Patents by Inventor Mark Eskew

Mark Eskew has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240334692
    Abstract: An integrated circuit comprises a transistor extending into a semiconductor substrate and having a gate structure having major and minor axes parallel to a surface of the semiconductor substrate, and a UV-opaque sheet structure vertically spaced apart from a top surface of the gate structure by a first distance and including an opening, the opening having first and second sides about parallel to the major axis, at least one of the first and second sides laterally spaced apart from a corresponding side of the gate structure by a second distance that is less than or equal to the first distance.
    Type: Application
    Filed: March 31, 2023
    Publication date: October 3, 2024
    Inventors: Zeng Zhang, Jack Qian, Keith Jarreau, Tamer San, Mark Eskew
  • Patent number: 10192998
    Abstract: An atmometer system based on an analog floating-gate structure and circuit. The floating-gate circuit includes a floating-gate electrode that serves as a gate electrode for a transistor and a plate of a storage capacitor. A conductor element exposed at the surface of the integrated circuit is electrically connected to the floating-gate electrode; reference conductor elements biased to ground are also at the surface of the integrated circuit. In operation, the transistor is biased and moisture is dispensed at the surface. The drain current of the transistor changes as the floating-gate electrode discharges via the surface conductors and a conduction path presented by the moisture. The elapsed time until the drain current stabilizes indicates the evaporation rate.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: January 29, 2019
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Allan T. Mitchell, Mark Eskew
  • Patent number: 10088311
    Abstract: An analog floating-gate (AFG) inclinometer where a plurality of AFG sensors are provided to detect the presence of a discharge caused by settling of a conductive liquid droplet contained in a sealed microchannel under gravity. A plurality of sensor port electrodes associated with the AFG sensors are placed along the length of a curved sealed microchannel of the inclinometer at specific positions calibrated to corresponding angular inclinations. Discharge detected at a specific AFG sensor port during measurement due to the movement of the conductive liquid droplet under gravity is used in determining a surface inclination being measured.
    Type: Grant
    Filed: September 15, 2016
    Date of Patent: October 2, 2018
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventor: Mark Eskew
  • Publication number: 20180130901
    Abstract: An atmometer system based on an analog floating-gate structure and circuit. The floating-gate circuit includes a floating-gate electrode that serves as a gate electrode for a transistor and a plate of a storage capacitor. A conductor element exposed at the surface of the integrated circuit is electrically connected to the floating-gate electrode; reference conductor elements biased to ground are also at the surface of the integrated circuit. In operation, the transistor is biased and moisture is dispensed at the surface. The drain current of the transistor changes as the floating-gate electrode discharges via the surface conductors and a conduction path presented by the moisture. The elapsed time until the drain current stabilizes indicates the evaporation rate.
    Type: Application
    Filed: December 20, 2017
    Publication date: May 10, 2018
    Inventors: Allan T. Mitchell, Mark Eskew
  • Publication number: 20180073874
    Abstract: An analog floating-gate (AFG) inclinometer where a plurality of AFG sensors are provided to detect the presence of a discharge caused by settling of a conductive liquid droplet contained in a sealed microchannel under gravity. A plurality of sensor port electrodes associated with the AFG sensors are placed along the length of a curved sealed microchannel of the inclinometer at specific positions calibrated to corresponding angular inclinations. Discharge detected at a specific AFG sensor port during measurement due to the movement of the conductive liquid droplet under gravity is used in determining a surface inclination being measured.
    Type: Application
    Filed: September 15, 2016
    Publication date: March 15, 2018
    Inventor: Mark Eskew
  • Patent number: 9882065
    Abstract: An atmometer system based on an analog floating-gate structure and circuit. The floating-gate circuit includes a floating-gate electrode that serves as a gate electrode for a transistor and a plate of a storage capacitor. A conductor element exposed at the surface of the integrated circuit is electrically connected to the floating-gate electrode; reference conductor elements biased to ground are also at the surface of the integrated circuit. In operation, the transistor is biased and moisture is dispensed at the surface. The drain current of the transistor changes as the floating-gate electrode discharges via the surface conductors and a conduction path presented by the moisture. The elapsed time until the drain current stabilizes indicates the evaporation rate.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: January 30, 2018
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Allan T. Mitchell, Mark Eskew
  • Publication number: 20150377811
    Abstract: An atmometer system based on an analog floating-gate structure and circuit. The floating-gate circuit includes a floating-gate electrode that serves as a gate electrode for a transistor and a plate of a storage capacitor. A conductor element exposed at the surface of the integrated circuit is electrically connected to the floating-gate electrode; reference conductor elements biased to ground are also at the surface of the integrated circuit. In operation, the transistor is biased and moisture is dispensed at the surface. The drain current of the transistor changes as the floating-gate electrode discharges via the surface conductors and a conduction path presented by the moisture. The elapsed time until the drain current stabilizes indicates the evaporation rate.
    Type: Application
    Filed: June 25, 2015
    Publication date: December 31, 2015
    Inventors: Allan T. Mitchell, Mark Eskew