Patents by Inventor Mark J. Hurley

Mark J. Hurley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Changing effective work function using ion implantation during dual work function metal gate integration
    Patent number: 9564505
    Abstract: Ion implantation to change an effective work function for dual work function metal gate integration is presented. One method may include forming a high dielectric constant (high-k) layer over a first-type field effect transistor (FET) region and a second-type FET region; forming a metal layer having a first effective work function compatible for a first-type FET over the first-type FET region and the second-type FET region; and changing the first effective work function to a second, different effective work function over the second-type FET region by implanting a species into the metal layer over the second-type FET region.
    Type: Grant
    Filed: April 17, 2014
    Date of Patent: February 7, 2017
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Michael P. Chudzik, Martin M. Frank, Herbert L. Ho, Mark J. Hurley, Rashmi Jha, Naim Moumen, Vijay Narayanan, Dae-Gyu Park, Vamsi K. Paruchuri
  • CHANGING EFFECTIVE WORK FUNCTION USING ION IMPLANTATION DURING DUAL WORK FUNCTION METAL GATE INTEGRATION
    Publication number: 20140225199
    Abstract: Ion implantation to change an effective work function for dual work function metal gate integration is presented. One method may include forming a high dielectric constant (high-k) layer over a first-type field effect transistor (FET) region and a second-type FET region; forming a metal layer having a first effective work function compatible for a first-type FET over the first-type FET region and the second-type FET region; and changing the first effective work function to a second, different effective work function over the second-type FET region by implanting a species into the metal layer over the second-type FET region.
    Type: Application
    Filed: April 17, 2014
    Publication date: August 14, 2014
    Applicant: International Business Machines Corporation
    Inventors: Michael P. Chudzik, Martin M. Frank, Herbert L. Ho, Mark J. Hurley, Rashmi Jha, Naim Moumen, Vijay Narayanan, Dae-Gyu Park, Vamsi K. Paruchuri
  • Changing effective work function using ion implantation during dual work function metal gate integration
    Patent number: 8753936
    Abstract: Ion implantation to change an effective work function for dual work function metal gate integration is presented. One method may include forming a high dielectric constant (high-k) layer over a first-type field effect transistor (FET) region and a second-type FET region; forming a metal layer having a first effective work function compatible for a first-type FET over the first-type FET region and the second-type FET region; and changing the first effective work function to a second, different effective work function over the second-type FET region by implanting a species into the metal layer over the second-type FET region.
    Type: Grant
    Filed: August 12, 2008
    Date of Patent: June 17, 2014
    Assignee: International Business Machines Corporation
    Inventors: Michael P. Chudzik, Martin M. Frank, Herbert L. Ho, Mark J. Hurley, Rashmi Jha, Naim Moumen, Vijay Narayanan, Dae-Gyu Park, Vamsi K. Paruchuri
  • CHANGING EFFECTIVE WORK FUNCTION USING ION IMPLANTATION DURING DUAL WORK FUNCTION METAL GATE INTEGRATION
    Publication number: 20100038725
    Abstract: Ion implantation to change an effective work function for dual work function metal gate integration is presented. One method may include forming a high dielectric constant (high-k) layer over a first-type field effect transistor (FET) region and a second-type FET region; forming a metal layer having a first effective work function compatible for a first-type FET over the first-type FET region and the second-type FET region; and changing the first effective work function to a second, different effective work function over the second-type FET region by implanting a species into the metal layer over the second-type FET region.
    Type: Application
    Filed: August 12, 2008
    Publication date: February 18, 2010
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Michael P. Chudzik, Martin M. Frank, Herbert L. Ho, Mark J. Hurley, Rashmi Jha, Naim Moumen, Vijay Narayanan, Dae-Gyu Park, Vamsi K. Paruchuri
  • Method of monitoring introduction of interfacial species
    Patent number: 7335969
    Abstract: A method for monitoring a nitridation process, including: (a) providing a semiconductor substrate; (b) forming a first dielectric layer on a top surface of the substrate; (c) introducing a quantity of interfacial species into the substrate; (d) removing the first dielectric layer; (e) forming a second dielectric layer on the top surface of the substrate; (f) measuring the density of interface traps between the substrate and the second dielectric layer; (g) providing a predetermined relationship between the quantity of the interfacial species and the density of the interface traps; and (h) determining the quantity of the interfacial species introduced based on the relationship.
    Type: Grant
    Filed: March 9, 2005
    Date of Patent: February 26, 2008
    Assignee: International Business Machines Corporation
    Inventors: Lance Genicola, Mark J. Hurley, Jeremy J. Kempisty, Paul D. Kirsch, Ravikumar Ramachandran, Suri Hedge
  • Method of monitoring introduction on interfacial species
    Patent number: 6929964
    Abstract: A method for monitoring a nitridation process, including: (a) providing a semiconductor substrate; (b) forming a first dielectric layer on a top surface of the substrate; (c) introducing a quantity of interfacial species into the substrate; (d) removing the first dielectric layer; (e) forming a second dielectric layer on the top surface of the substrate; (f) measuring the density of interface traps between the substrate and the second dielectric layer; (g) providing a predetermined relationship between the quantity of the interfacial species and the density of the interface traps; and (h) determining the quantity of the interfacial species introduced based on the relationship.
    Type: Grant
    Filed: September 17, 2003
    Date of Patent: August 16, 2005
    Assignee: International Business Machines Corporation
    Inventors: Lance Genicola, Mark J. Hurley, Jeremy J. Kempisty, Paul D. Kirsch, Ravikumar Ramachandran, Suri Hedge