Abstract: A flash memory cell of a flash memory device is illuminated with light during programming and/or erasing. The wavelength of the light is selected such that the photons impinging on the flash memory cell have an energy that approaches the barrier height (conduction band offset) of the tunnel insulator. Illuminating the flash memory cell during programming/erase increases the tunneling current through the tunnel insulator by way of the photon assisted tunneling (PAT) effect.

Abstract: Memory pages are background-relocated from a low-latency local operating memory of a server computer to a higher-latency memory installation that enables high-resolution access monitoring and thus access-demand differentiation among the relocated memory pages. Higher access-demand memory pages are background-restored to the low-latency operating memory, while lower access-demand pages are maintained in the higher latency memory installation and yet-lower access-demand pages are optionally moved to yet higher-latency memory installation.

Abstract: Memory pages are background-relocated from a low-latency local operating memory of a server computer to a higher-latency memory installation that enables high-resolution access monitoring and thus access-demand differentiation among the relocated memory pages. Higher access-demand memory pages are background-restored to the low-latency operating memory, while lower access-demand pages are maintained in the higher latency memory installation and yet-lower access-demand pages are optionally moved to yet higher-latency memory installation.

Abstract: A photonic communication system in which a host communicates bidirectionally with a target via a single optical fiber using light of the same wavelength and from the same light source. Signals flowing in opposite directions are discriminated based on polarity. Using the same fiber and light source in both directions reduces cost, complexity, and power consumption.

Abstract: Command/address and timing information is distributed to buffer integrated circuits on a module using multiple wavelengths of light modulated with the same information. Each individual wavelength of modulated light carrying command/address information is received by a corresponding single buffer device that deserializes the command/address information and communicates it electrically to memory devices(s). Likewise, each individual wavelength of modulated light carrying timing/synchronization/clock information is received by a corresponding single buffer device and used to synchronize accesses to the memory device(s). Thus, multiple buffer integrated circuits on a module each receive information from the CPU using different wavelengths of light transmitted on the same waveguide.

Abstract: Multidrop optical connections are used for an optical memory module. Multiple buffer integrated circuits on a module each receive information from the host system using different wavelengths of light transmitted on the same waveguide. Multiple buffer integrated circuits each transmit information back to the CPU using different wavelengths of light transmitted on another waveguide. Wavelength resonant ring couplers disposed on the buffer integrated circuits are used to separate the wavelength being received by a particular buffer integrated circuit from the wavelengths of light destined for other buffer integrated circuits on the same waveguide. Wavelength resonant ring modulators also disposed on the buffer integrated circuits modulate specific wavelengths of light unique to each buffer integrated circuit to transmit information to the CPU.

Abstract: An integrated circuit that includes a set of one or more logic layers that are, when the integrated circuit is stacked in an assembly with the set of stacked memory devices, electrically coupled to a set of stacked memory devices. The set of one or more logic layers include a coupled chain of processing elements. The processing elements in the coupled chain may independently compute partial results as functions of data received, store partial results, and pass partial results directly to a next processing element in the coupled chain of processing elements. The processing elements in the chains may include interfaces that allow direct access to memory banks on one or more DRAMs in the stack. These interfaces may access DRAM memory banks via TSVs that are not used for global I/O. These interfaces allow the processing elements to have more direct access to the data in the DRAM.

Abstract: Control logic within a memory control component outputs first and second memory read commands to a memory module at respective times, the memory module having memory components disposed thereon. Interface circuitry within the memory control component receives first read data concurrently from a first plurality of the memory components via a first plurality of data paths, respectively, in response to the first memory read command, and receives second read data concurrently from a second plurality of the memory components via a second plurality of data paths, respectively, in response to the second memory read command, the first plurality of the memory components including at least one memory component not included in the second plurality of the memory components and vice-versa.

Abstract: Memory pages are background-relocated from a low-latency local operating memory of a server computer to a higher-latency memory installation that enables high-resolution access monitoring and thus access-demand differentiation among the relocated memory pages. Higher access-demand memory pages are background-restored to the low-latency operating memory, while lower access-demand pages are maintained in the higher latency memory installation and yet-lower access-demand pages are optionally moved to yet higher-latency memory installation.

Abstract: The embodiments are directed to technologies for variable pitch vertical interconnect design for scalable escape routing in semiconductor devices. One semiconductor device includes a circuit die, and an array of circuit die interconnects located on the circuit die. The array includes a first triangular octant of interconnects that are organized in rows and columns, each column incrementing its number of interconnects from a first side of the first triangular octant to a second side of the first triangular octant. A pitch size between the columns increases in a first repeating pattern from the first side to the second side.

Abstract: Control logic within a memory control component outputs first and second memory read commands to a memory module at respective times, the memory module having memory components disposed thereon. Interface circuitry within the memory control component receives first read data concurrently from a first plurality of the memory components via a first plurality of data paths, respectively, in response to the first memory read command, and receives second read data concurrently from a second plurality of the memory components via a second plurality of data paths, respectively, in response to the second memory read command, the first plurality of the memory components including at least one memory component not included in the second plurality of the memory components and vice-versa.

