Patents by Inventor Mark Daniel Bitner
Mark Daniel Bitner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9293361Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.Type: GrantFiled: July 3, 2014Date of Patent: March 22, 2016Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Dingjun Wu, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Eugene Joseph Karwacki, Aaron Scott Lukas
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Publication number: 20140363950Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.Type: ApplicationFiled: July 3, 2014Publication date: December 11, 2014Inventors: Raymond Nicholas Vrtis, Dingjun Wu, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Eugene Joseph Karwacki, JR., Aaron Scott Lukas
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Patent number: 8846522Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.Type: GrantFiled: February 14, 2013Date of Patent: September 30, 2014Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Dingjun Wu, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Eugene Joseph Karwacki, Jr., Aaron Scott Lukas
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Patent number: 8399349Abstract: The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removale of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.Type: GrantFiled: March 29, 2007Date of Patent: March 19, 2013Assignee: Air Products and Chemicals, Inc.Inventors: Raymond Nicholas Vrtis, Dingjun Wu, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Eugene Joseph Karwacki, Jr., Aaron Scott Lukas
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Patent number: 8137764Abstract: A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the present invention, the OSG film is deposited from a mixture comprising a first silicon-containing precursor that comprises from 3 to 4 Si—O bonds per Si atom, from 0 to 1 of bonds selected from the group consisting of Si—H, Si—Br, and Si—Cl bonds per Si atom and no Si—C bonds and a second silicon-containing precursor that comprises at least one Si—C bond per Si atom. In another embodiment of the present invention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containing precursor. In either embodiment, the mixture may further contain a porogen precursor to provide a porous OSG film.Type: GrantFiled: May 11, 2004Date of Patent: March 20, 2012Assignee: Air Products and Chemicals, Inc.Inventors: Jean Louise Vincent, Mark Leonard O'Neill, Raymond Nicholas Vrtis, Aaron Scott Lukas, Brian Keith Peterson, Mark Daniel Bitner
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Patent number: 7932188Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.Type: GrantFiled: October 31, 2008Date of Patent: April 26, 2011Assignee: Air Products and Chemicals, Inc.Inventors: Aaron Scott Lukas, Mark Leonard O'Neill, Jean Louise Vincent, Raymond Nicholas Vrtis, Mark Daniel Bitner, Eugene Joseph Karwacki, Jr.
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Publication number: 20090054674Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.Type: ApplicationFiled: October 31, 2008Publication date: February 26, 2009Applicant: Air Products and Chemicals, Inc.Inventors: Aaron Scott Lukas, Mark Leonard O'Neill, Jean Louise Vincent, Raymond Nicholas Vrtis, Mark Daniel Bitner, Eugene Joseph Karwacki, JR.
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Patent number: 7470454Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming material within a composite film thereby forming a porous film. The pore-forming material may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.Type: GrantFiled: July 21, 2003Date of Patent: December 30, 2008Assignee: Air Products and Chemicals, Inc.Inventors: Aaron Scott Lukas, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Raymond Nicholas Vrtis, Eugene Joseph Karwacki, Jr.
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Patent number: 7468290Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.Type: GrantFiled: July 21, 2003Date of Patent: December 23, 2008Assignee: Air Products and Chemicals, Inc.Inventors: Aaron Scott Lukas, Mark Leonard O'Neill, Jean Louise Vincent, Raymond Nicholas Vrtis, Mark Daniel Bitner, Eugene Joseph Karwacki, Jr.
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Patent number: 7404990Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming phase within a multiphasic film thereby forming a porous film. The pore-forming phase may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.Type: GrantFiled: November 14, 2002Date of Patent: July 29, 2008Assignee: Air Products and Chemicals, Inc.Inventors: Aaron Scott Lukas, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Raymond Nicholas Vrtis, Eugene Joseph Karwacki, Jr.
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Patent number: 7098149Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.Type: GrantFiled: March 4, 2003Date of Patent: August 29, 2006Assignee: Air Products and Chemicals, Inc.Inventors: Aaron Scott Lukas, Mark Leonard O'Neill, Jean Louise Vincent, Raymond Nicholas Vrtis, Mark Daniel Bitner, Eugene Joseph Karwacki, Jr.
