Abstract: A method of forming an epitaxial SiC film on SiC substrates in a warm wall CVD system, wherein the susceptor is actively heated and the ceiling and sidewall are not actively heated, but are allowed to be indirectly heated by the susceptor. The method includes a first process of reaction cell preparation and a second process of epitaxial film growth. The epitaxial growth is performed by flowing parallel to the surface of the wafers a gas mixture of hydrogen, silicon and carbon gases, at total gas velocity in a range 120 to 250 cm/sec.

Abstract: A method of forming an epitaxial SiC film on SiC substrates in a warm wall CVD system, wherein the susceptor is actively heated and the ceiling and sidewall are not actively heated, but are allowed to be indirectly heated by the susceptor. The method includes a first process of reaction cell preparation and a second process of epitaxial film growth. The epitaxial growth is performed by flowing parallel to the surface of the wafers a gas mixture of hydrogen, silicon and carbon gases, at total gas velocity in a range 120 to 250 cm/sec.

Abstract: A method and process for forming a barrier layer on a flexible substrate are provided. A continuous roll-to-roll method includes providing a substrate to a processing chamber using at least one roller configured to guide the substrate through the processing chamber. The process includes depositing a barrier layer adjacent the substrate by exposing at least one portion of the substrate that is within the processing chamber to plasma comprising a silicon-and-carbon containing precursor gas. Also provided is a coated flexible substrate comprising a barrier layer based on the structural unit SiC:H, or SiOC:H, or SiOCN:H. The barrier layer possesses high density and low porosity. The barrier layer exhibits low water vapor transmission rate (WVTR) in the range of 10?2-10?4 g·m?2d?1 and is appropriate for very low permeability applications.

Abstract: Disclosed are powders containing silica precursors having metals deposited on their surface. The powders are produced by vacuum evaporation of the metal onto the surface of the powder. These powders are useful for forming colloidal dispersion, gels and ceramics with metals dispersed therein.

Abstract: A method of forming crystalline silicon carbide films is disclosed. The method comprises a chemical vapor deposition process in which a substrate is heated to a temperature above about 600.degree. C. in the presence of trimethylsilane gas.

Abstract: The present invention relates to a low temperature method of forming silica-containing ceramic coatings on substrates. The method involves applying a coating comprising a silicon hydride containing resin on a substrate and heating the coated substrate under an environment comprising nitrous oxide at a temperature sufficient to convert the resin to the silica-containing ceramic coating. This method is especially valuable for forming protective and dielectric coatings on electronic devices.

Abstract: A method of forming crystalline silicon carbide films is disclosed. The method comprises a chemical vapor deposition process in which a substrate is heated to a temperature above about 600.degree. C. in the presence of a silicon containing cyclobutane gas.

Abstract: The present invention relates to a method of forming a homogeneous ceramic coating on a substrate. The method comprises depositing a preceramic coating on a substrate and then heating the substrate while directing a stream of cooling gas at the surface of the preceramic coating such that a temperature gradient is developed in the coating. This temperature gradient is created in such a way that the preceramic material near the substrate is converted to its ceramic form while the preceramic material near the surface of the coating is deterred from conversion. The temperature gradient is then decreased over time such that all of the preceramic material ceramifies from the substrate outward to form a homogeneous coating on the substrate.