Patents by Inventor Mark J. Winter

Mark J. Winter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10388365
    Abstract: A circuit and method performs a write assist for a memory cell (e.g., a static random access memory cell (SRAM)). The method includes providing a lower supply voltage signal to a voltage supply node of the memory cell using a capacitor. The lower supply voltage signal is lower in voltage level than a supply voltage signal. The method further includes lowering a common signal provided to a write driver using the capacitor.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: August 20, 2019
    Assignee: Avago Technologies International Sales Pte. Limited
    Inventors: Yifei Zhang, Mark J. Winter
  • Publication number: 20180218769
    Abstract: A circuit and method performs a write assist for a memory cell (e.g., a static random access memory cell (SRAM)). The method includes providing a lower supply voltage signal to a voltage supply node of the memory cell using a capacitor. The lower supply voltage signal is lower in voltage level than a supply voltage signal. The method further includes lowering a common signal provided to a write driver using the capacitor.
    Type: Application
    Filed: March 29, 2018
    Publication date: August 2, 2018
    Applicant: Avago Technologies General IP (Singapore) Pte. Ltd .
    Inventors: Yifei Zhang, Mark J. Winter
  • Patent number: 9940994
    Abstract: A circuit and method performs a write assist for a memory cell (e.g., a static random access memory cell (SRAM)). The method includes providing a lower supply voltage signal to a voltage supply node of the memory cell using a capacitor. The lower supply voltage signal is lower in voltage level than a supply voltage signal. The method further includes lowering a common signal provided to a write driver using the capacitor.
    Type: Grant
    Filed: April 21, 2016
    Date of Patent: April 10, 2018
    Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
    Inventors: Yifei Zhang, Mark J. Winter
  • Publication number: 20170294223
    Abstract: A circuit and method performs a write assist for a memory cell (e.g., a static random access memory cell (SRAM)). The method includes providing a lower supply voltage signal to a voltage supply node of the memory cell using a capacitor. The lower supply voltage signal is lower in voltage level than a supply voltage signal. The method further includes lowering a common signal provided to a write driver using the capacitor.
    Type: Application
    Filed: April 21, 2016
    Publication date: October 12, 2017
    Applicant: BROADCOM CORPORATION
    Inventors: Yifei Zhang, Mark J. Winter
  • Patent number: 5951033
    Abstract: A friction damping system for use in a system having at least one of a pair of sliding elements. The friction damping system has a friction producing element positioned between the sliding elements such that at least one of the sliding elements rubs against the friction producing element to generate friction and thereby damp the relative sliding movement of the sliding elements. The friction producing element may be provided in a housing that is fixed to one of the sliding elements with the friction producing element facing and contacting the other sliding element. The friction damping system may further be designed to provide directional sensitivity such that damping of movement of the sliding elements in a first direction is greater than damping of movement in a second direction opposite the first direction. Such directional sensitivity may be accomplished by angling one of the surfaces against which the friction producing element moves during sliding movement of the sliding elements.
    Type: Grant
    Filed: May 26, 1998
    Date of Patent: September 14, 1999
    Assignee: Rockshox, Inc.
    Inventors: Mark J. Winter, Peter G. Turner