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Patent number: 7074489Abstract: Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic % y is from 10 to 50 atomic %, x is from 1 to 30 atomic %, z is from 0.1 to 15 atomic %, and x/z is optionally greater than 0.25, wherein substantially none of the fluorine is bonded to the carbon. In one embodiment there is provided a CVD method that includes: providing a substrate within a vacuum chamber; introducing into the vacuum chamber gaseous reagents including a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from an organosilane and an organosiloxane; and applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents and to form the film on the substrate.Type: GrantFiled: December 12, 2002Date of Patent: July 11, 2006Assignee: Air Products and Chemicals, Inc.Inventors: Mark Leonard O'Neill, Aaron Scott Lukas, Mark Daniel Bitner, Jean Louise Vincent, Raymond Nicholas Vrtis, Brian K. Peterson
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Publication number: 20040241463Abstract: A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the present invention, the OSG film is deposited from a mixture comprising a first silicon-containing precursor that comprises from 3 to 4 Si—O bonds per Si atom, from 0 to 1 of bonds selected from the group consisting of Si—H, Si—Br, and Si—Cl bonds per Si atom and no Si—C bonds and a second silicon-containing precursor that comprises at least one Si—C bond per Si atom. In another embodiment of the present invention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containing precursor. In either embodiment, the mixture may further contain a porogen precursor to provide a porous OSG film.Type: ApplicationFiled: May 11, 2004Publication date: December 2, 2004Inventors: Jean Louise Vincent, Mark Leonard O'Neill, Raymond Nicholas Vrtis, Aaron Scott Lukas, Brian Keith Peterson, Mark Daniel Bitner
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Publication number: 20040197474Abstract: Organosilica glass and organic polymeric films useful for electronic devices and methods for making same are disclosed herein. In one embodiment of the present invention, there is provided a method for enhancing the chemical vapor deposition of a film comprising an organic species comprising: providing a substrate within a reaction chamber; introducing into the chamber gaseous chemical reagents comprising an organic precursor having carbon and hydrogen bonds contained therein and a rate enhancer wherein the rate enhancer is at least one member selected from the group consisting of an oxygen-containing compound; a peroxide compound having the formula R1OOR2; a peracid compound having the formula R3C(O)OC(O)R4; a fluorine-containing compound; and a heavy inert gas; and applying energy to the chemical reagents in the reaction chamber sufficient to induce the reaction of the reagents and deposit the film upon at least a portion of the substrate.Type: ApplicationFiled: April 1, 2003Publication date: October 7, 2004Inventors: Raymond Nicholas Vrtis, Aaron Scott Lukas, Mark Leonard O'Neill, Jean Louise Vincent, Mark Daniel Bitner, Eugene Joseph Karwacki, Brian Keith Peterson
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Publication number: 20040175957Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.Type: ApplicationFiled: March 4, 2003Publication date: September 9, 2004Inventors: Aaron Scott Lukas, Mark Leonard O'Neill, Jean Louise Vincent, Raymond Nicholas Vrtis, Mark Daniel Bitner, Eugene Joseph Karwacki
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Publication number: 20040175501Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.Type: ApplicationFiled: July 21, 2003Publication date: September 9, 2004Inventors: Aaron Scott Lukas, Mark Leonard O'Neill, Jean Louise Vincent, Raymond Nicholas Vrtis, Mark Daniel Bitner, Eugene Joseph Karwacki
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Publication number: 20040096672Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming phase within a multiphasic film thereby forming a porous film. The pore-forming phase may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.Type: ApplicationFiled: November 14, 2002Publication date: May 20, 2004Inventors: Aaron Scott Lukas, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Raymond Nicholas Vrtis, Eugene Joseph Karwacki
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Publication number: 20040096593Abstract: Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming material within a composite film thereby forming a porous film. The pore-forming material may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.Type: ApplicationFiled: July 21, 2003Publication date: May 20, 2004Inventors: Aaron Scott Lukas, Mark Leonard O'Neill, Mark Daniel Bitner, Jean Louise Vincent, Raymond Nicholas Vrtis, Eugene Joseph Karwacki
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Publication number: 20030162034Abstract: Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic % y is from 10 to 50 atomic %, x is from 1 to 30 atomic %, z is from 0.1 to 15 atomic %, and x/z is optionally greater than 0.25, wherein substantially none of the fluorine is bonded to the carbon. In one embodiment there is provided a CVD method that includes: providing a substrate within a vacuum chamber; introducing into the vacuum chamber gaseous reagents including a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from an organosilane and an organosiloxane; and applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents and to form the film on the substrate.Type: ApplicationFiled: December 12, 2002Publication date: August 28, 2003Inventors: Mark Leonard O'Neill, Aaron Scott Lukas, Mark Daniel Bitner, Jean Louise Vincent, Raymond Nicholas Vrtis, Brian K. Peterson