Patents by Inventor Mark J. Saly

Mark J. Saly has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11942330
    Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.
    Type: Grant
    Filed: June 9, 2022
    Date of Patent: March 26, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Feng Q. Liu, Lisa J. Enman, Lakmal C. Kalutarage, Mark J. Saly
  • Patent number: 11932938
    Abstract: Disclosed is a coated chamber component comprising a body having a reduced metal surface such that the reduced metal surface has less metal oxide as compared to an amount of metal oxide on a metal surface that has not been reduced. The metal surface may be reduced by pulsing a reducing alcohol thereon. The reduced metal surface may be coated with a corrosion resistant film that may be deposited onto the reduced metal surface by a dry atomic layer deposition process.
    Type: Grant
    Filed: July 22, 2020
    Date of Patent: March 19, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Lisa J. Enman, Steven D. Marcus, Mark J. Saly, Lei Zhou
  • Publication number: 20240003003
    Abstract: Disclosed is a coated chamber component comprising a body having a reduced metal surface such that the reduced metal surface has less metal oxide as compared to an amount of metal oxide on a metal surface that has not been reduced. The metal surface may be reduced by pulsing a reducing alcohol thereon. The reduced metal surface may be coated with a corrosion resistant film that may be deposited onto the reduced metal surface by a dry atomic layer deposition process.
    Type: Application
    Filed: September 14, 2023
    Publication date: January 4, 2024
    Inventors: Lisa J. Enman, Steven D. Marcus, Mark J. Saly, Lei Zhou
  • Publication number: 20230243068
    Abstract: Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(R3-vHvSi)—(R2-wHwSi)n]xPHyR?z, where each instance of R and each instance of R? are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x+y+z=3.
    Type: Application
    Filed: April 5, 2023
    Publication date: August 3, 2023
    Inventors: Errol Antonio C. SANCHEZ, Mark J. SALY, Schubert CHU, Abhishek DUBE, Srividya NATARAJAN
  • Patent number: 11649560
    Abstract: Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(R3-vHvSi)—(R2-wHwSi)n]xPHyR?z, where each instance of R and each instance of R? are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x+y+z=3.
    Type: Grant
    Filed: August 2, 2019
    Date of Patent: May 16, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Errol Antonio C Sanchez, Mark J. Saly, Schubert Chu, Abhishek Dube, Srividya Natarajan
  • Publication number: 20230002878
    Abstract: Disclosed herein is a method for forming metal-oxides in the photoresist to improve profile control. The method includes infiltrating a metal oxide in a photoresist layer by pressurizing a methyl-containing material in a processing environment proximate a film stack. The film stack includes the photoresist layer, the photoresist layer being disposed on top of and in contact with an underlayer. The underlayer disposed on top of a substrate. The method includes etching the film stack including the photoresist layer implanted with the metal oxide.
    Type: Application
    Filed: May 10, 2022
    Publication date: January 5, 2023
    Inventors: Nancy FUNG, Mark J. SALY
  • Patent number: 11536708
    Abstract: Embodiments of the present disclosure provide dual pore sensors and methods for producing these dual pore sensors. The method includes forming a film stack, where the film stack contains two silicon layers and two membrane layers, and then etching the film stack to produce a channel extending therethrough and having two reservoirs and two nanopores. The method also includes depositing a oxide layer on inner surfaces of the reservoirs and nanopores, depositing a dielectric layer on the oxide layer, and forming a metal contact extending through a portion of the stack. The method further includes etching the dielectric layers to form wells, etching the first silicon layer to reveal the protective oxide layer deposited on the inner surfaces of a reservoir, and etching the protective oxide layer deposited on the inner surfaces of the reservoirs and the nanopores.
    Type: Grant
    Filed: January 9, 2020
    Date of Patent: December 27, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Mark J. Saly, Keenan Navarre Woods, Joseph R. Johnson, Bhaskar Jyoti Bhuyan, William J. Durand, Michael Chudzik, Raghav Sreenivasan, Roger Quon
  • Publication number: 20220384188
    Abstract: Exemplary deposition methods may include delivering a ruthenium-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. At least one of the ruthenium-containing precursor or the hydrogen-containing precursor may include carbon. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a ruthenium-and-carbon material on a substrate disposed within the processing region of the semiconductor processing chamber.
