Patents by Inventor Mark H. Wilcoxson
Mark H. Wilcoxson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10431458Abstract: Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. In many embodiments, a mask shrink layer is deposited on a patterned mask layer to thereby narrow the openings in the mask layer. The mask shrink layer may be deposited through a vapor deposition process including, but not limited to, atomic layer deposition or chemical vapor deposition. The mask shrink layer can result in narrower, more vertically uniform etched features. In some embodiments, etching is completed in a single etch step. In some other embodiments, the etching may be done in stages, cycled with a deposition step designed to deposit a protective sidewall coating on the partially etched features. Metal-containing films are particularly suitable as mask shrink films and protective sidewall coatings.Type: GrantFiled: November 22, 2016Date of Patent: October 1, 2019Assignee: LAM RESEARCH CORPORATIONInventors: Eric A. Hudson, Mark H. Wilcoxson, Kalman Pelhos, Hyunjong Shim, Merrett Wong
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Patent number: 10170323Abstract: Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation.Type: GrantFiled: February 23, 2017Date of Patent: January 1, 2019Assignee: Lam Research CorporationInventors: Eric A. Hudson, Mark H. Wilcoxson, Kalman Pelhos, Hyung Joo Shin
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Publication number: 20180286642Abstract: An apparatus for processing a substrate is provided. A first coolant gas pressure system, a second coolant gas pressure system, a third coolant gas pressure system, and a fourth coolant gas pressure system are provided to provide independent gas pressures. An electrostatic chuck has a chuck surface with a center point and a radius and comprises a first plurality of coolant gas ports further than a first radius from a center point, a second plurality of coolant gas ports spaced between the first radius from the center point and a second radius from the center point, a third plurality of coolant gas ports spaced between the second radius from the center point and a third radius from the center point, and a fourth plurality of coolant gas ports is spaced within the third radius from the center point. An outer sealing band extends around the chuck surface.Type: ApplicationFiled: March 30, 2018Publication date: October 4, 2018Inventors: Alexander MATYUSHKIN, John Patrick HOLLAND, Mark H. WILCOXSON, Keith COMENDANT, Taner OZEL, Fangli HAO
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Publication number: 20170170026Abstract: Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation.Type: ApplicationFiled: February 23, 2017Publication date: June 15, 2017Inventors: Eric A. Hudson, Mark H. Wilcoxson, Kalman Pelhos, Hyung Joo Shin
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Patent number: 9620377Abstract: Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation.Type: GrantFiled: July 20, 2015Date of Patent: April 11, 2017Assignee: Lab Research CorporationInventors: Eric A. Hudson, Mark H. Wilcoxson, Kalman Pelhos, Hyung Joo Shin
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Publication number: 20170076945Abstract: Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. In many embodiments, a mask shrink layer is deposited on a patterned mask layer to thereby narrow the openings in the mask layer. The mask shrink layer may be deposited through a vapor deposition process including, but not limited to, atomic layer deposition or chemical vapor deposition. The mask shrink layer can result in narrower, more vertically uniform etched features. In some embodiments, etching is completed in a single etch step. In some other embodiments, the etching may be done in stages, cycled with a deposition step designed to deposit a protective sidewall coating on the partially etched features. Metal-containing films are particularly suitable as mask shrink films and protective sidewall coatings.Type: ApplicationFiled: November 22, 2016Publication date: March 16, 2017Inventors: Eric A. Hudson, Mark H. Wilcoxson, Kalman Pelhos, Hyunjong Shim, Merrett Wong
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Patent number: 9543148Abstract: Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. In many embodiments, a mask shrink layer is deposited on a patterned mask layer to thereby narrow the openings in the mask layer. The mask shrink layer may be deposited through a vapor deposition process including, but not limited to, atomic layer deposition or chemical vapor deposition. The mask shrink layer can result in narrower, more vertically uniform etched features. In some embodiments, etching is completed in a single etch step. In some other embodiments, the etching may be done in stages, cycled with a deposition step designed to deposit a protective sidewall coating on the partially etched features. Metal-containing films are particularly suitable as mask shrink films and protective sidewall coatings.Type: GrantFiled: September 1, 2015Date of Patent: January 10, 2017Assignee: Lam Research CorporationInventors: Eric A. Hudson, Mark H. Wilcoxson, Kalman Pelhos, Hyunjong Shim, Merrett Wong
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Publication number: 20160163558Abstract: Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating (e.g., a metal-containing coating) on the sidewalls of the feature to prevent lateral etch of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reaction mechanisms that result in substantially complete sidewall coating. Metal-containing coatings have been shown to provide particularly good resistance to lateral etch during the etching operation.Type: ApplicationFiled: July 20, 2015Publication date: June 9, 2016Inventors: Eric A. Hudson, Mark H. Wilcoxson, Kalman Pelhos, Hyung Joo Shin
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Patent number: 8440573Abstract: A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collapse can be repaired to allow for additional processing of the wafer. In some instance, pattern collapse can be repaired via etching where the etching breaks bonds that can have formed during pattern collapse.Type: GrantFiled: January 26, 2010Date of Patent: May 14, 2013Assignee: Lam Research CorporationInventors: Katrina Mikhaylichenko, Denis Syomin, Qian Fu, Glenn W. Gale, Shenjian Liu, Mark H. Wilcoxson
