Abstract: A valve with permanent magnet(s) and electro-magnet coils magnetically coupled to the permanent magnet(s). The valve is positioned below an inlet for receiving media. The amount of media flow may be regulated by controlling the current to the coils for partial or full flow. With no power applied to the electro-magnet coils, the media flow is inhibited. Application of a current to the electro-magnet coils will block the flux in the pole pieces rendering the working gap free of magnetic flux and thus allowing media to freely flow. As it is used, the media may become magnetized, altering the flow properties and causing magnetized media to bridge across the working gap. A magnetic sensor detects the amount of flux in the working gap to provide a signal to a control system. The signal allows closed loop control of the coils as media becomes magnetized, allowing consistent flow properties during use.

Abstract: A method for regulating the flow of media that provides a valve having a first pole piece and a second pole piece that are separated by a working gap through which media may flow. The pole pieces direct a first magnetic field through the working gap. A coil generates a second magnetic field when electrical current is passed through the coil and that second magnetic field is capable of opposing the first magnetic field. The current in the coil is set at a first level that corresponds to a desired low rate of media through the working gap. The actual flow rate that results from the first duty cycle of current in the coil is compared to a desired flow rate and the current can be adjusted if the actual flow rate is different than the desired flow rate.

Abstract: A valve with permanent magnet(s) and electro-magnet coils magnetically coupled to the permanent magnet(s). The valve is positioned below an inlet for receiving media. The amount of media flow may be regulated by controlling the current to the coils for partial or full flow. With no power applied to the electro-magnet coils, the media flow is inhibited. Application of a current to the electro-magnet coils will block the flux in the pole pieces rendering the working gap free of magnetic flux and thus allowing media to freely flow. As it is used, the media may become magnetized, altering the flow properties and causing magnetized media to bridge across the working gap. A magnetic sensor detects the amount of flux in the working gap to provide a signal to a control system. The signal allows closed loop control of the coils as media becomes magnetized, allowing consistent flow properties during use.

Abstract: A flow sensor for use downstream from a particulate media dispensing device is provided having an inlet to receive particulate media and an outlet to dispense the media. The flow sensor has an inlet portion with a funnel to direct particulate media towards a central axis. An axially mounted flow director is located downstream from the funnel to direct the media outwards towards a sensor portion. A capacitive sensor located in the sensor portion surrounds the flow director to create an annular flow path to measure the amount of media that passes through sensor rings in the sensor.

Abstract: A shot peening flow rate control that is useful for non-ferrous shot peening media. The control has an inlet for receiving media and an orifice through which the media may pass that is in communication with the inlet. A valve selectively blocks the orifice. The valve has a spindle that is guided for axial movement between an open and closed position. The closed position blocks the orifice and the open position places the spindle spaced from the orifice to allow media to flow through the orifice. A flow sensor has a deflectable member that extends into a flow path of media leaving the orifice. In response to increasing or decreasing flow of the media through the flow path the deflectable member will deflect more or less. A sensing device measures the deflection in the deflectable member and generates an electrical signal that varies in response to deflection in the deflectable member.

Abstract: A shot peening flow rate control that is useful for non-ferrous shot peening media. The control has an inlet for receiving media and an orifice through which the media may pass that is in communication with the inlet. A valve selectively blocks the orifice. The valve has a spindle that is guided for axial movement between an open and closed position. The closed position blocks the orifice and the open position places the spindle spaced from the orifice to allow media to flow through the orifice. A flow sensor has a deflectable member that extends into a flow path of media leaving the orifice. In response to increasing or decreasing flow of the media through the flow path the deflectable member will deflect more or less. A sensing device measures the deflection in the deflectable member and generates an electrical signal that varies in response to deflection in the deflectable member.

Abstract: This disclosure relates to systems and methods that facilitate restricting operation of a client device to parent approved content.

Abstract: A device having a resistive memory element, a control device, a digit line and a sensing circuit. The sensing circuit is configured to sense a voltage correlative to a resistance state of the resistive memory element. The sensing circuit if further configured to sense the voltage correlative to the resistance state after a waiting period that is less than or equal to the product of a capacitance of a digit line and a total resistance of the control device.

