Abstract: A piercing device for use with a jewelry bar is provided. The piercing device is removably connectable to the jewelry bar so that the jewelry bar is immediately inserted into the pierced hole created by the piercing device.

Abstract: A signalling point of a telecommunications network comprises a Transport Independent Call Control (TICC) part 4. A signalling transport part 6 is arranged to exchange call control signalling information with the TICC part 4 and with a peer TICC part at a remote signalling point. A signalling transport converter 5 is arranged logically between the TICC part 4 and said signalling transport part 6 and is arranged to present a standard interface to the TICC part 4 and a specific interface to the signalling transport part 6, wherein said call control signalling is exchanged between the TICC part 4 and the signalling transport part 6 via the signalling transport converter 5.

Abstract: A method for preparing a nucleic acid component of a sample for amplification includes contacting the sample with a porous support that deactivates a nucleic acid amplification inhibitor component of the sample and directing a fluid through the porous support, whereby the nucleic acid component of the sample is directed through at least a portion of the porous support and is separated from the support, thereby preparing the nucleic acid component for amplification. The sample is separated from raw sample components through means that include a magnetic substrate. An apparatus suitable for conducting the method of the invention also is described.

Abstract: A method of negotiating a call capability between signalling points in a telecommunications system. The method comprises sending a capability preference or prioritised list of preferences from an originating signalling point to a terminating signalling point or signalling transfer point, at the Call Control level. A capability acceptance is returned from the terminating signalling point or signalling transfer point to the originating signalling point at the Call Control level, if the terminating signalling point or signalling transfer point accepts a preference sent by the originating signalling point.

Abstract: A method of signalling in a telecommunications network comprises generating signalling messages at an Application Part or a User part of an originating signalling point, the messages having a maximum length of 272 octets. The generated signaling messages are transferred to a Message Transfer Part layer 3 (MTP3) of the originating signalling point, and on the basis of the destination signalling point of the received signalling message, it is determined whether or not the message is to be transmitted over an NNI-SAAL signalling link. If the message is to be transmitted over an NNI-SAAL signalling link, the message is transferred to an NNI-SAAL part of the originating signalling point. If the message is not to be transmitted over an NNI-SAAL signalling link, the message is transferred to an MTP2 part of the originating point.

Abstract: A method of negotiating a call capability between signalling points in a telecommunications system. The method comprises sending a capability preference or prioritised list of preferences from an originating signalling point to a terminating signalling point or signalling transfer point, at the Call Control level. A capability acceptance is returned from the terminating signalling point or signalling transfer point to the originating signalling point at the Call Control level, if the terminating signalling point or signalling transfer point accepts a preference sent by the originating signalling point.

Abstract: In a method for the control of a connection in a communication network comprising a plurality of nodes (MSC, TSN, MG), a connection (CO) is established stepwise between nodes (MSC, TSN, MG). At least two of the nodes (MSC, TSN, MG) are adapted to insert an entity into the connection (CO), the entity affecting the connection quality, or to remove an entity affecting the connection quality from the connection. An indicator is forwarded between nodes controlling the connection (CO) wherein the indicator indicates whether the connection (CO) comprises an entity affecting the connection quality. A node which decides to insert an entity into the connection or remove an entity adjusts the indicator accordingly before forwarding it to a further node (MSC, TNS, MSC′) controlling the connection (CO). A node (MSC, TSN, MSC′) controlling the connection (CO) checks the value of the indicator when it performs a decision to insert or remove an entity.

Abstract: A method for preparing a nucleic acid component of a sample for amplification includes contacting the sample with a porous support that deactivates a nucleic acid amplification inhibitor component of the sample and directing a fluid through the porous support, whereby the nucleic acid component of the sample is directed through at least a portion of the porous support and is separated from the support, thereby preparing the nucleic acid component for amplification.

