Patents by Inventor Mark Howell Somervell

Mark Howell Somervell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Immersion lithography wafer edge bead removal for wafer and scanner defect prevention
    Patent number: 8318607
    Abstract: A method of performing a single step/single solvent edge bead removal (EBR) process on a photolithography layer stack including a photoresist layer and a top coat layer using propylene glycol monomethyl ether acetate (PGMEA) or a mixture of PGMEA and gamma-butyrolactone (GBL) is disclosed. The single step/single solvent EBR process is compatible with organic and inorganic BARC layers.
    Type: Grant
    Filed: December 19, 2008
    Date of Patent: November 27, 2012
    Assignee: Texas Instruments Incorporated
    Inventors: Benjamen Michael Rathsack, Mark Howell Somervell
  • IMMERSION LITHOGRAPHY WAFER EDGE BEAD REMOVAL FOR WAFER AND SCANNER DEFECT PREVENTION
    Publication number: 20090163026
    Abstract: A method of performing a single step/single solvent edge bead removal (EBR) process on a photolithography layer stack including a photoresist layer and a top coat layer using propylene glycol monomethyl ether acetate (PGMEA) or a mixture of PGMEA and gamma-butyrolactone (GBL) is disclosed. The single step/single solvent EBR process is compatible with organic and inorganic BARC layers.
    Type: Application
    Filed: December 19, 2008
    Publication date: June 25, 2009
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Benjamen Michael Rathsack, Mark Howell Somervell