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Publication number: 20120199164Abstract: A method for processing a substrate includes an operation of positioning a surface of a head proximate to a surface of the substrate. The surface of the head has a length and a plurality of ports that are configured in rows along the length of the head. Each row of ports can deliver a fluid to the surface of the substrate or deliver a vacuum to remove the fluid from the surface of the substrate. The method also includes an operation of controlling delivery of the fluid to one or more selected rows and delivery of the vacuum to one or more selected rows so that at least one meniscus is formed whose width depends on a desired exposure time of the meniscus to the surface of the substrate for a particular speed of relative movement between the head and the substrate.Type: ApplicationFiled: April 20, 2012Publication date: August 9, 2012Inventors: Mark H. Wilcoxson, Christopher J. Radin
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Patent number: 8127395Abstract: An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.Type: GrantFiled: May 5, 2006Date of Patent: March 6, 2012Assignee: Lam Research CorporationInventors: Hyungsuk Alexander Yoon, Andrew D. Bailey, III, Jason A. Ryder, Mark H. Wilcoxson, Jeffrey G. Gasparitsch, Randy Johnson, Stephan P. Hoffmann
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Publication number: 20110183522Abstract: A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collapse can be repaired to allow for additional processing of the wafer. In some instance, pattern collapse can be repaired via etching where the etching breaks bonds that can have formed during pattern collapse.Type: ApplicationFiled: January 26, 2010Publication date: July 28, 2011Applicant: LAM RESEARCH CORPORATIONInventors: Katrina Mikhaylichenko, Denis Syomin, Qian Fu, Glenn W. Gale, Shenjian Liu, Mark H. Wilcoxson
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Publication number: 20090113656Abstract: An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.Type: ApplicationFiled: May 5, 2006Publication date: May 7, 2009Applicant: LAM RESEARCH CORPORATIONInventors: Hyungsuk Alexander Yoon, Andrew D. Bailey, III, Jason A. Ryder, Mark H. Wilcoxson, Jeffrey G. Gasparitsch, Randy Johnson, Stephan P. Hoffmann
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Publication number: 20080149147Abstract: An apparatus for processing a substrate is disclosed. The apparatus includes a proximity head having a surface that can be interfaced in proximity to a surface of a substrate. The proximity head has a plurality of dispensing ports capable of dispensing a first process mixture and a second process mixture to the surface of the substrate. The proximity head also has a plurality of removal ports capable of removing the first and second process mixtures from the surface of the substrate. The apparatus also has a distribution manifold connected to the plurality of dispensing ports for dispensing the first process mixture and second process mixture. The distribution manifold is connected to the plurality of removal ports, and is structured to define selected regions of the proximity head for delivery and removal of the first process mixture and the second process mixture.Type: ApplicationFiled: May 9, 2007Publication date: June 26, 2008Applicant: LAM RESEARCHInventors: Mark H. Wilcoxson, Christopher J. Radin
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Patent number: 7347915Abstract: A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.Type: GrantFiled: January 5, 2006Date of Patent: March 25, 2008Assignee: LAM Research CorporationInventors: Douglas L. Keil, Wan-Lin Chen, Eric A. Hudson, S. M. Reza Sadjadi, Mark H. Wilcoxson, Andrew D. Bailey, III
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Patent number: 7294580Abstract: A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.Type: GrantFiled: June 3, 2004Date of Patent: November 13, 2007Assignee: Lam Research CorporationInventors: Seokmin Yun, Ji Zhu, Peter Cirigliano, Sangheon Lee, Thomas S. Choi, Peter Loewenhardt, Mark H. Wilcoxson, Reza Sadjadi, Eric A. Hudson, James V. Tietz
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Patent number: 7022611Abstract: A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.Type: GrantFiled: April 28, 2003Date of Patent: April 4, 2006Assignee: Lam Research CorporationInventors: Douglas L. Keil, Wan-Lin Chen, Eric A. Hudson, S. M. Reza Sadjadi, Mark H. Wilcoxson, Andrew D. Bailey, III
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Patent number: 6873112Abstract: The invention provides a method, for processing a substrate. The substrate is placed in a chamber, where the chamber comprises a substrate holder within the chamber and a dielectric window forming a side of the chamber. A gas is provided into the chamber. An antenna is used to generate an azimuthally symmetric electric field. A substantially azimuthally symmetric plasma is formed from the gas using the azimuthally symmetric electric field. A substantially uniform process rate is produced across a surface of a substrate.Type: GrantFiled: February 13, 2004Date of Patent: March 29, 2005Assignee: Lam Research CorporationInventors: Mark H. Wilcoxson, Andrew D. Bailey, III
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Publication number: 20040224520Abstract: A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.Type: ApplicationFiled: June 3, 2004Publication date: November 11, 2004Applicant: Lam Research CorporationInventors: Seokmin Yun, Ji Zhu, Peter Cirigliano, Sangheon Lee, Thomas S. Choi, Peter Loewenhardt, Mark H. Wilcoxson, Reza Sadjadi, Eric A. Hudson, James V. Tietz
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Publication number: 20040216676Abstract: The invention provides a method, for processing a substrate. The substrate is placed in a chamber, where the chamber comprises a substrate holder within the chamber and a dielectric window forming a side of the chamber. A gas is provided into the chamber. An antenna is used to generate an azimuthally symmetric electric field. A substantially azimuthally symmetric plasma is formed from the gas using the azimuthally symmetric electric field. A substantially uniform process rate is produced across a surface of a substrate.Type: ApplicationFiled: February 13, 2004Publication date: November 4, 2004Inventors: Mark H. Wilcoxson, Andrew D. Bailey