Abstract: A device having a resistive memory element, a control device, a digit line and a sensing circuit. The sensing circuit is configured to sense a voltage correlative to a resistance state of the resistive memory element. The sensing circuit if further configured to sense the voltage correlative to the resistance state after a waiting period that is less than or equal to the product of a capacitance of a digit line and a total resistance of the control device.

Abstract: A resistive memory device requires a power supply having a reduced number of voltage taps and reduced power consumption. In accordance with one exemplary embodiment, one or more voltages used by a reference circuit which are normally supplied by different taps of a power supply are generated by corresponding power circuits. In accordance with a second exemplary embodiment, the power circuits are coupled to the bit lines and replace the reference circuit in a manner to improve sensing margin.

Abstract: A system having a memory cell. In certain embodiments, the memory cell includes a resistive memory element, an access transistor having a gate, a first terminal, and a second terminal, and a control transistor having a gate, a first terminal, and a second terminal. The first terminal of the access transistor may be coupled to the resistive memory element, and the gate of the access transistor may be coupled to the gate of the control transistor. Additionally, the first terminal of the control transistor may be coupled to the resistive memory element.

Abstract: A resistive memory device requires a power supply having a reduced number of voltage taps and reduced power consumption. In accordance with one exemplary embodiment, one or more voltages used by a reference circuit which are normally supplied by different taps of a power supply are generated by corresponding power circuits. In accordance with a second exemplary embodiment, the power circuits are coupled to the bit lines and replace the reference circuit in a manner to improve sensing margin.

Abstract: A system having a memory cell. In certain embodiments, the memory cell includes a resistive memory element, an access transistor having a gate, a first terminal, and a second terminal, and a control transistor having a gate, a first terminal, and a second terminal. The first terminal of the access transistor may be coupled to the resistive memory element, and the gate of the access transistor may be coupled to the gate of the control transistor. Additionally, the first terminal of the control transistor may be coupled to the resistive memory element.

Abstract: A system having a memory cell. In certain embodiments, the memory cell includes a resistive memory element, an access transistor having a gate, a first terminal, and a second terminal, and a control transistor having a gate, a first terminal, and a second terminal. The first terminal of the access transistor may be coupled to the resistive memory element, and the gate of the access transistor may be coupled to the gate of the control transistor. Additionally, the first terminal of the control transistor may be coupled to the resistive memory element.

Abstract: A resistive memory device requires a power supply having a reduced number of voltage taps and reduced power consumption. In accordance with one exemplary embodiment, one or more voltages used by a reference circuit which are normally supplied by different taps of a power supply are generated by corresponding power circuits. In accordance with a second exemplary embodiment, the power circuits are coupled to the bit lines and replace the reference circuit in a manner to improve sensing margin.

Abstract: A system having a memory cell. In certain embodiments, the memory cell includes a resistive memory element, an access transistor having a gate, a first terminal, and a second terminal, and a control transistor having a gate, a first terminal, and a second terminal. The first terminal of the access transistor may be coupled to the resistive memory element, and the gate of the access transistor may be coupled to the gate of the control transistor. Additionally, the first terminal of the control transistor may be coupled to the resistive memory element.

Abstract: A resistive memory device requires a power supply having a reduced number of voltage taps and reduced power consumption. In accordance with one exemplary embodiment, one or more voltages used by a reference circuit which are normally supplied by different taps of a power supply are generated by corresponding power circuits. In accordance with a second exemplary embodiment, the power circuits are coupled to the bit lines and replace the reference circuit in a manner to improve sensing margin.

Abstract: A resistive memory device requires a power supply having a reduced number of voltage taps and reduced power consumption. In accordance with one exemplary embodiment, one or more voltages used by a reference circuit which are normally supplied by different taps of a power supply are generated by corresponding power circuits. In accordance with a second exemplary embodiment, the power circuits are coupled to the bit lines and replace the reference circuit in a manner to improve sensing margin.

Abstract: A resistance variable memory device such as e.g., a PCRAM memory device, with either a 4T (transistor) or 2T memory cell configuration and either a dual cell plate or word line configuration. The device includes additional circuitry configured to write or erase addressed cells while keeping the voltage across non-addressed cells at approximately 0V. The device also includes circuitry that reads the addressed cells in a manner that increases the sensing window without causing the potential across the cell to be greater than approximately 200 mV. The device may also sense the state of its addressed cells closer in time to when the cells are accessed, in comparison to typical sensing techniques.