Patents by Inventor Mark Gottfried
Mark Gottfried has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20110101371Abstract: A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n? doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n? doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.Type: ApplicationFiled: December 30, 2010Publication date: May 5, 2011Applicant: Power Integrations, Inc.Inventors: TingGang Zhu, Bryan S. Shelton, Marek K. Pabisz, Mark Gottfried, Linlin Liu, Milan Pophristic, Michael Murphy, Rick Stall
-
Patent number: 7863172Abstract: A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n? doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n? doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.Type: GrantFiled: October 10, 2008Date of Patent: January 4, 2011Assignee: Power Integrations, Inc.Inventors: TingGang Zhu, Bryan S. Shelton, Marek K. Pabisz, Mark Gottfried, Linlin Liu, Milan Pophristic, Michael Murphy, Richard A. Stall
-
Publication number: 20090035925Abstract: A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n? doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n? doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.Type: ApplicationFiled: October 10, 2008Publication date: February 5, 2009Inventors: TingGang Zhu, Bryan S. Shelton, Marek K. Pabisz, Mark Gottfried, Linlin Liu, Milan Pophristic, Michael Murphy, Richard A. Stall
-
Patent number: 7439599Abstract: A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type electrode layer; forming a second type electrode layer on the intrinsic layer; etching the second type electrode layer to define a mesa shaped structure; and depositing a passivation material over the mesa shaped structure.Type: GrantFiled: March 14, 2005Date of Patent: October 21, 2008Assignee: Emcore CorporationInventors: Xiang Gao, Alex Ceruzzi, Steve Schwed, Linlin Liu, Mark Gottfried
-
Patent number: 7436039Abstract: A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n? doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n? doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.Type: GrantFiled: January 6, 2005Date of Patent: October 14, 2008Assignee: Velox Semiconductor CorporationInventors: TingGang Zhu, Bryan S. Shelton, Marek K. Pabisz, Mark Gottfried, Linlin Liu, Milan Pophristic, Michael Murphy, Richard A. Stall
-
Patent number: 7078319Abstract: A method for separating individual optoelectronic devices, such as LEDs, from a wafer includes directing a laser beam having a width toward a major surface of the semiconductor wafer. The laser beam has an image with a first portion of a first energy per unit width and a second portion of a second energy per unit width less than the first energy. The laser beam image cuts into the first major surface of the semiconductor wafer to produce individual devices.Type: GrantFiled: November 16, 2001Date of Patent: July 18, 2006Assignee: GELcore LLCInventors: Ivan Eliashevich, Mark Gottfried
-
Publication number: 20060151868Abstract: A packaged semiconductor device, in particular a gallium nitride semiconductor structure including a lower semiconductor layer and an upper semiconductor layer disposed over a portion of the lower semiconductor layer. The semiconductor structure includes a plurality of mesas projecting upwardly from the lower layer, each of the mesas including a portion of the upper layer and defining an upper contact surface separated form adjacent mesas by a portion of the lower layer surface. The device further includes a die mounting support, wherein the bottom surface of the die is attached to the top surface of the die mounting support; and a plurality of spaced external conductors extending from the support, at least once of said spaced external conductors having a bond wire post at one end thereof; with a bonding wire extending between the bond wire post and a contact region to the top surface of the plurality of mesas.Type: ApplicationFiled: January 10, 2005Publication date: July 13, 2006Inventors: TingGang Zhu, Bryan Shelton, Marek Pabisz, Mark Gottfried, Linlin Liu, Boris Peres, Alex Ceruzzi
-
Publication number: 20060145283Abstract: A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n? doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n? doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts.Type: ApplicationFiled: January 6, 2005Publication date: July 6, 2006Inventors: TingGang Zhu, Bryan Shelton, Marek Pabisz, Mark Gottfried, Linlin Liu, Milan Pophristic, Michael Murphy, Richard Stall
-
Publication number: 20060076589Abstract: A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type electrode layer; forming a second type electrode layer on the intrinsic layer; etching the second type electrode layer to define a mesa shaped structure; and depositing a passivation material over the mesa shaped structure.Type: ApplicationFiled: March 14, 2005Publication date: April 13, 2006Inventors: Xiang Gao, Alex Ceruzzi, Steve Schwed, Linlin Liu, Mark Gottfried
