Abstract: A method of manufacturing a multi-layered structure includes forming first and second layers, patterning the first layer, determining a distribution of material in at least one area of the first layer, and altering the material content of one of the first and second layers in at least one of the first layer area and a corresponding area of the second layer to approximately match the material content of the first layer and second layers.

Abstract: A constraining ring increases the modulus of an interconnect substrate to maintain flatness of the substrate. The constraining ring is made of materials selected to match the coefficient of thermal expansion of the substrate to that of the constraining ring. Circuit components including capacitors and resistors are formed on the constraining ring to provide enhanced electrical properties without adding to the size of the device.

Abstract: A method of minimizing warp and die stress in the production of an electronic assembly includes connecting one surface of a die to a package, and connecting an opposite surface of the die to a lid disposed over a constraining ring that is mounted to the package. The lid has a size, shape and coefficient of thermal expansion (CTE) selected to generate a bending moment that opposes bending moments resulting from connecting the die to the package.

Abstract: A dimensionally stable core for use in high density chip packages is provided. The stable core is a metal core, preferably copper, having clearances formed therein. Dielectric layers are provided concurrently on top and bottom surfaces of the metal core. Metal cap layers are provided concurrently on top surfaces of the dielectric layers. Blind or through vias are then drilled through the metal cap layers and extend into the dielectric layers and clearances formed in the metal core. If an isolated metal core is provided then the vias do not extend through the clearances in the copper core. The stable core reduces material movement of the substrate and achieves uniform shrinkage from substrate to substrate during lamination processing of the chip packages. This allows each substrate to perform the same. Additionally, a plurality of chip packages having the dimensionally stable core can be bonded together to obtain a high density chip package.

Abstract: A lid for a chip/package system includes a body sized to fit over an integrated circuit chip and being connectable to a package. The body has at least two regions exhibiting different coefficients of thermal expansion, with one CTE matching that of the chip and the other matching that of the package.

Abstract: A method of controlling warp of electronic assemblies includes mounting a first component to one side of a substrate, the first component having a different coefficient of thermal expansion (CTE) than the substrate and thereby tending to generate bending moments that distort the shape of the first component, and mounting a second component to an opposite side of the substrate and opposite the first component. The second component has a CTE that approximately matches that of the first component, thereby tending to generate bending moments that offset the distorting bending moments.

Abstract: In accordance with the present invention, an MCM substrate product is manufactured in an additive process using multiple layers of a fluoropolymer composite material and copper. The copper layers are plated, and the fluoropolymer composite layers are laminated. A seeding process promotes reliable bonding between the fluoropolymer composite material and the plated copper. The use of the filled fluoropolymeric composite eliminates the need for a barrier metal layer between the insulation and the conductors. The MCM substrate device of the present invention may have multiple metal layers and multiple dielectric layers; four or five, or more, of each in a single structure would be easily achieved and is typical. The structure would include lead lines in separate mutually orthogonal planes (sometimes referred to as "x" and "y" lead lines) sandwiched between ground and power voltage planes of copper.