Abstract: The halide chemical vapor deposition process deposits a chemical compound comprised of at least two different elements. The method employs a first process gas which includes a halogenated compound of a first one of the at least two different elements, and a second process gas which includes hydrogen and a second one of at least two different elements. The process gases are maintained in separation until they are contacted in a deposition chamber proximate a substrate. The gases, which are generally preheated to a temperature of less than their thermal decomposition temperatures, are contacted in a deposition region proximate the substrate, and react to generate a deposition species and a hydrogen halide which is removed. Also disclosed is an apparatus for practicing the invention.