Patents by Inventor Mark J. Guttag

Mark J. Guttag has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Portable dosimeter
    Patent number: 8399858
    Abstract: Described is a portable dosimeter that includes a piece of optically stimulated luminescence material (OSLM) mounted in a dosimeter mount that is rotatably mounted in a cylindrical recess of a dosimeter housing.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: March 19, 2013
    Assignee: Landauer, Inc.
    Inventors: R. Craig Yoder, Mark J. Guttag
  • PORTABLE DOSIMETER
    Publication number: 20120061591
    Abstract: Described is a portable dosimeter that includes a piece of optically stimulated luminescence material (OSLM) mounted in a dosimeter mount that is rotatably mounted in a cylindrical recess of a dosimeter housing.
    Type: Application
    Filed: September 14, 2011
    Publication date: March 15, 2012
    Applicant: Landauer, Inc.
    Inventors: R. Craig YODER, Mark J. Guttag
  • Strongly textured atomic ridge nanowindows
    Patent number: 7259099
    Abstract: The present invention provides a MOSFET device comprising: a substrate including a plurality of atomic ridges, each of the atomic ridges including a semiconductor layer comprising Si and an dielectric layer comprising a Si compound; a plurality nanogrooves between the atomic ridges; at least one elongated molecule located in at least one of the nanogrooves; a porous gate layer located on top of the plurality of atomic ridges. The present invention also provides a membrane comprising: a substrate; and a plurality of nanowindows in the substrate and a method for forming nanowindows in a substrate.
    Type: Grant
    Filed: September 15, 2005
    Date of Patent: August 21, 2007
    Assignee: Starmega Corporation
    Inventors: Don L. Kendall, Mark J. Guttag
  • Strongly textured atomic ridge and dot Mosfets, sensors and filters
    Patent number: 6509619
    Abstract: The present invention provides a MOSFET device comprising: a substrate including a plurality of atomic ridges, each of the atomic ridges including a semiconductor layer comprising Si and an dielectric layer comprising a Si compound; a plurality nanogrooves between the atomic ridges; at least one elongated molecule located in at least one of the nanogrooves; a porous gate layer located on top of the plurality of atomic ridges. The present invention also provides a membrane comprising: a substrate; and a plurality of nanowindows in the substrate and a method for forming nanowindows in a substrate.
    Type: Grant
    Filed: September 8, 2000
    Date of Patent: January 21, 2003
    Assignee: StarMega Corporation
    Inventors: Don Kendall, Mark J. Guttag