Patents by Inventor Mark I. Wagner
Mark I. Wagner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9620410Abstract: Methods for processing a microelectronic topography include selectively etching a layer of the topography using an etch solution which includes a fluid in a supercritical or liquid state. In some embodiments, the etch process may include introducing a fresh composition of the etch solution into a process chamber while simultaneously venting the chamber to inhibit the precipitation of etch byproducts. A rinse solution including the fluid in a supercritical or liquid state may be introduced into the chamber subsequent to the etch process. In some cases, the rinse solution may include one or more polar cosolvents, such as acids, polar alcohols, and/or water mixed with the fluid to help inhibit etch byproduct precipitation. In addition or alternatively, at least one of the etch solution and rinse solution may include a chemistry which is configured to modify dissolved etch byproducts within an ambient of the topography to inhibit etch byproduct precipitation.Type: GrantFiled: January 20, 2009Date of Patent: April 11, 2017Assignee: Lam Research CorporationInventors: Mark I. Wagner, James P. DeYoung
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Patent number: 9004086Abstract: A processing chamber for post-wet-etch removing of drying fluid (DF) is disclosed. The chamber includes a chamber wall surrounding a processing volume and a plurality of nozzles disposed annularly about the processing volume and arranged into a set of nozzle rows that includes at least one nozzle row. The chamber also includes a plenum and a set of manifolds coupled to the plurality of nozzles to deliver the supercritical CO2 to the plurality of nozzles. Each nozzle has a nozzle outlet directed toward an interior portion of the processing volume and the nozzles are configured to flow the supercritical CO2 toward the substrates in a manner that minimizes recirculation loops and vortices.Type: GrantFiled: November 4, 2010Date of Patent: April 14, 2015Assignee: Lam Research CorporationInventors: Ronda K. Nixon, Iqbal A. Shareef, Mark I. Wagner, Robert McAndrew, Tony Ray Kroeker
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Patent number: 8961701Abstract: Drying a microelectronic topography. At least some of the illustrative embodiments are methods that include placing a microelectronic topography inside a process chamber, providing a non-aqueous liquid to the process chamber until at least 90% of the volume of the process chamber contains the non-aqueous liquid, pressurizing the process chamber by way of a fluid different than the non-aqueous liquid, ceasing activity with respect to the process chamber until the non-aqueous liquid and fluid form a mixture that is substantially homogenous, venting the process chamber while simultaneously providing the fluid to the process chamber, and venting the process chamber in a manner which prevents formation of liquid in the process chamber.Type: GrantFiled: September 18, 2009Date of Patent: February 24, 2015Assignee: Lam Research CorporationInventors: Mark I. Wagner, James P. DeYoung
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Publication number: 20120111379Abstract: A processing chamber for post-wet-etch removing of drying fluid (DF) is disclosed. The chamber includes a chamber wall surrounding a processing volume and a plurality of nozzles disposed annularly about the processing volume and arranged into a set of nozzle rows that includes at least one nozzle row. The chamber also includes a plenum and a set of manifolds coupled to the plurality of nozzles to deliver the supercritical CO2 to the plurality of nozzles. Each nozzle has a nozzle outlet directed toward an interior portion of the processing volume and the nozzles are configured to flow the supercritical CO2 toward the substrates in a manner that minimizes recirculation loops and vortices.Type: ApplicationFiled: November 4, 2010Publication date: May 10, 2012Inventors: Ronda K. Nixon, Iqbal A. Shareef, Mark I. Wagner, Robert McAndrew, Tony Ray Kroeker
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Patent number: 8153533Abstract: Methods for preventing feature collapse subsequent to etching a layer encasing the features include adding a non-aqueous liquid to a microelectronic topography having remnants of an aqueous liquid arranged upon its surface and subsequently exposing the topography to a pressurized chamber including a fluid at or greater than its saturated vapor pressure or critical pressure. The methods include flushing from the pressurized chamber liquid arranged upon the topography and, thereafter, venting the chamber in a manner sufficient to prevent liquid formation therein. The topography features may be submerged in a liquid while pressurizing the chamber. A process chamber used to prevent feature collapse includes a substrate holder for supporting a microelectronic topography, a vessel configured to contain the substrate holder, and a sealable region surrounding the substrate holder and the vessel. The chamber is configured to sequester wet chemistry supplied to the vessel from metallic surfaces of the sealable region.Type: GrantFiled: September 24, 2008Date of Patent: April 10, 2012Assignee: Lam ResearchInventors: James P. DeYoung, Mark I. Wagner
