Patents by Inventor Mark James Harrison

Mark James Harrison has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Solder metallization stack and methods of formation thereof
    Patent number: 10573611
    Abstract: A semiconductor device includes a contact metal layer disposed over a semiconductor surface of a substrate, a diffusion barrier layer disposed over the contact metal layer, an inert layer disposed over the diffusion barrier layer, and a solder layer disposed over inert layer.
    Type: Grant
    Filed: October 17, 2018
    Date of Patent: February 25, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Kamil Karlovsky, Evelyn Napetschnig, Michael Ehmann, Mark James Harrison, Anton Pugatschow
  • Solder Metallization Stack and Methods of Formation Thereof
    Publication number: 20190051624
    Abstract: A semiconductor device includes a contact metal layer disposed over a semiconductor surface of a substrate, a diffusion barrier layer disposed over the contact metal layer, an inert layer disposed over the diffusion barrier layer, and a solder layer disposed over inert layer.
    Type: Application
    Filed: October 17, 2018
    Publication date: February 14, 2019
    Inventors: Kamil Karlovsky, Evelyn Napetschnig, Michael Ehmann, Mark James Harrison, Anton Pugatschow
  • Contacts for semiconductor devices and methods of forming thereof
    Patent number: 9824972
    Abstract: A method for a method of forming a semiconductor device includes providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface. The method further includes forming a first metal layer having a first metal over the bottom surface of the semiconductor substrate. The first metal layer is formed by depositing an adhesion promoter followed by depositing the first metal.
    Type: Grant
    Filed: December 19, 2016
    Date of Patent: November 21, 2017
    Assignee: Infineon Technologies AG
    Inventors: Mark James Harrison, Martin Sporn
  • Contacts for Semiconductor Devices and Methods of Forming Thereof
    Publication number: 20170098614
    Abstract: A method for a method of forming a semiconductor device includes providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface. The method further includes forming a first metal layer having a first metal over the bottom surface of the semiconductor substrate. The first metal layer is formed by depositing an adhesion promoter followed by depositing the first metal.
    Type: Application
    Filed: December 19, 2016
    Publication date: April 6, 2017
    Inventors: Mark James Harrison, Martin Sporn
  • Contacts for semiconductor devices and methods of forming thereof
    Patent number: 9553016
    Abstract: A method for a method of forming a semiconductor device includes providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface. The method further includes forming a first metal layer having a first metal over the bottom surface of the semiconductor substrate. The first metal layer is formed by depositing an adhesion promoter followed by depositing the first metal.
    Type: Grant
    Filed: July 7, 2014
    Date of Patent: January 24, 2017
    Assignee: Infineon Technologies AG
    Inventors: Mark James Harrison, Martin Sporn
  • Contacts for Semiconductor Devices and Methods of Forming Thereof
    Publication number: 20160005647
    Abstract: A method for a method of forming a semiconductor device includes providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface. The method further includes forming a first metal layer having a first metal over the bottom surface of the semiconductor substrate. The first metal layer is formed by depositing an adhesion promoter followed by depositing the first metal.
    Type: Application
    Filed: July 7, 2014
    Publication date: January 7, 2016
    Inventors: Mark James Harrison, Martin Sporn