Abstract: A stacked-thin-film structure that includes an Llo-ordered MnAl layer having high perpendicular magnetic anisotropy (PMA). In some embodiments, the Ll0-ordered MnAl layer has an Mn content in a range of about 35% to about 65%, a thickness less than about 50 nm, a saturation magnetization of about 100 emu/cm3 to about 600 emu/cm3 and a magnetocrystalline anisotropy of at least 1×106 erg/cm. In some embodiments, the high-PMA Llo-ordered MnAl material is incorporated in magnetic tunneling junction stacked-film structures that are part of magnetoelectronic circuitry, such as spin-transfer-torque magnetoresistive random access memory circuitry and magnetic logic circuitry. In some embodiments, the high-PMA Llo-ordered MnAl material is incorporated into other devices, such as into read/write heads and/or recording media of hard-disk-drive devices.

Abstract: A stacked-thin-film structure that includes an Llo-ordered MnAl layer having high perpendicular magnetic anisotropy (PMA). In some embodiments, the Ll0-ordered MnAl layer has an Mn content in a range of about 35% to about 65%, a thickness less than about 50 nm, a saturation magnetization of about 100 emu/cm3 to about 600 emu/cm3 and a magnetocrystalline anisotropy of at least 1×106 erg/cm. In some embodiments, the high-PMA Llo-ordered MnAl material is incorporated in magnetic tunneling junction stacked-film structures that are part of magnetoelectronic circuitry, such as spin-transfer-torque magnetoresistive random access memory circuitry and magnetic logic circuitry. In some embodiments, the high-PMA Llo-ordered MnAl material is incorporated into other devices, such as into read/write heads and/or recording media of hard-disk-drive devices.

Abstract: A magnetic recording medium comprises a magnetically soft underlayer having a plurality of cavities in a surface thereof, and a magnetic recording material in the cavities, wherein a surface of the magnetic recording material in the cavities is substantially coplanar with the surface of the soft underlayer. A recording system that includes the recording medium is also included.

Abstract: A perpendicular recording head for use with magnetic recording media includes a main pole having a concave tip. The concave tip focuses the magnetic flux from the main pole onto a smaller area of the magnetic recording medium than a conventional main pole when the main pole is at its flying height from the magnetic recording medium. Although the most preferred perpendicular recording head includes a concave cavity having an elliptical profile when viewed from the side, any substantially concave cavity may be used advantageously.

Abstract: A magnetic thin film includes a ferrite-containing underlayer and a ferrite-containing top layer. The composition of the underlayer differs from that of the top layer. During ex-situ annealing of the thin film structure, the underlayer inhibits diffusion of substrate atoms into the top layer. The composition of the underlayer relative to the top layer suppresses grain nucleation within the underlayer relative to the top layer at high temperatures and inhibits the nucleation of grains within the underlayer having undesirable composition, crystal structure, and orientation.

Abstract: A method of making c-axis perpendicularly oriented barium hexaferrite thin films by the crystallization of amorphous barium hexaferrite on a platinum underlayer is provided. Using a thin underlayer of platinum, barium hexaferrite films can be deposited by conventional rf diode or magnetron sputtering. Such deposition may be performed at room temperature, after which excellent c-axis perpendicular orientation can be achieved by rapid ex-situ annealing. The c-axis perpendicular orientation can also be achieved through in-situ annealing.

Abstract: Methods and apparatus are provided for recording, erasing and reading elongated magnetic domains on magneto-optic media using laser energy. Recording and erasing can be carried out in the absence of a reversible external magnetic bias field. The preferred magneto-optic media to be used have compensation temperatures higher than about 40.degree. C. Recording and erasing are carried out using either continuously or intermittently energized lasers.

Abstract: A new and improved unshielded horizontal magnetoresistive head is disclosed which utilizes multiple pairs of magnetoresistive elements. The present invention provides a device which is characterized by reduced output signal undershoot amplitudes, and an increased central peak pulse amplitude, while not significantly affecting the resolution of the device. The device is also characterized by increased signal to noise and signal to interference ratios. Magnetoresistive elements utilized in the device may be fabricated and/or manufactured by simplified processes, resulting in fabrication, manufacturing and cost benefits for the magnetoresistive head. Any number of additional magnetoresistive element pairs may be utilized dependent on the accuracy and resolution required by the specific application.

Abstract: An apparatus and method for detecting magnetic data on media is disclosed which utilizes an array or arrays of horizontal magnetoresistive sensors. The present invention detects the pitch or separation of magnetic transition data on the magnetic medium under test, and generates a signal that is independent of the velocity of the medium. In one embodiment, the magnetoresistive sensors employed in an array are spaced apart a distance which corresponds to the separation of magnetic transition data of interest, and the output of each sensor is connected to a voltage adder. The signal from the voltage adder is at a maximum when the separation of the magnetic transition data corresponds to the sensor separation. A comparator is connected to the output of the voltage adder, and compares the voltage adder output to a predetermined threshold voltage before indicating that a medium having a particular magnetic transition data pattern is detected.

Abstract: Methods for directly over-writing the binary data value of a bit of digital data, stored in a particular one of a multiplicity of microscopic storage regions of a thin-film magneto-optic recording layer, in the absence of a substantial externally applied bias magnetic field, employ a magnetic material having a compensation temperature a few tens of degrees centigrade above room temperature. A source of energy is energized to heat the particular storage region to a sufficiently high temperature that the self-demagnetization field of the recording layer material inverts the net magnetic moment of that region. Multiple over-writing of the long-term stable stored data values can be provided.