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Publication number: 20100184301Abstract: Methods for processing a microelectronic topography include selectively etching a layer of the topography using an etch solution which includes a fluid in a supercritical or liquid state. In some embodiments, the etch process may include introducing a fresh composition of the etch solution into a process chamber while simultaneously venting the chamber to inhibit the precipitation of etch byproducts. A rinse solution including the fluid in a supercritical or liquid state may be introduced into the chamber subsequent to the etch process. In some cases, the rinse solution may include one or more polar cosolvents, such as acids, polar alcohols, and/or water mixed with the fluid to help inhibit etch byproduct precipitation. In addition or alternatively, at least one of the etch solution and rinse solution may include a chemistry which is configured to modify dissolved etch byproducts within an ambient of the topography to inhibit etch byproduct precipitation.Type: ApplicationFiled: January 20, 2009Publication date: July 22, 2010Applicant: LAM RESEARCHInventors: Mark I. Wagner, James P. DeYoung
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Publication number: 20100071726Abstract: Drying a microelectronic topography. At least some of the illustrative embodiments are methods that include placing a microelectronic topography inside a process chamber, providing a non-aqueous liquid to the process chamber until at least 90% of the volume of the process chamber contains the non-aqueous liquid, pressurizing the process chamber by way of a fluid different than the non-aqueous liquid, ceasing activity with respect to the process chamber until the non-aqueous liquid and fluid form a mixture that is substantially homogenous, venting the process chamber while simultaneously providing the fluid to the process chamber, and venting the process chamber in a manner which prevents formation of liquid in the process chamber.Type: ApplicationFiled: September 18, 2009Publication date: March 25, 2010Applicant: LAM RESEARCH CORPORATIONInventors: Mark I. Wagner, James P. DeYoung
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Publication number: 20100072169Abstract: Methods for preventing feature collapse subsequent to etching a layer encasing the features include adding a non-aqueous liquid to a microelectronic topography having remnants of an aqueous liquid arranged upon its surface and subsequently exposing the topography to a pressurized chamber including a fluid at or greater than its saturated vapor pressure or critical pressure. The methods include flushing from the pressurized chamber liquid arranged upon the topography and, thereafter, venting the chamber in a manner sufficient to prevent liquid formation therein. The topography features may be submerged in a liquid while pressurizing the chamber. A process chamber used to prevent feature collapse includes a substrate holder for supporting a microelectronic topography, a vessel configured to contain the substrate holder, and a sealable region surrounding the substrate holder and the vessel. The chamber is configured to sequester wet chemistry supplied to the vessel from metallic surfaces of the sealable region.Type: ApplicationFiled: September 24, 2008Publication date: March 25, 2010Applicant: LAM RESEARCHInventors: James P. DeYoung, Mark I. Wagner, Tony R. Kroeker
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Patent number: 7592035Abstract: A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.Type: GrantFiled: October 28, 2005Date of Patent: September 22, 2009Assignee: Micell Technologies, Inc.Inventors: James P. DeYoung, James B. McClain, Stephen M. Gross, Doug Taylor, Mark I. Wagner, David Brainard
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Patent number: 7141496Abstract: A method of treating a dielectric surface portion of a semiconductor substrate, comprising the steps of: (a) providing a semiconductor substrate having a dielectric surface portion; and then (b) treating said dielectric surface portion with a coating reagent, the coating reagent comprising a reactive group coupled to a coordinating group, with the coordinating group having a metal bound thereto, so that the metal is deposited on the dielectric surface portion to produce a surface portion treated with a metal.Type: GrantFiled: January 22, 2004Date of Patent: November 28, 2006Assignee: MiCell Technologies, Inc.Inventors: James P. DeYoung, James B. McClain, Stephen M. Gross, Doug Taylor, Mark I. Wagner, David Brainard
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Patent number: 6989172Abstract: A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.Type: GrantFiled: October 8, 2003Date of Patent: January 24, 2006Assignee: Micell Technologies, Inc.Inventors: James P. DeYoung, James B. McClain, Stephen M. Gross, Doug Taylor, Mark I. Wagner, David Brainard
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Patent number: 6953041Abstract: Compositions useful for cleaning metal from a substrate or coating metal onto a substrate are described: Such compositions comprise (a) a densified carbon dioxide continuous phase; (b) a polar discrete phase in said carbon dioxide continuous phase; (c) a metal in said discrete phase (i.e., a metal removed from the substrate, or to be coated onto the substrate); (d) at least one ligand in said continuous phase, said discrete phase, or both said continuous and said discrete phase.Type: GrantFiled: October 9, 2002Date of Patent: October 11, 2005Assignee: MiCell Technologies, Inc.Inventors: James P. DeYoung, James B. McClain, Stephen M. Gross, Mark I. Wagner
