Patents by Inventor Mark F. Heisig

Mark F. Heisig has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High voltage integrated switching devices on a bonded and trenched silicon substrate
    Patent number: 6696707
    Abstract: A high voltage integrated switching device includes at least one high voltage switching circuit, preferably employing DMOS technology and characterized by a breakdown voltage of at least 100 volts, on a dielectrically isolated, bonded and vertically trenched silicon substrate. Multiple high-voltage switching circuits may be located in close proximity on a single substrate without circuit breakdown or shorting during circuit operation. The circuit may further include one or more low- and/or intermediate-voltage circuits employing, for example, CMOS and bipolar technologies on the same silicon substrate and located in close proximity without voltage breakdown during circuit operation.
    Type: Grant
    Filed: April 23, 1999
    Date of Patent: February 24, 2004
    Assignee: CCP. Clare Corporation
    Inventors: Nestore A. Polce, Scotten W. Jones, Mark F. Heisig
  • High voltage integrated switching devices on a bonded and trenched silicon substrate
    Patent number: 6566223
    Abstract: A high voltage integrated switching device includes at least one high voltage switching circuit, preferably employing DMOS technology and characterized by a breakdown voltage of at least 100 volts, on a dielectrically isolated, bonded and vertically trenched silicon substrate. Multiple high-voltage switching circuits may be located in close proximity on a single substrate without circuit breakdown or shorting during circuit operation. The circuit may further include one or more low- and/or intermediate-voltage circuits employing, for example, CMOS and bipolar technologies on the same silicon substrate and located in close proximity without voltage breakdown during circuit operation.
    Type: Grant
    Filed: August 15, 2000
    Date of Patent: May 20, 2003
    Assignee: C. P. Clare Corporation
    Inventors: Nestore A. Polce, Scotten W. Jones, Mark F. Heisig
  • HIGH VOLTAGE INTEGRATED SWITCHING DEVICES ON A BONDED AND TRENCHED SILICON SUBSTRATE
    Publication number: 20020056851
    Abstract: A high voltage integrated switching device includes at least one high voltage switching circuit, preferably employing DMOS technology and characterized by a breakdown voltage of at least 100 volts, on a dielectrically isolated, bonded and vertically trenched silicon substrate. Multiple high-voltage switching circuits may be located in close proximity on a single substrate without circuit breakdown or shorting during circuit operation. The circuit may further include one or more low- and/or intermediate-voltage circuits employing, for example, CMOS and bipolar technologies on the same silicon substrate and located in close proximity without voltage breakdown during circuit operation.
    Type: Application
    Filed: April 23, 1999
    Publication date: May 16, 2002
    Inventors: NESTORE A. POLCE, SCOTTEN W. JONES, MARK F. HEISIG