Abstract: A resistance memory includes a resistance memory cell having a resistance memory element and a two-terminal access device in series. The two-terminal access device affects the current-voltage characteristic of the resistance memory cell. The resistance memory additionally includes a circuit to apply across the resistance memory cell a set pulse having a set polarity to set the resistance memory cell to a low-resistance state that is retained after application of the set pulse, a reset pulse having a reset polarity, opposite to the set polarity, to reset the resistance memory cell to a high-resistance state that is retained after application of the reset pulse, and a read pulse of the reset polarity and smaller in magnitude than the reset pulse to determine the resistance state of the resistance memory cell without changing the resistance state of the resistance memory cell.

Abstract: A resistance memory includes a resistance memory cell having a resistance memory element and a two-terminal access device in series. The two-terminal access device affects the current-voltage characteristic of the resistance memory cell. The resistance memory additionally includes a circuit to apply across the resistance memory cell a set pulse having a set polarity to set the resistance memory cell to a low-resistance state that is retained after application of the set pulse, a reset pulse having a reset polarity, opposite to the set polarity, to reset the resistance memory cell to a high-resistance state that is retained after application of the reset pulse, and a read pulse of the reset polarity and smaller in magnitude than the reset pulse to determine the resistance state of the resistance memory cell without changing the resistance state of the resistance memory cell.

Abstract: An imaging system includes multiple diffractive optical gratings disposed over a two-dimensional array of photosensitive pixels. The different gratings present different patterns and features that are tailored to produce point-spread responses that emphasize different properties of an imaged scene. The different responses are captured by the pixels, and data captured from the responses can be used separately or together to analyze aspects of the scene. The imaging systems can include circuitry to analyze the image data, and to support modes that select between point-spread responses, selections of the pixels, and algorithms for analyzing image data.

Abstract: A resistance memory includes a resistance memory cell having a resistance memory element and a two-terminal access device in series. The two-terminal access device affects the current-voltage characteristic of the resistance memory cell. The resistance memory additionally includes a circuit to apply across the resistance memory cell a set pulse having a set polarity to set the resistance memory cell to a low-resistance state that is retained after application of the set pulse, a reset pulse having a reset polarity, opposite to the set polarity, to reset the resistance memory cell to a high-resistance state that is retained after application of the reset pulse, and a read pulse of the reset polarity and smaller in magnitude than the reset pulse to determine the resistance state of the resistance memory cell without changing the resistance state of the resistance memory cell.

Abstract: A resistance memory includes a resistance memory cell having a resistance memory element and a two-terminal access device in series. The two-terminal access device affects the current-voltage characteristic of the resistance memory cell. The resistance memory additionally includes a circuit to apply across the resistance memory cell a set pulse having a set polarity to set the resistance memory cell to a low-resistance state that is retained after application of the set pulse, a reset pulse having a reset polarity, opposite to the set polarity, to reset the resistance memory cell to a high-resistance state that is retained after application of the reset pulse, and a read pulse of the reset polarity and smaller in magnitude than the reset pulse to determine the resistance state of the resistance memory cell without changing the resistance state of the resistance memory cell.

Abstract: An imaging system includes multiple diffractive optical gratings disposed over a two-dimensional array of photosensitive pixels. The different gratings present different patterns and features that are tailored to produce point-spread responses that emphasize different properties of an imaged scene. The different responses are captured by the pixels, and data captured from the responses can be used separately or together to analyze aspects of the scene. The imaging systems can include circuitry to analyze the image data, and to support modes that select between point-spread responses, selections of the pixels, and algorithms for analyzing image data.

Abstract: A resistance memory includes a resistance memory cell having a resistance memory element and a two-terminal access device in series. The two-terminal access device affects the current-voltage characteristic of the resistance memory cell. The resistance memory additionally includes a circuit to apply across the resistance memory cell a set pulse having a set polarity to set the resistance memory cell to a low-resistance state that is retained after application of the set pulse, a reset pulse having a reset polarity, opposite to the set polarity, to reset the resistance memory cell to a high-resistance state that is retained after application of the reset pulse, and a read pulse of the reset polarity and smaller in magnitude than the reset pulse to determine the resistance state of the resistance memory cell without changing the resistance state of the resistance memory cell.

Abstract: A nonvolatile memory device that uses pulsed control and rest periods to mitigate the formation of defect precursors. A first embodiment uses pulsed bitline control, where the coupling between a memory cell channel and a reference voltage is pulsed when it is desired to change state in the associated memory cell. Each pulse may be chosen to be less than about 20 nanoseconds, while a “rest period” between pulses can be on the order of about a hundred nanoseconds or greater. Because bitline control is used, very short rise times can be enabled, enabling generation of pulse durations of 50 nanoseconds or less. In other embodiments, these methods may also be more generally applied to other conductors (e.g., wordline or substrate well, for program or erase operations); segmented wordlines or bitlines may also be used, to minimize RC loading and enable sufficiently short rise times to make pulses robust.

Abstract: A resistance memory includes a resistance memory cell having a resistance memory element and a two-terminal access device in series. The two-terminal access device affects the current-voltage characteristic of the resistance memory cell. The resistance memory additionally includes a circuit to apply across the resistance memory cell a set pulse having a set polarity to set the resistance memory cell to a low-resistance state that is retained after application of the set pulse, a reset pulse having a reset polarity, opposite to the set polarity, to reset the resistance memory cell to a high-resistance state that is retained after application of the reset pulse, and a read pulse of the reset polarity and smaller in magnitude than the reset pulse to determine the resistance state of the resistance memory cell without changing the resistance state of the resistance memory cell.