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Patent number: 6905555Abstract: A method of displacing a supercritical fluid from a pressure vessel (e.g., in a microelectronic manufacturing process), with the steps of: providing an enclosed pressure vessel containing a first supercritical fluid (said supercritical fluid preferably comprising carbon dioxide); adding a second fluid (typically also a supercritical fluid) to said vessel, with said second fluid being added at a pressure greater than the pressure of the first supercritical fluid, and with said second fluid having a density less than that of the first supercritical fluid; forming an interface between the first supercritical fluid and the second fluid; and displacing at least a portion of the first supercritical fluid from the vessel with the pressure of the second, preferably fluid while maintaining the interface therebetween.Type: GrantFiled: May 30, 2003Date of Patent: June 14, 2005Assignee: MiCell Technologies, Inc.Inventors: James P. DeYoung, James B. McClain, Stephen M. Gross, Mark I. Wagner
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Publication number: 20040146636Abstract: A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.Type: ApplicationFiled: October 8, 2003Publication date: July 29, 2004Inventors: James P. DeYoung, James B. McClain, Stephen M. Gross, Doug Taylor, Mark I. Wagner, David Brainard
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Publication number: 20040071873Abstract: Compositions useful for cleaning metal from a substrate or coating metal onto a substrate are described: Such compositions comprise (a) a densified carbon dioxide continuous phase; (b) a polar discrete phase in said carbon dioxide continuous phase; (c) a metal in said discrete phase (i.e., a metal removed from the substrate, or to be coated onto the substrate); (d) at least one ligand in said continuous phase, said discrete phase, or both said continuous and said discrete phase.Type: ApplicationFiled: October 9, 2002Publication date: April 15, 2004Inventors: James P. DeYoung, James B. McClain, Stephen M. Gross, Mark I. Wagner
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Publication number: 20040045588Abstract: A method of cleaning a microelectronic substrate is carried out by providing a cleaning fluid, the cleaning fluid comprising an adduct of hydrogen fluoride with a Lewis base in a carbon dioxide solvent; and then cleaning the substrate by contacting the substrate to the cleaning fluid for a time sufficient to clean the substrate.Type: ApplicationFiled: September 10, 2003Publication date: March 11, 2004Inventors: James P. DeYoung, Stephen M. Gross, Mark I. Wagner, James B. McClain
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Publication number: 20040020518Abstract: A method of displacing a supercritical fluid from a pressure vessel (e.g., in a microelectronic manufacturing process), comprises the steps of: providing an enclosed pressure vessel containing a first supercritical fluid (said supercritical fluid preferably comprising carbon dioxide); adding a second fluid (typically also a supercritical fluid) to said vessel, with said second fluid being added at a pressure greater than the pressure of the first supercritical fluid, and with said second fluid having a density less than that of the first supercritical fluid; forming an interface between the first supercritical fluid and the second fluid; and displacing at least a portion of the first supercritical fluid from the vessel with the pressure of the second, preferably fluid while maintaining the interface therebetween.Type: ApplicationFiled: May 30, 2003Publication date: February 5, 2004Inventors: James P. DeYoung, James B. McClain, Stephen M. Gross, Mark I. Wagner
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Patent number: 6669785Abstract: A method of cleaning a microelectronic substrate is carried out by providing a cleaning fluid, the cleaning fluid comprising an adduct of hydrogen fluoride with a Lewis base in a carbon dioxide solvent; and then cleaning the substrate by contacting the substrate to the cleaning fluid for a time sufficient to clean the substrate.Type: GrantFiled: May 15, 2002Date of Patent: December 30, 2003Assignee: Micell Technologies, Inc.Inventors: James P. DeYoung, Stephen M. Gross, Mark I. Wagner, James B. McClain
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Publication number: 20030216269Abstract: A method of cleaning a microelectronic substrate is carried out by providing a cleaning fluid, the cleaning fluid comprising an adduct of hydrogen fluoride with a Lewis base in a carbon dioxide solvent; and then cleaning the substrate by contacting the substrate to the cleaning fluid for a time sufficient to clean the substrate.Type: ApplicationFiled: May 15, 2002Publication date: November 20, 2003Inventors: James P. DeYoung, Stephen M. Gross, Mark I. Wagner, James B. McClain
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Patent number: 6355735Abstract: A semi-interpenetrating polymer network including at least one epoxy monomer, at least one olefin monomer forming a co-monomer mixture with the epoxy monomer and a catalytic amount of at least one palladium compound uniformly distributed in said co-monomer mixture to promote formation of the semi-interpenetrating polymer network under ambient conditions.Type: GrantFiled: August 17, 1999Date of Patent: March 12, 2002Assignee: 3M Innovative Properties CompanyInventors: Mark I. Wagner, Stephen D. Meyer