Abstract: Described is an apparatus which comprises: a first memory unit having an input and an output, wherein the first memory unit operates on a first power supply which is operable to be turned off; a second memory unit having an input coupled to the output of the first memory unit, and an output, wherein the second memory unit operates on a second power supply which is always on; and a control logic coupled to the first and second memory units, the control logic to provide one or more control signals to each of the first and second memory units.

Abstract: Described is an apparatus which comprises: a first memory unit having an input and an output, wherein the first memory unit operates on a first power supply which is operable to be turned off; a second memory unit having an input coupled to the output of the first memory unit, and an output, wherein the second memory unit operates on a second power supply which is always on; and a control logic coupled to the first and second memory units, the control logic to provide one or more control signals to each of the first and second memory units.

Abstract: An apparatus may include a storage circuit that may have a first terminal and a second terminal and may have two cross-coupled inverters. The apparatus may include a feedback circuit coupled to the first terminal. The feedback circuit may include electronic logic elements to determine if the storage circuit is in a metastable state. The feedback circuit may couple at least one of the first and second terminals to one of a voltage reference and a voltage source if determined that the storage circuit is in a metastable state.

Abstract: An apparatus may include a storage circuit that may have a first terminal and a second terminal and may have two cross-coupled inverters. The apparatus may include a feedback circuit coupled to the first terminal The feedback circuit may include electronic logic elements to determine if the storage circuit is in a metastable state. The feedback circuit may couple at least one of the first and second terminals to one of a voltage reference and a voltage source if determined that the storage circuit is in a metastable state.

Abstract: Disclosed herein are synchronization latch solutions.

Abstract: Disclosed herein are synchronization latch solutions.

Abstract: Method and apparatus for an ultra-drowsy circuit for use in lower power operational modes are described.

Abstract: A scan enabled storage device includes two storage elements and two input circuits. A data input circuit accepts a data signal, a clock signal, and a scan enable signal to inhibit the operation of the clock signal. A scan data input circuit accepts a scan data signal and a scan clock signal.

Abstract: Method and apparatus for an ultra-drowsy circuit for use in lower power operational modes are described.

Abstract: Briefly, in accordance with one embodiment of the invention, an integrated circuit has a voltage generator that selectively increases the voltage potential on the channel region of a transistor relative to the source region of the transistor. The voltage potential may be provided to a diffusion region in the well regions with transistors.

Abstract: An edge-triggered flip flop includes a clocking portion having first and second transistor stacks that are coupled to first and second storage nodes of a memory element, respectively. In at least one embodiment, a clock signal is applied to an input of at least one transistor in each stack and a delayed and possibly inverted version of the clock signal is applied to an input of at least one other transistor in each stack to clock new data into the memory element.

Abstract: Briefly, in accordance with one embodiment of the invention, an integrated circuit has a voltage generator that selectively increases the voltage potential on the channel region of a transistor relative to the source region of the transistor. The voltage potential may be provided to a diffusion region in the well regions with transistors.

Abstract: Briefly, in accordance with one embodiment of the invention, an integrated circuit has a voltage generator that selectively increases the voltage potential on the channel region of a transistor relative to the source region of the transistor. The voltage potential may be provided to a diffusion region in the well regions with transistors.

Abstract: An improved storage circuit that allows multiple bits to be encoded and stored using a single storage element. The encoded information is defined by a coupling made between a transistor as the storage element and any one of several bit lines associated with the transistor. When the coupled bit line is discharged in response to a wordline signal, the stored information can be captured by an encoder. The circuit is particularly useful for efficiently storing information in a gate array integrated circuit, because the gate array has more space around each transistor to add bit lines than a conventional, densely packed, ROM.