Abstract: Stress-modified device structures, methods of fabricating such stress-modified device structures, and design structures for an integrated circuit. An electrical characteristic of semiconductor devices formed on a common substrate, such as the current gains of bipolar junction transistors, may be altered by modifying stresses in structures indirectly on or over, or otherwise indirectly coupled with, the semiconductor devices. The structures, which may be liners for contacts in a contact level of an interconnect, are physically spaced away from, and not in direct physical contact with, the respective semiconductor devices because at least one additional intervening material or structure is situated between the stress-imparting structures and the stress-modified devices.

Abstract: Stress-modified device structures, methods of fabricating such stress-modified device structures, and design structures for an integrated circuit. An electrical characteristic of semiconductor devices formed on a common substrate, such as the current gains of bipolar junction transistors, may be altered by modifying stresses in structures indirectly on or over, or otherwise indirectly coupled with, the semiconductor devices. The structures, which may be liners for contacts in a contact level of an interconnect, are physically spaced away from, and not in direct physical contact with, the respective semiconductor devices because at least one additional intervening material or structure is situated between the stress-imparting structures and the stress-modified devices.

Abstract: A dedensification and delivery unit for the conversion of an alternative fuel source into fuel, comprising: a dedensification area for separating a densified alternative fuel source into its component parts to form a dedensified alternative fuel source; a compression area for holding the dedensified alternative fuel source; a refining area for further shaping a size of the dedensified alternative fuel source to form a refined alternative fuel source; and a delivery area for delivering the refined alternative fuel source into a burner.

Abstract: A densification system for shredding and densifying specification raw materials for use as an alternative fuel source. The densified specification raw materials formed by the inventive system are readily transportable to a fuel processing site where they may be used to generate energy.

Abstract: A nozzle for controlling the spray pattern and the distribution of particles into a combustion chamber. The nozzle comprises a receiver in communication with a vortex chamber, which in turn is in communication with a discharge hood. The vortex chamber and the discharge hood are designed to reduce the air pressure within the nozzle, and to thereby decrease the velocity at which particles move through the nozzle. The nozzle further comprises a plurality of blades disposed on the vortex chamber which serve to control the spray pattern of the particles. The nozzle further optionally comprises a plurality of deflectors located on the discharge hood which further controls the spray pattern of the particles.

Abstract: A densification system for shredding and densifying specification raw materials for use as an alternative fuel source. The densified specification raw materials formed by the inventive system are readily transportable to a fuel processing site where they may be used to generate energy.

Abstract: A method for conducting business comprising: segregating refuse materials into types, wherein one of the types comprises specification raw materials; processing the specification raw materials into a fuel source; and utilizing the fuel source to create power.

Abstract: A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are formed in the single-crystal Si layer. The STI regions sandwich and define a first single-crystal Si region. Next, silicon-germanium (SiGe) mixture is deposited on top of the structure in a SiGe deposition condition so as to grow (i) a second single-crystal silicon region grows up from the top surface of the first single-crystal silicon region and (ii) first and second polysilicon regions from the top surfaces of the first and second STI regions, respectively. By increasing SiGe deposition temperature and/or lowering precursor flow rate until the resulting yield is within a pre-specified range, a satisfactory SiGe deposition condition can be determined for mass production of the structure.

Abstract: A dedensification and delivery unit for the conversion of an alternative fuel source into fuel, comprising: a dedensification area for separating a densified alternative fuel source into its component parts to form a dedensified alternative fuel source; a compression area for holding the dedensified alternative fuel source; a refining area for further shaping a size of the dedensified alternative fuel source to form a refined alternative fuel source; and a delivery area for delivering the refined alternative fuel source into a burner.

Abstract: A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are formed in the single-crystal Si layer. The STI regions sandwich and define a first single-crystal Si region. Next, silicon-germanium (SiGe) mixture is deposited on top of the structure in a SiGe deposition condition so as to grow (i) a second single-crystal silicon region grows up from the top surface of the first single-crystal silicon region and (ii) first and second polysilicon regions from the top surfaces of the first and second STI regions, respectively. By increasing SiGe deposition temperature and/or lowering precursor flow rate until the resulting yield is within a pre-specified range, a satisfactory SiGe deposition condition can be determined for mass production of the structure.

Abstract: A cover assembly for an air cushion restraint has a smooth cover with a layer of foam connected between the cover and a load bearing insert for covering a housing for an airbag and a gas generator which generates an inflatant for the airbag for deploying the airbag; three cutters are pivotally connected to the insert member to cut an insert cover member from the insert and to pierce the smooth outer cover member during inflation of the airbag so as to form a self-piercing cover assembly which will be cut to form a three sided opening through the cover assembly through which the airbag is deployed; the cutters are actuated by an insert cover member support system which will operate the cutters as the airbag is inflated to cause cutting edges on the cutters to pierce the smooth outer cover member. The cutters are recessed within the cover assembly to avoid incidental contact with the cutting edges prior to deployment.