    Type: Application
    Filed: May 25, 2021
    Publication date: December 1, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Eswaranand Venkatasubramanian, Bhaskar Jyoti Bhuyan, Mark J. Saly, Abhijit Basu Mallick
  • Publication number: 20220301883
    Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.
    Type: Application
    Filed: June 9, 2022
    Publication date: September 22, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Feng Q. Liu, Lisa J. Enman, Lakmal C. Kalutarage, Mark J. Saly
  • Patent number: 11398388
    Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include selectively etching gallium oxide relative to gallium nitride. The method may include flowing a reagent in a substrate processing region housing the semiconductor substrate. The reagent may include at least one of chloride and bromide. The method may further include contacting an exposed region of gallium oxide with the at least one of chloride and bromide from the reagent to form a gallium-containing gas. The gallium-containing gas may be removed by purging the substrate processing region with an inert gas. The method includes recessing a surface of the gallium oxide. The method may include repeated cycles to achieve a desired depth.
    Type: Grant
    Filed: September 8, 2020
    Date of Patent: July 26, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Feng Q. Liu, Lisa J. Enman, Lakmal C. Kalutarage, Mark J. Saly
  • Publication number: 20220076960
    Abstract: Exemplary methods of etching gallium oxide from a semiconductor substrate may include selectively etching gallium oxide relative to gallium nitride. The method may include flowing a reagent in a substrate processing region housing the semiconductor substrate. The reagent may include at least one of chloride and bromide. The method may further include contacting an exposed region of gallium oxide with the at least one of chloride and bromide from the reagent to form a gallium-containing gas. The gallium-containing gas may be removed by purging the substrate processing region with an inert gas. The method includes recessing a surface of the gallium oxide. The method may include repeated cycles to achieve a desired depth.
    Type: Application
    Filed: September 8, 2020
    Publication date: March 10, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Feng Q. Liu, Lisa J. Enman, Lakmal C. Kalutarage, Mark J. Saly
  • Patent number: 11107674
    Abstract: Embodiments described and discussed herein provide methods for depositing silicon nitride materials by vapor deposition, such as by flowable chemical vapor deposition (FCVD), as well as for utilizing new silicon-nitrogen precursors for such deposition processes. The silicon nitride materials are deposited on substrates for gap fill applications, such as filling trenches formed in the substrate surfaces. In one or more embodiments, the method for depositing a silicon nitride film includes introducing one or more silicon-nitrogen precursors and one or more plasma-activated co-reactants into a processing chamber, producing a plasma within the processing chamber, and reacting the silicon-nitrogen precursor and the plasma-activated co-reactant in the plasma to produce a flowable silicon nitride material on a substrate within the processing chamber. The method also includes treating the flowable silicon nitride material to produce a solid silicon nitride material on the substrate.
    Type: Grant
    Filed: November 11, 2019
    Date of Patent: August 31, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Lakmal C. Kalutarage, Mark J. Saly, Praket Prakash Jha, Jingmei Liang
  • Publication number: 20210215664
    Abstract: Embodiments of the present disclosure provide dual pore sensors and methods for producing these dual pore sensors. The method includes forming a film stack, where the film stack contains two silicon layers and two membrane layers, and then etching the film stack to produce a channel extending therethrough and having two reservoirs and two nanopores. The method also includes depositing a oxide layer on inner surfaces of the reservoirs and nanopores, depositing a dielectric layer on the oxide layer, and forming a metal contact extending through a portion of the stack. The method further includes etching the dielectric layers to form wells, etching the first silicon layer to reveal the protective oxide layer deposited on the inner surfaces of a reservoir, and etching the protective oxide layer deposited on the inner surfaces of the reservoirs and the nanopores.
    Type: Application
    Filed: January 9, 2020
    Publication date: July 15, 2021
    Inventors: Mark J. SALY, Keenan Navarre WOODS, Joseph R. JOHNSON, Bhaskar Jyoti BHUYAN, William J. DURAND, Michael CHUDZIK, Raghav SREENIVASAN, Roger QUON
  • Publication number: 20210032745
    Abstract: Disclosed is a coated chamber component comprising a body having a reduced metal surface such that the reduced metal surface has less metal oxide as compared to an amount of metal oxide on a metal surface that has not been reduced. The metal surface may be reduced by pulsing a reducing alcohol thereon. The reduced metal surface may be coated with a corrosion resistant film that may be deposited onto the reduced metal surface by a dry atomic layer deposition process.
