Abstract: An optical routing device is described that comprises a semiconductor substrate (52) having at least one optical input (4), a plurality of optical outputs (6,8) and an array of MEMS moveable reflective elements (58;102). The array of moveable reflective elements (58;102) are configurable such that light can be selectively routed from any one optical input (4) to any one of two or more of said plurality of optical outputs (6,8). Light selectively routed from any one optical input to any one of two or more of said plurality of optical outputs (6,8) is guided within a hollow core waveguide (54). In one embodiment, a cross-connect optical matrix switch is described.

Abstract: An optical amplifier is described that comprises at least two sections of amplifying optical fibre and pumping means for optically pumping the amplifying optical fibre. Optical fibre support means, for example a channel or channels in a substrate, are also provided to hold the two or more sections of amplifying optical fibre substantially straight during use. The optical fibre support means also includes a means for coupling light between the at least two sections of amplifying optical fibre. The at least one amplifying optical fibre may comprise an Erbium doped core to provide an erbium doped fibre amplifier (EDFA).

Abstract: A method of micro-machining comprising providing a primary region of at least a first material which contacts a second material at at least one end portion thereof, the method comprising providing an infill material on to the second material, patterning and etching said infill material to form a hole through the infill material to the second material, depositing the first material on to said infill material so that the at least one portion of the first material contacts the second material through the hole. The method can be used to provide a track bridging suspended portions of micro-machined structures. Also a method of narrowing and sealing top portions of channels cut into a wafer is disclosed.

Abstract: A method of fabricating a micro-mechanical sensor (101) comprising the steps for forming an insulating layer (6) onto the surface of a first wafer (4) bonding a second wafer (2) to the insulating layer (6), patterning and subsequently etching either the first (4) or second wafer (6) such that channels (18,20) are created in either the first (2) or second (4) wafer terminating adjacent the insulating layer (6) and etching the insulating layer (6) to remove portions of the insulating layer (6) below the etched wafer such that those portions of the etched wafer below a predetermined cross section, suspended portions (22), become substantially freely suspended above the un-etched wafer. This method uses Silicon on Insulator technology. Also disclosed is a micro-mechanical gyroscope structure (101) allowing an anisotropic silicon to be used to fabricate a sensor functioning as if fabricated from isotropic silicon.

Abstract: A method of fabricating a micro-mechanical sensor (101) comprising the steps for forming an insulating layer (6) onto the surface of a first wafer (4) bonding a second wafer (2) to the insulating layer (6), patterning and subsequently etching either the first (4) or second wafer (6) such that channels (18,20) are created in either the first (2) or second (4) wafer terminating adjacent the insulating layer (6) and etching the insulating layer (6) to remove portions of the insulating layer (6) below the etched wafer such that those portions of the etched wafer below a predetermined cross section, suspended portions (22), become substantially freely suspended above the un-etched wafer. This method uses Silicon on Insulator technology. Also disclosed is a micro-mechanical gyroscope structure (101) allowing an anisotropic silicon to be used to fabricate a sensor functioning as if fabricated from isotropic silicon.

Abstract: A method of fabricating a micro-mechanical sensor (101) comprising the steps for forming an insulating layer (6) onto the surface of a first wafer (4) bonding a second wafer (2) to the insulating layer (6), patterning and subsequently etching either the first (4) or second wafer (6) such that channels (18, 20) are created in either the first (2) or second (4) wafer terminating adjacent the insulating layer (6) and etching the insulating layer (6) to remove portions of the insulating layer (6) below the etched wafer such that those portions of the etched wafer below a predetermined cross section, suspended portions (22), become substantially freely suspended above the un-etched wafer. This method uses Silicon on Insulator technology. Also disclosed is a micro-mechanical gyroscope structure (101) allowing an anisotropic silicon to be used to fabricate a sensor functioning as if fabricated from isotropic silicon.