Abstract: In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.

Abstract: In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.

Abstract: In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.

Abstract: A Schottky diode capable of sustaining a voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer of N-type conductivity is disposed on a semiconductor substrate of N-type conductivity. A guard ring of P-type conductivity extends into the epitaxial layer from its surface. A stacked structure is formed on a portion of the guard ring and a portion of the epitaxial layer. The stacked structure includes a layer of semi-insulating semiconductor material disposed on a layer of dielectric material. A first metal layer is formed on the portion of the epitaxial layer adjacent a first side of the stacked structure and on a first portion of the stacked structure. A second metal layer is formed on the portion of the epitaxial layer adjacent a second side of the stacked structure and on a second portion of the stacked structure.

Abstract: In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic.

Abstract: A Schottky diode capable of sustaining a breakdown voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer disposed on a semiconductor substrate has a thickness of at least about 15 micrometers and an impurity concentration ranging from about 1×1014 atoms per cubic centimeter to about 1×1015 atoms per cubic centimeter. A guard ring extends from about 3 micrometers to about 15 micrometers into the epitaxial layer. A dielectric material is formed over the epitaxial layer and a portion of the dielectric material is removed to expose a portion of the guard ring and a portion of the epitaxial layer within the guard ring. An electrically conductive material is formed over the exposed portion of the epitaxial layer and an electrically conductive material is formed in contact with a bottom surface of the semiconductor substrate.

Abstract: A Schottky diode capable of sustaining a breakdown voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer disposed on a semiconductor substrate has a thickness of at least about 15 micrometers and an impurity concentration ranging from about 1×1014 atoms per cubic centimeter to about 1×1015 atoms per cubic centimeter. A guard ring extends from about 3 micrometers to about 15 micrometers into the epitaxial layer. A dielectric material is formed over the epitaxial layer and a portion of the dielectric material is removed to expose a portion of the guard ring and a portion of the epitaxial layer within the guard ring. An electrically conductive material is formed over the exposed portion of the epitaxial layer and an electrically conductive material is formed in contact with a bottom surface of the semiconductor substrate.

Abstract: A Schottky diode capable of sustaining a voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer of N-type conductivity is disposed on a semiconductor substrate of N-type conductivity. A guard ring of P-type conductivity extends into the epitaxial layer from its surface. A stacked structure is formed on a portion of the guard ring and a portion of the epitaxial layer. The stacked structure includes a layer of semi-insulating semiconductor material disposed on a layer of dielectric material. A first metal layer is formed on the portion of the epitaxial layer adjacent a first side of the stacked structure and on a first portion of the stacked structure. A second metal layer is formed on the portion of the epitaxial layer adjacent a second side of the stacked structure and on a second portion of the stacked structure.