Abstract: A method of removing at least one particle from a substrate is disclosed comprising polishing a metallized layer over the substrate using a slurry to remove a portion of the metallized layer and polishing the substrate using the slurry to remove a portion of a barrier between the metallized layer and the substrate. The method further includes introducing deionized water onto the substrate and introducing a solution comprising a weak acid selected from the group consisting of acetic acid, citric acid, gluconic acid, glucuronic acid, oxalic acid, and tartaric acid.

Abstract: A composition is described that comprises an abrasive, and a hydrocarbon containing component that is coupled to the abrasive. Such a composition may be included in a slurry that is used to polish a substrate, when forming a semiconductor device. Also described is a method for modifying a surface of an abrasive that comprises coupling a hydrocarbon containing component to the surface of the abrasive.

Abstract: A composition is described that comprises an abrasive, and a hydrocarbon containing component that is coupled to the abrasive. Such a composition may be included in a slurry that is used to polish a substrate, when forming a semiconductor device. Also described is a method for modifying a surface of an abrasive that comprises coupling a hydrocarbon containing component to the surface of the abrasive.

Abstract: A method of converting a hydrophobic surface of a dielectric layer to a hydrophilic surface is described. That method comprises forming on a substrate a dielectric layer that has a hydrophobic surface, then coupling a hydrophilic component to the surface of the dielectric layer. Also described is a method for making a semiconductor device that employs this technique after polishing a conductive layer, which may comprise copper.

Abstract: A method of removing at least one particle from a substrate is disclosed comprising polishing a metallized layer over the substrate using a slurry to remove a portion of the metallized layer and polishing the substrate using the slurry to remove a portion of a barrier between the metallized layer and the substrate. The method further includes introducing deionized water onto the substrate and introducing a solution comprising a weak acid selected from the group consisting of acetic acid, citric acid, gluconic acid, glucuronic acid, oxalic acid, and tartaric acid.

Abstract: A method of converting a hydrophobic surface of a dielectric layer to a hydrophilic surface is described. That method comprises forming on a substrate a dielectric layer that has a hydrophobic surface, then coupling a hydrophilic component to the surface of the dielectric layer. Also described is a method for making a semiconductor device that employs this technique after polishing a conductive layer, which may comprise copper.

Abstract: A method and a composition is disclosed comprising polishing the substrate using a slurry and introducing solution onto a metallized layer that comprises an acid.

Abstract: A method and a composition is disclosed comprising polishing the substrate using a slurry and introducing solution onto a metallized layer that comprises an acid.

Abstract: The electroactive product of the present invention is a metal cyanide film on a substrate, wherein the improvement is the metal cyanide film having a flux throughput capacity greater than 0.54 millicoulombs/second-cm2 as measured by the specific cyclic voltammetry procedure. The improved metal cyanide film generally has a flux throughput capacity greater than that of unimproved metal cyanide film wherein the improved metal cyanide film was deposited at a slow rate. The present invention enjoys the advantages of greater cation equivalent loading capacity, and achieving ion separations using half the amount of electricity as other electrochemical ion separations.