-
Patent number: 6946313Abstract: A method of making an electrode on a semiconductor device including depositing metal on a top surface of a semiconductor structure, and defining a first region of the semiconductor structure for a first electrode by forming a mask over the metal. The mask has an opening so that the first region is covered by the mask and a second region of the structure is aligned with the opening in the mask. Metal aligned with the opening in the mask in the second region is then removed to form a first electrode overlying the first region of the semiconductor structure, and also revealing the top surface of the semiconductor structure in the second region. Material is then removed from the semiconductor structure aligned with opening in the second region to form a second electrode surface for a second electrode.Type: GrantFiled: March 12, 2004Date of Patent: September 20, 2005Assignee: Emcore CorporationInventor: Mark Gottfried
-
Patent number: 6902990Abstract: A method for separating a semiconductor wafer into several thousand devices or dies by laser ablation. Semiconductor wafers are initially pre-processed to create multiple devices, such as blue LEDs, on the wafers. The wafers are then mounted with tape coated with a generally high level adhesive. The mounted wafer is then placed on a vacuum chuck (which is itself positioned on a computer controlled positioning table) to hold it in place during the cutting process. The cutting surface is then covered with a protective layer to prevent contamination from the effluent resulting from the actual cutting process. A laser beam is generated and passed through optical elements and masks to create a pattern, such as a line or multiple lines. The patterned laser projection is directed at the wafer at a substantially normal angle and applied to the wafer until at least a partial cut is achieved through it.Type: GrantFiled: April 2, 2002Date of Patent: June 7, 2005Assignee: Emcore CorporationInventors: Mark Gottfried, Michael G. Brown, Ivan Eliashevich, Robert F. Karlicek, Jr., James E. Nering
-
Patent number: 6849524Abstract: A method of protecting and cleaning a semiconductor wafer using laser ablation includes the following steps: applies a protective coating on the side to be cut of a wafer with sapphire substrate, mounts the other side of the sapphire wafer on an adhesive tape, mounts the sapphire wafer on a cutting table, cuts the sapphire wafer with a laser, breaks the sapphire wafer into die, and cleans the sapphire wafer with a cleaning solution that removes slag resulting from the cutting, debris resulting from the breaking, and the protective coating, but the adhesive tape, the cleaning solution, and the protective coating are selected such that the cleaning solution does not damage the adhesive tape.Type: GrantFiled: May 2, 2002Date of Patent: February 1, 2005Inventors: Bryan S. Shelton, Mark Gottfried, Stephen Schwed, Ivan Eliashevich
-
Publication number: 20050003634Abstract: A method for separating a semiconductor wafer into several thousand devices or dies by laser ablation. Semiconductor wafers are initially pre-processed to create multiple devices, such as blue LEDs, on the wafers. The wafers are then mounted with tape coated with a generally high level adhesive. The mounted wafer is then placed on a vacuum chuck (which is itself positioned on a computer controlled positioning table) to hold it in place during the cutting process. The cutting surface is then covered with a protective layer to prevent contamination from the effluent resulting from the actual cutting process. A laser beam is generated and passed through optical elements and masks to create a pattern, such as a line or multiple lines. The patterned laser projection is directed at the wafer at a substantially normal angle and applied to the wafer until at least a partial cut is achieved through it.Type: ApplicationFiled: May 13, 2004Publication date: January 6, 2005Inventors: Michael Brown, Ivan Eliashevich, Mark Gottfried, Robert Karlicek, James Nering
-
Publication number: 20040171245Abstract: A method of making an electrode on a semiconductor structure comprises utilizing a mask to remove metal from a layer of metal on a semiconductor structure and then using the same mask to remove material from the semiconductor structure. The resulting structure can ultimately form an optoelectronic device, such as an LED.Type: ApplicationFiled: March 12, 2004Publication date: September 2, 2004Inventor: Mark Gottfried
-
Publication number: 20040118825Abstract: A method for separating individual optoelectronic devices, such as LEDs, from a wafer includes directing a laser beam having a width toward a major surface of the semiconductor wafer. The laser beam has an image with a first portion of a firs energy per unit width and a second portion of a second energy per unit width less than the first energy. The laser beam image cuts into the first major surface of the semiconductor wafer to produce individual devices.Type: ApplicationFiled: February 6, 2004Publication date: June 24, 2004Inventors: Ivan Eliashevich, Mark Gottfried
-
Patent number: 6727167Abstract: A method of making a transparent electrode for a light-emitting diode includes depositing metal on a top surface of a semiconductor structure, and defining a first region of the semiconductor structure for a first electrode by forming a mask over the metal, the mask having at least one opening so that the first region is covered by the mask and a second region is aligned with the at least one opening in the mask. The method also includes removing metal aligned with the at least one opening in the mask in the second region to form the first electrode overlying the first region of the semiconductor structure and so as to reveal the top surface of the semiconductor structure in the second region.Type: GrantFiled: October 12, 2001Date of Patent: April 27, 2004Assignee: Emcore CorporationInventor: Mark Gottfried
-
Publication number: 20030003690Abstract: A method for separating a semiconductor wafer into several thousand devices or die by laser ablation. Semiconductor wafers are initially pre-processed to create multiple devices, such as blue LEDs, on the wafers. The wafers are then mounted with tape coated with a generally high level adhesive. The mounted wafer is then placed on a vacuum chuck (which is itself positioned on a computer controlled positioning table) to hold it in place during the cutting process. The cutting surface is then covered with a protective layer to prevent contamination from the effluent resulting from the actual cutting process. A laser beam is generated and passed through optical elements and masks to create a pattern, such as a line or multiple lines. The patterned laser projection is directed at the wafer at a substantially normal angle and applied to the wafer until at least a partial cut is achieved through it.Type: ApplicationFiled: May 15, 2002Publication date: January 2, 2003Inventors: James E. Nering, Robert F. Karlicek, Mark Gottfried, Ivan Eliashevich, Michael G. Brown
-
Publication number: 20020177288Abstract: A method for separating a semiconductor wafer into several thousand devices or die by laser ablation. Semiconductor wafers are initially pre-processed to create multiple devices, such as blue LEDs, on the wafers. The wafers are then mounted with tape coated with a generally high level adhesive. The mounted wafer is then placed on a vacuum chuck (which is itself positioned on a computer controlled positioning table) to hold it in place during the cutting process. The cutting surface is then covered with a protective layer to prevent contamination from the effluent resulting from the actual cutting process. A laser beam is generated and passed through optical elements and masks to create a pattern, such as a line or multiple lines. The patterned laser projection is directed at the wafer at a substantially normal angle and applied to the wafer until at least a partial cut is achieved through it.Type: ApplicationFiled: April 2, 2002Publication date: November 28, 2002Inventors: Michael G. Brown , Ivan Eliashevich , Robert F. Karlicek , James E. Nering , Mark Gottfried
-
Publication number: 20020127824Abstract: A method of protecting and cleaning a semiconductor wafer using laser ablation includes the following steps: applies a protective coating on the side to be cut of a wafer with sapphire substrate, mounts the other side of the sapphire wafer on an adhesive tape, mounts the sapphire wafer on a cutting table, cuts the sapphire wafer with a laser, breaks the sapphire wafer into die, and cleans the sapphire wafer with a cleaning solution that removes slag resulting from the cutting, debris resulting from the breaking, and the protective coating, but the adhesive tape, the cleaning solution, and the protective coating are selected such that the cleaning solution does not damage the adhesive tape.Type: ApplicationFiled: May 2, 2002Publication date: September 12, 2002Inventors: Bryan S. Shelton, Mark Gottfried, Stephen Schwed, Ivan Eliashevich
-
Publication number: 20020102760Abstract: A method of making an electrode on a semiconductor structure comprises utilizing a mask to remove metal from a layer of metal on a semiconductor structure and then using the same mask to remove material from the semiconductor structure. The resulting structure can ultimately form an optoelectronic device, such as an LED.Type: ApplicationFiled: October 12, 2001Publication date: August 1, 2002Inventor: Mark Gottfried