Abstract: Described herein is technology for, among other things, a multi-purpose sanding or filing apparatus. The apparatus includes a motor, a plurality of drive mechanisms in mechanical communication with the motor, and a plurality of drums, where each of the drums has an axis passing therethrough, the drums are coupled with respective drive mechanisms, and the drive mechanisms are operable to rotate the drums about their respective axes.

Abstract: An embodiment of the present invention is directed to a multi-purpose sanding system. The sanding system includes a motor, a drive mechanism in mechanical communication with the motor, and a plurality of interchangeable sanding devices. Each of the interchangeable sanding devices is interchangeably coupleable with the drive mechanism.

Abstract: This document discloses devices fabricated on a semiconductor substrate and methods of fabricating the same. The devices can be memory cells having a tunnel window that is defined by dry-etching oxide to expose the semiconductor substrate and growing a tunnel oxide layer on the exposed semiconductor substrate. The semiconductor substrate can be decontaminated and/or repaired by exposing the semiconductor substrate to an optical irradiated energy source having a predefined energy that is sufficient to break molecular bonds of the contaminants and exposing the semiconductor substrate to a temperature that is sufficient to recrystallize the crystal lattice of the substrate.

Abstract: Methods and materials for silicon on insulator wafer production in which the doping concentration in a handle wafer is sufficiently high to inhibit dopant from diffusing from the bond wafer during or after bonding to the handle wafer.

Abstract: Disclosed herein are devices, methods and systems for implementing gettering layers. Devices including gettering layers can be implemented such that a gettering layer doped with carbon, boron, fluorine or any other appropriate impurity is formed on a semiconductor substrate, a device layer is formed on the gettering layer, and a device region is formed in the device layer having a depth that maintains a distance in the device layer between the gettering layer and the device region.

Abstract: A method of forming an electrical contact between an active semiconductor device layer and a base substrate. The method includes forming a first masking layer over an uppermost surface of the active semiconductor layer, patterning a window in the masking layer, and etching an opening down to the base substrate within an area defined by the window. The opening is filled with a semiconductor contact material while simultaneously adding a dopant to the semiconductor contact material thereby forming an electrical contact between the active semiconductor device layer and the base substrate.

Abstract: A method of cleaning and oxidizing a substrate, for example, a silicon wafer, and forming a film (e.g., silicon dioxide) in-situ by placing the substrate in a chamber, pumping-down the chamber to a predetermined subatmospheric pressure, and elevating a temperature of the substrate within the chamber. Cleaning begins by releasing hydrogen gas into the chamber for a time period of, for example, 5 seconds to 300 seconds. The hydrogen gas, along with any contaminants, are then evacuated from the chamber. Prior to removing the substrate, an oxidant, such as oxygen (O2), steam or another process (e.g., an in-situ steam generation (ISSG) process) is then released into the chamber and the film is formed on a surface of the substrate.

Abstract: Methods and materials for silicon on insulator wafer production in which the doping concentration in a handle wafer is sufficiently high to inhibit dopant from diffusing from the bond wafer during or after bonding to the handle wafer.

Abstract: Actuation device positioning systems and associated methods, including aircraft spoiler droop systems are generally disclosed herein. One aspect of the invention is directed toward a positioning system that includes an eccentric cam and a drive mechanism coupled to the eccentric cam to rotate the eccentric cam between a first cam position and a second cam position. The system can further include an actuation device having an anchor portion and a movable portion that is movable relative to the anchor portion, the anchor portion operatively coupled to the eccentric cam. The eccentric cam can be positioned to move the anchor portion to a first anchor position when the eccentric cam is rotated to the first cam position and to move the anchor portion to a second anchor position when the eccentric cam is rotated to the second cam position.

Abstract: An optical dispersion system comprising a light source where light is directed to be illuminated from the system, a prismatic magnifier to expand a coverage area of the light illuminated from the light source and to deflect and magnify the light, and a removable front panel having a cutout area through which the light source illuminates.

Abstract: Systems and methods for providing differential motion to wing high lift devices are disclosed. A system in accordance with one embodiment of the invention includes a wing having a leading edge, a trailing edge, a first deployable lift device with a first spanwise location, and a second deployable lift device with a second spanwise location different than the first. The wing system can further include a drive system having a drive link operatively coupleable to both the first and second deployable lift devices, and a control system operatively coupled to the drive system. The control system can have a first configuration for which the drive link is operatively coupled to the first and second deployable lift devices, and activation of at least a portion of the drive link moves the first and second deployable lift devices together.

