Patents by Inventor Mark Hampel

Mark Hampel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7042013
    Abstract: A radiation-emitting semiconductor component having a layer structure which contains an n-doped cladding layer (18), a p-doped cladding layer (20), and an active layer (14) based on InGaAlP arranged between the n-doped cladding layer (18) and the p-doped cladding layer (20). A diffusion stop layer (16) is arranged between the active layer (14) and the p-doped cladding layer (20). The diffusion stop layer (16) is formed by a strained superlattice.
    Type: Grant
    Filed: August 22, 2003
    Date of Patent: May 9, 2006
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Norbert Linder, Peter Stauss, Mark Hampel, Klaus Streubel
  • Publication number: 20040135165
    Abstract: A radiation-emitting semiconductor component having a layer structure which contains an n-doped cladding layer (18), a p-doped cladding layer (20), and an active layer (14) based on InGaAlP arranged between the n-doped cladding layer (18) and the p-doped cladding layer (20). A diffusion stop layer (16) is arranged between the active layer (14) and the p-doped cladding layer (20). The diffusion stop layer (16) is formed by a strained superlattice.
    Type: Application
    Filed: August 22, 2003
    Publication date: July 15, 2004
    Applicant: Osram Opto Semiconductors GmbH
    Inventors: Norbert Linder, Peter Stauss, Mark Hampel, Klaus Streubel