Patents by Inventor Mark Heyns

Mark Heyns has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Graphene-based semiconductor device
    Patent number: 9337273
    Abstract: A semiconductor device is provided comprising a bilayer graphene comprising a first and a second adjacent graphene layer, and a first electrically insulating layer contacting the first graphene layer, the first electrically insulating layer comprising an electrically insulating material, and a substance suitable for creating free charge carriers of a first type in the first graphene layer, the semiconductor device further comprising an electrically insulating region contacting the second graphene layer and suitable for creating free charge carriers of a second type, opposite to the first type, in the second graphene layer.
    Type: Grant
    Filed: March 29, 2013
    Date of Patent: May 10, 2016
    Assignees: IMEC, Katholieke Universiteit Leuven, K.U. Leuven R&D
    Inventors: Amirhasan Nourbakhsh, Mirco Cantoro, Cedric Huyghebaert, Mark Heyns, Stefan DeGendt
  • Metal rinsing process with controlled metal microcorrosion reduction
    Patent number: 6153018
    Abstract: Process for rinsing a metallized substrate subject to metal microcorrosion using an acidic aqueous rinsing solution wherein the rinsing solution comprises at least one strong inorganic acid in an amount enough to reduce the alkalinity of the rinse solution to a level low enough to reduce microcorrosion of the said metal layer while rinsing.
    Type: Grant
    Filed: December 9, 1997
    Date of Patent: November 28, 2000
    Assignee: Interuniversitair Microelektronica Centrum
    Inventors: Antonio L. P. Rotondaro, Rita Vos, Mark Heyns
  • Method for semiconductor processing using mixtures of HF and carboxylic acid
    Patent number: 5922624
    Abstract: Method for semiconductor processing comprising etching of oxide layers, especially etching thick SiO.sub.2 layers and/or last step in the cleaning process wherein the oxide layers are etched in the gas phase with a mixture of hydrogen fluoride and one or more carboxylic acids, eventually in admixture with water.
    Type: Grant
    Filed: December 23, 1996
    Date of Patent: July 13, 1999
    Assignee: IMEC vzw
    Inventors: Steven Verhaverbeke, Mark Heyns, Menso Hendriks, Rene de Blank