Abstract: A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.

Abstract: A system and method are provided for reducing dynamic EVM of an integrated circuit power amplifier (PA) used for RF communication. In a multistage PA, the largest amplification stage is biased with a high amplitude current pulse upon receipt of a Tx enable, before receipt of the RF signal data burst. The high amplitude current pulse causes a large portion of the total ICQ budget of the multistage PA to pass through the largest amplification stage causing the entire integrated circuit to rapidly approach steady-state operating conditions. A smoothing bias current is applied to the largest amplification stage after the pulse decays to compensate for transient bias current levels while standard bias circuitry is still approaching steady-state temperature.

Abstract: A system and method are provided for reducing dynamic EVM of an integrated circuit power amplifier (PA) used for RF communication. In a multistage PA, the largest amplification stage is biased with a high amplitude current pulse upon receipt of a Tx enable, before receipt of the RF signal data burst. The high amplitude current pulse causes a large portion of the total ICQ budget of the multistage PA to pass through the largest amplification stage causing the entire integrated circuit to rapidly approach steady-state operating conditions. A smoothing bias current is applied to the largest amplification stage after the pulse decays to compensate for transient bias current levels while standard bias circuitry is still approaching steady-state temperature.

Abstract: A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.

Abstract: A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.

Abstract: A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.

Abstract: An exercise device for exercising the muscles of the human body generally includes a tension cable having a distal end and a proximal end, a harness disposed at the distal end of the tension cable, and a body support, wherein the tension cable is slidably disposed within an opening in the body support, the opening extending from a distal end of the body support to a proximal end of the body support. The device may also include an anchor at the proximal end of the tension cable. Further, the exercise device may include an adjustment member removably affixed to the tension cable in a position relative to the body support.

Abstract: A system and method are provided for reducing dynamic EVM of an integrated circuit power amplifier (PA) used for RF communication. In a multistage PA, the largest amplification stage is biased with a high amplitude current pulse upon receipt of a Tx enable, before receipt of the RF signal data burst. The high amplitude current pulse causes a large portion of the total ICQ budget of the multistage PA to pass through the largest amplification stage causing the entire integrated circuit to rapidly approach steady-state operating conditions. A smoothing bias current is applied to the largest amplification stage after the pulse decays to compensate for transient bias current levels while standard bias circuitry is still approaching steady-state temperature.

Abstract: An integrated circuit is disclosed having through silicon vias spaced apart one from another and conductors, each coupled to one or more of the through silicon vias, the conductors in aggregate in use forming a segmented conductive plane maintained at a same potential and forming an electromagnetic shield.

Abstract: A novel method and apparatus is disclosed for reducing power dissipation of RF power amplifiers when a reduced output power level is required. The mechanism has the specific purpose of optimizing the collector terminal voltage on portions of the amplifier's RF chain for maintaining linearity while minimizing power consumption. The apparatus permits a smaller DC to DC converter to be used than in prior art, such that it is implemented in the same semiconductor die or module. Furthermore, the invention eliminates the amplification and phase continuity issues that arise from switched state power amplifiers and envelope-following approaches.

Abstract: A power amplifier (PA) circuit is disclosed that comprises a PA output stage having a first amplifying portion having a first gain portion and disposed in parallel with a second amplifying portion having a second gain portion, the PA output stage having an output stage gain, an input port for receiving of a RF input signal. A second RF power detector is provided for detecting a signal power of the RF input signal and for providing a second detected signal. An at least a biasing circuit is provided for biasing the first amplifying portion and the second amplifying portion in dependence upon the second detected signal for amplifying the RF input signal such that for the output stage gain the ratio between the first gain portion and the second gain portion varies in dependence upon the second detected signal.

Abstract: A novel method and apparatus is disclosed for reducing power dissipation of RF power amplifiers when a reduced output power level is required. The mechanism has the specific purpose of optimizing the collector terminal voltage on portions of the amplifier's RF chain for maintaining linearity while minimizing power consumption. The apparatus permits a smaller DC to DC converter to be used than in prior art, such that it is implemented in the same semiconductor die or module. Furthermore, the invention eliminates the amplification and phase continuity issues that arise from switched state power amplifiers and envelope-following approaches.

Abstract: A power amplifier (PA) circuit is disclosed that comprises a PA output stage having a first amplifying portion having a first gain portion and disposed in parallel with a second amplifying portion having a second gain portion, the PA output stage having an output stage gain, an input port for receiving of a RF input signal. A second RF power detector is provided for detecting a signal power of the RF input signal and for providing a second detected signal. An at least a biasing circuit is provided for biasing the first amplifying portion and the second amplifying portion in dependence upon the second detected signal for amplifying the RF input signal such that for the output stage gain the ratio between the first gain portion and the second gain portion varies in dependence upon the second detected signal.

Abstract: Prior art architectures of power amplifiers employ a substantial die area, and utilize multiple integrated circuit technologies with a net higher manufacturing cost and large associated packaging area. A new scheme is presented wherein several sense and control signals are used to provide fine and gross control over the key figures of merit associated with integrated semiconductor power amplifiers. How and where these sense and control signals are used is crucial to achieving the most manufacturable and most economic integrated amplifier. In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three-stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided.

Abstract: Prior art architectures of power amplifiers employ a substantial die area, and utilize multiple integrated circuit technologies with a net higher manufacturing cost and large associated packaging area. A new scheme is presented wherein several sense and control signals are used to provide fine and gross control over the key figures of merit associated with integrated semiconductor power amplifiers. How and where these sense and control signals are used is crucial to achieving the most manufacturable and most economic integrated amplifier. In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three-stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided.

Abstract: Prior art architectures of power amplifiers employ a substantial die area, and utilize multiple integrated circuit technologies with a net higher manufacturing cost and large associated packaging area. A new scheme is presented wherein several sense and control signals are used to provide fine and gross control over the key figures of merit associated with integrated semiconductor power amplifiers. How and where these sense and control signals are used is crucial to achieving the most manufacturable and most economic integrated amplifier. In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three-stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided.

Abstract: Prior art architectures of power amplifiers employ a substantial die area, and utilize multiple integrated circuit technologies with a net higher manufacturing cost and large associated packaging area. A new scheme is presented wherein several sense and control signals are used to provide fine and gross control over the key figures of merit associated with integrated semiconductor power amplifiers. How and where these sense and control signals are used is crucial to achieving the most manufacturable and most economic integrated amplifier. In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three-stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided.

Abstract: Prior art architectures of power amplifiers employ a substantial die area, and utilize multiple integrated circuit technologies with a net higher manufacturing cost and large associated packaging area. A new scheme is presented wherein several sense and control signals are used to provide fine and gross control over the key figures of merit associated with integrated semiconductor power amplifiers. How and where these sense and control signals are used is crucial to achieving the most manufacturable and most economic integrated amplifier. In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three-stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided.

Abstract: Prior art architectures of power amplifiers employ a substantial die area, and utilize multiple integrated circuit technologies with a net higher manufacturing cost and large associated packaging area. A new scheme is presented wherein several sense and control signals are used to provide fine and gross control over the key figures of merit associated with integrated semiconductor power amplifiers. How and where these sense and control signals are used is crucial to achieving the most manufacturable and most economic integrated amplifier. In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three-stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided.