Patents by Inventor Mark Gudiksen
Mark Gudiksen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100155698Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Type: ApplicationFiled: June 26, 2009Publication date: June 24, 2010Applicant: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln J. Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David C. Smith, Deli Wang, Zhaohui Zhong
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Publication number: 20090057650Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Type: ApplicationFiled: February 27, 2008Publication date: March 5, 2009Applicant: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln J. Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David C. Smith, Deli Wang, Zhaohui Zhong
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Publication number: 20070281156Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Type: ApplicationFiled: March 21, 2006Publication date: December 6, 2007Applicant: President and Fellows of Harvard CollegeInventors: Charles Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David Smith, Deli Wang, Zhaohui Zhong
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Patent number: 7301199Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Type: GrantFiled: July 16, 2002Date of Patent: November 27, 2007Assignee: President and Fellows of Harvard CollegeInventors: Charles M. Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln J. Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David C. Smith, Deli Wang, Zhaohui Zhong
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Publication number: 20060175601Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Type: ApplicationFiled: June 30, 2005Publication date: August 10, 2006Applicant: President and Fellows of Harvard CollegeInventors: Charles Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David Smith, Deli Wang, Zhaohui Zhong
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Publication number: 20030089899Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.Type: ApplicationFiled: July 16, 2002Publication date: May 15, 2003Inventors: Charles M. Lieber, Xiangfeng Duan, Yi Cui, Yu Huang, Mark Gudiksen, Lincoln J. Lauhon, Jianfang Wang, Hongkun Park, Qingqiao Wei, Wenjie Liang, David C. Smith, Deli Wang, Zhaohui Zhong