    Type: Application
    Filed: July 22, 2020
    Publication date: February 4, 2021
    Inventors: Lisa J. Enman, Steven D. Marcus, Mark J. Saly, Lei Zhou
  • Publication number: 20200399784
    Abstract: Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(R3-vHvSi)—(R2-wHwSi)n]xPHyR?z, where each instance of R and each instance of R? are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x+y+z=3.
    Type: Application
    Filed: August 2, 2019
    Publication date: December 24, 2020
    Inventors: Errol Antonio C Sanchez, Mark J. Saly, Schubert Chu, Abhishek Dube, Srividya Natarajan
  • Publication number: 20200243323
    Abstract: Embodiments described and discussed herein provide methods for depositing silicon nitride materials by vapor deposition, such as by flowable chemical vapor deposition (FCVD), as well as for utilizing new silicon-nitrogen precursors for such deposition processes. The silicon nitride materials are deposited on substrates for gap fill applications, such as filling trenches formed in the substrate surfaces. In one or more embodiments, the method for depositing a silicon nitride film includes introducing one or more silicon-nitrogen precursors and one or more plasma-activated co-reactants into a processing chamber, producing a plasma within the processing chamber, and reacting the silicon-nitrogen precursor and the plasma-activated co-reactant in the plasma to produce a flowable silicon nitride material on a substrate within the processing chamber. The method also includes treating the flowable silicon nitride material to produce a solid silicon nitride material on the substrate.
    Type: Application
    Filed: November 11, 2019
    Publication date: July 30, 2020
    Inventors: Lakmal C. KALUTARAGE, Mark J. SALY, Praket Prakash JHA, Jingmei LIANG
  • Publication number: 20140209026
    Abstract: An apparatus deposits a film on a substrate including a reaction chamber arranged on a substrate support. An inlet port delivers gas phase reactants to the reaction chamber. A plasma generator provides plasma to the reaction chamber. A controller is configured to flow a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, tris(dimethylamido)silylazide, and bis(tert-butylhydrazido)diethyl silane. The silicon-containing reactant is introduced in vapor phase into the reaction chamber. The controller flows a second reactant in vapor phase into the reaction chamber.
    Type: Application
    Filed: April 2, 2014
    Publication date: July 31, 2014
    Applicant: Novellus Systems, Inc.
    Inventors: Adrien LaVoie, Mark J. Saly, Daniel Moser, Rajesh Odedra, Ravi Konjolia
  • Patent number: 8728955
    Abstract: A method of depositing a film on a substrate surface includes providing a substrate in a reaction chamber; selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido)silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane; introducing the silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto the substrate surface; introducing a second reactant in vapor phase into the reaction chamber while the silicon-containing reactant is adsorbed on the substrate surface, and wherein the second reactant is introduced without first sweeping the silicon-containing reactant out of the reaction chamber; and exposing the substrate surface to plasma to drive a reaction between the silicon-containing reactant and
    Type: Grant
    Filed: March 1, 2012
    Date of Patent: May 20, 2014
    Assignee: Novellus Systems, Inc.
    Inventors: Adrien LaVoie, Mark J. Saly, Daniel Moser, Rajesh Odedra, Ravi Konjolia
  • Publication number: 20130210241
    Abstract: A method of depositing a film on a substrate surface includes providing a substrate in a reaction chamber; selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido) silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane; introducing the silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto the substrate surface; introducing a second reactant in vapor phase into the reaction chamber while the silicon-containing reactant is adsorbed on the substrate surface, and wherein the second reactant is introduced without first sweeping the silicon-containing reactant out of the reaction chamber; and exposing the substrate surface to plasma to drive a reaction between the silicon-containing reactant and
    Type: Application
    Filed: March 1, 2012
    Publication date: August 15, 2013
    Applicant: Novellus Systems Inc.
    Inventors: Adrien LaVoie, Mark J. Saly, Daniel Moser, Rajesh Odedra, Ravi Kanjolia