Abstract: A self-contained sanitary system includes a stand alone bench carrying a toilet with a flush tank for storing a source of flush water. The system further includes a holding tank. The holding tank is removably associated with the toilet and includes a pair of wheels and a retractable handle.

Abstract: An optical dispersion system comprising a light source where light is directed to be illuminated from the system, a prismatic magnifier to expand a coverage area of the light illuminated from the light source and to deflect and magnify the light, and a removable front panel having a cutout area through which the light source illuminates.

Abstract: A method for fabricating a silicon dioxide/silicon nitride/silicon dioxide (ONO) stacked composite having a thin silicon nitride layer for providing a high capacitance interpoly dielectric structure. In the formation of the ONO composite, a bottom silicon dioxide layer is formed on a substrate such as polysilicon. A silicon nitride layer is formed on the silicon dioxide layer and is thinned by oxidation. The oxidation of the silicon nitride film consumes some of the silicon nitride by a reaction that produces a silicon dioxide layer. This silicon dioxide layer is removed with a hydrofluoric acid dilution. The silicon nitride layer is again thinned by re-oxidization as a top silicon dioxide layer is formed on the silicon nitride layer. A second layer of polysilicon is deposited over the silicon nitride, forming an interpoly dielectric.

Abstract: The present invention provides methods and apparatus for creating customized messages for printing on a transaction slip. A user interface is provided for creating a customized message for printing on the slip. At least one template for the message is provided. The template(s) corresponds to a layout of the transaction slip. A selection tool is enables the selection of a graphic from a menu of graphics files and inputting the graphic, if selected, into a graphic section of the at least one template. A header section of the at least one template is adapted to accept header text input for a message header. A text section of the at least one template is adapted to accept message text input for a message body. Each graphic file, header text and message text that has been input into respective sections of the at least one template are combined into a printable message.

Abstract: A method for fabricating a silicon dioxide/silicon nitride/silicon dioxide (ONO) stacked composite having a thin silicon nitride layer for providing a high capacitance interpoly dielectric structure. In the formation of the ONO composite, a bottom silicon dioxide layer is formed on a substrate such as polysilicon. A silicon nitride layer is formed on the silicon dioxide layer and is thinned by oxidation. The oxidation of the silicon nitride film consumes some of the silicon nitride by a reaction that produces a silicon dioxide layer. This silicon dioxide layer is removed with a hydrofluoric acid dilution. The silicon nitride layer is again thinned by re-oxidization as a top silicon dioxide layer is formed on the silicon nitride layer. A second layer of polysilicon is deposited over the silicon nitride, forming an interpoly dielectric.

Abstract: A method for fabricating a silicon dioxide/silicon nitride/silicon dioxide (ONO) stacked composite having a thin silicon nitride layer for providing a high capacitance interpoly dielectric structure. In the formation of the ONO composite, a bottom silicon dioxide layer is formed on a substrate such as polysilicon. A silicon nitride layer is formed on the silicon dioxide-layer and is thinned by oxidation. The oxidation of the silicon nitride film consumes some of the silicon nitride by a reaction that produces a temporary silicon dioxide layer. The temporary silicon dioxide layer is removed with a hydrofluoric acid dilution. The silicon nitride layer is again thinned by re-oxidization as a top silicon dioxide layer is formed on the silicon nitride layer. A layer of polysilicon is deposited over the silicon nitride, forming an interpoly dielectric.

Abstract: A method for fabricating a silicon dioxide/silicon nitride/silicon dioxide (ONO) stacked composite having a thin silicon nitride layer for providing a high capacitance interpoly dielectric structure. In the formation of the ONO composite, a bottom silicon dioxide layer is formed on a substrate such as polysilicon. A silicon nitride layer is formed on the silicon dioxide layer and is thinned by oxidation. The oxidation of the silicon nitride film consumes some of the silicon nitride by a reaction that produces a temporary silicon dioxide layer. The temporary silicon dioxide layer is removed with a hydrofluoric acid dilution. The silicon nitride layer is again thinned by re-oxidization as a top silicon dioxide layer is formed on the silicon nitride layer. A layer of polysilicon is deposited over the silicon nitride, forming an interpoly dielectric.