Abstract: A method and apparatus for identifying molecular structures within a sample substance using an array having a plurality of test sites upon which the sample substance is applied. Each test site includes a probe formed therein to bond with an associated target molecular structure. An electrical signal is applied to the test site and the electrical properties of the test sites are detected to determine which probes have bonded to an associated target molecular structure.

Abstract: A method and apparatus are disclosed for identifying molecular structures within a sample substance using a monolithic array of test sites formed on a substrate upon which the sample substance is applied. Each test site includes probes formed therein to bond with a predetermined target molecular structure or structures. A signal is applied to the test sites and certain electrical, mechanical and/or optical properties of the test sites are detected to determine which probes have bonded to an associated target molecular structure.

Abstract: An engine mounting system for an internal combustion engine includes a bracket adapted for attachment to an engine and detachable locator members which are attached to fasteners extending axially from the bracket through the frame member of a vehicle. The detachable locator members wedge the engine mounting brackets into a desired location upon the frame crossmember. Once the engine has been decked, the locator members may be removed so as to allow installation of additional fastening elements.

Abstract: A method and apparatus for identifying molecular structures within a sample substance using an array having a plurality of test sites upon which the sample substance is applied. Each test site includes a probe formed therein to bond with an associated target molecular structure. An electrical signal is applied to the test site and the electrical properties of the test sites are detected to determine which probes have bonded to an associated target molecular structure.

Abstract: A method and apparatus are disclosed for identifying molecular structures within a sample substance using a monolithic array of test sites formed on a substrate upon which the sample substance is applied. Each test site includes probes formed therein to bond with a predetermined target molecular structure or structures. A signal is applied to the test sites and certain electrical, mechanical and/or optical properties of the test sites are detected to determine which probes have bonded to an associated target molecular structure.

Abstract: A method and apparatus for identifying molecular structures within a sample substance using an array having a plurality of test sites upon which the sample substance is applied. Each test site includes a probe formed therein to bond with an associated target molecular structure. An electrical signal is applied to the test site and the electrical properties of the test sites are detected to determine which probes have bonded to an associated target molecular structure.

Abstract: An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150.degree. to about 300.degree. C.

Abstract: An ultra-high-speed photoconductive device is described which comprises a homoepitaxial semi-insulating III-V layer, or body, upon which ohmic/conductive contacts, or strips, separated by a small gap, are formed. The semi-insulating body, or layer, is produced by low temperature growth of III-V compounds by MBE. In a GaAs embodiment, the layer is grown under arsenic stable growth conditions, at a substrate temperature preferably in the range of 150.degree. to about 300.degree. C.

Abstract: The base layer of a power permeable base transistor is formed as comb structures with grating teeth of the combs extending into active regions of semiconductor material. Extended active regions are separated by inactive regions over which collector contacts extend. Large devices have digitated base layers. The comb structures are fabricated by sputtering a uniform layer of tungsten and forming a nickel mask over the tungsten by both X-ray and photolithography techniques. The tungsten exposed by the nickel mask is then etched to leave the comb structures.

Abstract: A vertical transistor device is characterized by active regions vertically separated by a narrower control region. The control region is defined by conducting layer extensions which extend into a groove within which semiconductor material is regrown during device fabrication. The device is further characterized by regions of isolating material, located horizontally adjacent to the active regions, said isolating material serving to reduce parasitic capacitance and improve thermal distribution within the device, thereby improving frequency and power performance.

Abstract: A vertical transistor device is characterized by active regions vertically separated by a narrower control region. The control region is defined by conducting layer extensions which extend into a groove within which semiconductor material is regrown during device fabrication. The device is further characterized by regions of isolating material, located horizontally adjacent to the active regions, said isolating material serving to reduce parasitic capacitance and improve thermal distribution within the device, thereby improving frequency and power performance.

Abstract: Horizontal and vertical transistors, such as, HEMT/SDHT devices are described with opposed gates for preventing substrate leakage current along with the methods for making same. Also a process for making single gate angled V-HEMT devices is described.