Patents by Inventor Mark Gelak

Mark Gelak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon-based explosive devices and methods of manufacture
    Patent number: 8425704
    Abstract: Silicon-based explosive devices and methods of manufacture are provided. In this regard, a representative method involves: providing a doped silicon substrate; depositing undoped silicon on a first side of the substrate; and infusing an oxidizer into an area bounded at least in part by the undoped silicon; wherein the undoped silicon limits an exothermic reaction of the doped silicon to the bounded area. Another representative method involves: providing a doped silicon substrate; depositing a masking layer of low-pressure chemical vapor deposited (LPCVD) Silicon nitride to the first side of the substrate; patterning the nitride mask and etching the porous silicon, and infusing oxidizer into an area bounded by the LPCVD nitride; wherein the silicon nitride limits an exothermic reaction of the doped silicon to the bounded area.
    Type: Grant
    Filed: August 4, 2009
    Date of Patent: April 23, 2013
    Assignee: The United States of America as Represented by the Secretary of the Army
    Inventors: Luke J. Currano, Ronald G. Polcawich, Wayne Churaman, Mark Gelak
  • SILICON-BASED EXPLOSIVE DEVICES AND METHODS OF MANUFACTURE
    Publication number: 20120174808
    Abstract: Silicon-based explosive devices and methods of manufacture are provided. In this regard, a representative method involves: providing a doped silicon substrate; depositing undoped silicon on a first side of the substrate; and infusing an oxidizer into an area bounded at least in part by the undoped silicon; wherein the undoped silicon limits an exothermic reaction of the doped silicon to the bounded area. Another representative method involves: providing a doped silicon substrate; depositing a masking layer of low-pressure chemical vapor deposited (LPCVD) Silicon nitride to the first side of the substrate; patterning the nitride mask and etching the porous silicon, and infusing oxidizer into an area bounded by the LPCVD nitride; wherein the silicon nitride limits an exothermic reaction of the doped silicon to the bounded area.
    Type: Application
    Filed: August 4, 2009
    Publication date: July 12, 2012
    Inventors: Luke J. Currano, Ronald G. Polcawich, Wayne Churaman, Mark Gelak