Patents by Inventor Mark E. Law

Mark E. Law has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High electron mobility transistors with improved heat dissipation
    Patent number: 10312358
    Abstract: III-nitride based high electron mobility transistors (HEMTs), such as AlGaN/GaN HEMTs on Silicon substrates, with improved heat dissipation are described herein. A semiconductor device having improved heat dissipation may include a substrate having a top surface and a bottom surface, a nucleation layer on the top surface of the substrate, a transition layer on the nucleation layer, a buffer layer on the transition layer, a barrier layer on the buffer layer, and a metal layer filling a via hole that extends from the bottom surface of the substrate to a bottom surface of the transition layer.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: June 4, 2019
    Assignee: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INCORPORATED
    Inventors: Fan Ren, Stephen John Pearton, Mark E. Law, Ya-Hsi Hwang
  • HIGH ELECTRON MOBILITY TRANSISTORS WITH IMPROVED HEAT DISSIPATION
    Publication number: 20170294528
    Abstract: III-nitride based high electron mobility transistors (HEMTs), such as AlGaN/GaN HEMTs on Silicon substrates, with improved heat dissipation are described herein. A semiconductor device having improved heat dissipation may include a substrate having a top surface and a bottom surface, a nucleation layer on the top surface of the substrate, a transition layer on the nucleation layer, a buffer layer on the transition layer, a barrier layer on the buffer layer, and a metal layer filling a via hole that extends from the bottom surface of the substrate to a bottom surface of the transition layer.
    Type: Application
    Filed: October 2, 2015
    Publication date: October 12, 2017
    Inventors: Fan Ren, Stephen John Pearton, Mark E. Law, Ya-Hsi Hwang