant: The Trustees Of Columbia University
    Inventors: James Im, Robert Sposili, Mark Crowder
  • Publication number: 20070107655
    Abstract: A mask with sub-resolution aperture features and a method for smoothing an annealed surface using a sub-resolution mask pattern are provided. The method comprises: supplying a laser beam having a first wavelength; supplying a mask with a first mask section having apertures with a first dimension and a second mask section with apertures having a second dimension, less than the first dimension; applying a laser beam having a first energy density to a substrate region; melting a substrate region in response to the first energy density; crystallizing the substrate region; applying a diffracted laser beam to the substrate region; and, in response to the diffracted laser beam, smoothing the substrate region surface. In some aspects of the method, applying a diffracted laser beam to the substrate area includes applying a diffracted laser beam having a second energy density, less than the first energy density, to the substrate region.
    Type: Application
    Filed: January 13, 2007
    Publication date: May 17, 2007
    Inventors: Yasuhiro Mitani, Apostolos Voutsas, Mark Crowder
  • Publication number: 20060054077
    Abstract: A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the substrate is irradiated to anneal the silicon film to crystallize a portion of the silicon film in thermal contact with the heated substrate region. A CO2 laser may be used as a heat source to heat the substrate, while a UV laser or a visible spectrum laser is used to irradiate and crystallize the film.
    Type: Application
    Filed: October 31, 2005
    Publication date: March 16, 2006
    Inventors: Apostolos Voutsas, Robert Sposili, Mark Crowder
  • Publication number: 20050255640
    Abstract: Methods for processing an amorphous silicon thin film sample into a polycrystalline silicon thin film are disclosed.
    Type: Application
    Filed: June 1, 2005
    Publication date: November 17, 2005
    Inventors: James Im, Robert Sposili, Mark Crowder
  • Publication number: 20050170568
    Abstract: A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon (a-Si) and using a MISPC process to form poly-Si film in a first area of the a-Si film. The method then anneals a second area, included in the first area, using a Laser-Induced Lateral Growth (LILaC) process. In some aspects, a 2N-shot laser irradiation process is used as the LILaC process. In some aspects, a directional solidification process is used as the LILaC process. In response to using the MISPC film as a precursor film, the method forms low angle grain boundaries in poly-Si in the second area.
    Type: Application
    Filed: April 4, 2005
    Publication date: August 4, 2005
    Inventors: Masao Moriguchi, Apostolos Voutsas, Mark Crowder
  • Publication number: 20050158995
    Abstract: A process of lateral crystallization comprises providing a silicon film on a substrate surface, exposing a localized substrate region at the substrate surface to a laser heating source, and annealing a portion of the silicon film in thermal contact with the localized substrate region by exposing the silicon film to a low-fluence optical annealing source.
    Type: Application
    Filed: February 18, 2005
    Publication date: July 21, 2005
    Inventors: Robert Sposili, Mark Crowder
  • Publication number: 20050103255
    Abstract: A process of lateral crystallization is provided for increasing the lateral growth length (LGL). A localized region of the substrate is heated for a short period of time. While the localized region of the substrate is still heated, a silicon film overlying the substrate is irradiated to anneal the silicon film to crystallize a portion of the silicon film in thermal contact with the heated substrate region. A CO2 laser may be used as a heat source to heat the substrate, while a UV laser or a visible spectrum laser is used to irradiate and crystallize the film.
    Type: Application
    Filed: November 13, 2003
    Publication date: May 19, 2005
    Inventors: Apostolos Voutsas, Robert Sposili, Mark Crowder
  • Publication number: 20050037551
    Abstract: A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon (a-Si) and using a MISPC process to form poly-Si film in a first area of the a-Si film. The method then anneals a second area, included in the first area, using a Laser-Induced Lateral Growth (LILaC) process. In some aspects, a 2N-shot laser irradiation process is used as the LILaC process. In some aspects, a directional solidification process is used as the LILaC process. In response to using the MISPC film as a precursor film, the method forms low angle grain boundaries in poly-Si in the second area.
    Type: Application
    Filed: August 13, 2003
    Publication date: February 17, 2005
    Inventors: Masao Moriguchi, Apostolos Voutsas, Mark Crowder
  • Publication number: 20050032249
    Abstract: Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed.
    Type: Application
    Filed: September 13, 2004
    Publication date: February 10, 2005
    Inventors: James Im, Robert Sposili, Mark Crowder
  • Publication number: 20050009352
    Abstract: A laser annealing mask is provided with cross-hatched sub-resolution aperture patterns. The mask comprises a first section with aperture patterns for transmitting approximately 100% of incident light, and at least one section with cross-hatched sub-resolution aperture patterns for diffracting incident light. In one aspect, a second mask section with cross-hatched sub-resolution aperture patterns has an area adjacent a vertical edge and a third mask section with cross-hatched sub-resolution aperture patterns adjacent the opposite vertical edge, with the first mask section being located between the second and third mask sections. The section with cross-hatched sub-resolution aperture patterns transmits approximately 40% to 70%, and preferably 50% to 60% of incident light energy density. In some aspects, the section with cross-hatched sub-resolution aperture patterns includes a plurality of different cross-hatched aperture patterns.
    Type: Application
    Filed: August 5, 2004
    Publication date: January 13, 2005
    Inventors: Mark Crowder, Yasuhiro Mitani, Apostolos Voutsas