Abstract: An unshielded horizontal magnetoresistive head for magnetic sensing and reading devices. The horizontal unshielded magnetoresistive head is comprised of two magnetoresistive elements separated by a gap and a conductive cross member which electrically connects the magnetoresistive elements together and to a common electrical point such as system ground. A differential voltage sensing circuit is connected across the magnetoresistive elements for sensing voltage variations when magnetic data is sensed by the head. The present invention further facilitates a more simplified fabrication process which results in cost savings and more efficient fabrication methods and procedures.

Abstract: Method and system for overwriting binary data values in microscopic storage regions of a thin film ferrimagnetic layer without using external magnetic bias aiding the recording process. The ferrimagnetic layer is selected having a compensation temperature at least a few tens of degrees above room temperature. In recording data, any previously recorded data is erased to establish a known state and magnetic domains of reverse magnetic polarity are recorded when the known state differs from the binary data state by temporarily heating an area on the ferrimagnetic layer above the compensation temperature in the absence of any external aiding magnetic bias.

Abstract: A magneto-optic information storage system is disclosed suitable for compensation point recording in the absence of an external bias field. The pulse of light used to erase imparts less energy than the pulse used to write. Also disclosed is a method for directly overwriting data recorded on a magneto-optic medium by applying lower energy erasing pulses of light and higher energy writing pulses.

Abstract: Methods for directly over-writing the binary data value of a bit of digital data, stored in a particular one of a multiplicity of microscopic storage regions of a thin-film magneto-optic recording layer, first locate the storage region and non-destructively read the stored data value therefrom, and then compare the recovered value against the data value of an information bit to be stored in the same storage region. If the comparison indicates that no change in the stored data value is required, then the process proceeds to read and compare the next bit of data, from the next associated storage location. If the comparison indicates that a reversal of the magnetic moment of that region is required to store the new data value, a source of energy is energized to heat the particular storage region of a sufficiently high temperature that the self-demagnetization field of the recording layer material inverts the net magnetic moment of that region.

Abstract: Amorphous alloys of two materials having antiferromagnetically-coupled magnetization sublattices, and capable of deposition as a thin film supporting small stable domains for thermo-magnetic recording. The thin-film material is an alloy of at least one rare-earth element and a transistion-metal element. A stable domain of a few microns diameter, allowing highest density of information recording, is achieved by providing the lowest possible wall energy to the domain, with a resulting low anisotropy.

Abstract: In magnetic bubble domain chips using layers of crystalline material having in-plane magnetization for propagation, hard bubble suppression, etc., asymmetric propagation often results due to crystalline anisotropies in the layer of in-plane magnetization. In these chips, different propagation margins result for propagation in different directions with respect to the crystalline axes of the in-plane layer. In the present magnetic chip, a plurality of shift registers is provided for movement of bubble domains in a plurality of directions, all of which provide good propagation margins. The registers are aligned in particular directions with respect to the directions of easy stripout of bubble domains in order to avoid the problem of asymmetric propagation. Examples are shown using ion implanted contiguous element propagation patterns organized in a major/minor loop type of storage organization.

Abstract: A magnetic bubble domain chip having two levels of metallurgy fabricated in a single masking step and including a replicate type bubble generator. The bubble generator includes a magnetic disk which holds a seed domain during reorientation of a magnetic drive field in the plane of the magnetic bubble material, and a conductor located at the leading, i.e., cutting, edge of the magnetic disk. Current in the conductor is used to assist the splitting operation whereby a new domain is split from the stretched seed domain. The conductor includes a first portion having a relatively wide cross-section where most of the current flows through a highly conductive material, such as gold. In the area of the generator, the conductor is narrow and the current path is through the magnetic material comprising the disk.

Abstract: A magnetic bubble domain storage system comprising an array of rows and columns of logical chips are organized into logical half-chips with even numbered bits in one half-chip and odd numbered bits in the other half-chip. Alternating rows of half-chips are used for storing even numbered bits and odd numbered bits, respectively. Each half-chip has its own bubble domain generator, but a common generator current line serves all generators for a row of even half-chips and all generators for a row of odd half-chips. Thus, information is written into even half-chips and odd half-chips at the same time by pulsing the generator current line common to a row of even half-chips and a row of odd half-chips. Each half-chip has a sensing element and all the sensing elements corresponding to a row of half-chips are connected in series.

Abstract: SLM field access bubble devices which include at least one conductor crossing a bubble propagation path have severely limited operating margins (especially for small bubbles) for the bubble in the vicinity of the conductor. Apparatus and method for operating such a bubble device is disclosed which improves the device operation in this region. The improved apparatus and method provides an additional field source with a sense and magnitude to support the bubble when it reaches the conductor region. Such a field source, as disclosed, includes a current pulse in the conductor.

Abstract: A magnetic bubble domain propagation device which is single sided and can be used to move bubble domains in amorphous magnetic films. The propagation structure is comprised of either one or two layers located on a single side of the amorphous magnetic medium. Preferably, the propagation elements in each layer are contiguous to one another to provide maximum density. In a preferred embodiment, the propagation elements are circular, but other geometries can be used. The amorphous magnetic material is deposited over these underlayer propagation elements in order to create a change in the profile of the amorphous material. This change in profile of the amorphous material acts as a restraining barrier to bubble domain movement, so that the bubble domains will move along the proper channel without drifting to other propagation channels, and will move from one propagation element to the next without merely idling at any of the propagation elements.