Abstract: An air mixing device mitigates temperature stratification between two incoming air streams by creation of turbulent airflow through an arrangement of channels in the device. The device also provides selective passage of air for incoming airstreams to achieve functionality for damper control typically associated with separate inlet dampers. A slotted cover plate is mounted to a downstream face of the device. The slots are disposed over the channels to determine areas through which airstreams may pass, such as return air and outdoor air introduced into an air handling unit. A method provides for selectively controlled airflow through the device so effective mixing occurs along with an economizer function to control separate airstreams such as outside air and return air. The slotted cover plate is actuated to control airflow in which flow of one airstream through the device increases as the flow of the other airstream is proportionately decreased.

Abstract: An air mixing device mitigates temperature stratification between two incoming air streams by creation of turbulent airflow through an arrangement of channels in the device. The device also provides selective passage of air for incoming airstreams to achieve functionality for damper control typically associated with separate inlet dampers. A method provides for selectively controlled airflow through the device so effective mixing occurs along with an economizer function to control separate airstreams such as outside air and return air. Existing dampers may be integrated with the air mixing device to control airflow in which flow of one airstream through the device increases as the flow of the other airstream is proportionately decreased. A minimum outside air duct can be incorporated in the mixing device to efficiently satisfy building code requirements regarding monitoring and recording of outside air input to air handling units.

Abstract: An air mixing device mitigates temperature stratification between two incoming air streams by creation of turbulent airflow through an arrangement of channels in the device. The device also provides selective passage of air for incoming airstreams to achieve functionality for damper control typically associated with separate inlet dampers. Static mixing plates may be employed to affect desired mixing through the device. A method provides for selectively controlled airflow through the device so effective mixing occurs along with an economizer function to control separate airstreams such as outside air and return air. Existing dampers may be integrated with the air mixing device to control airflow in which flow of one airstream through the device increases as the flow of the other airstream is proportionately decreased.

Abstract: An air mixing device mitigates temperature stratification between two incoming air streams by creation of turbulent airflow through an arrangement of channels in the device. The device also provides selective passage of air for incoming airstreams to achieve functionality for damper control typically associated with separate inlet dampers. A method provides for selectively controlled airflow through the device so effective mixing occurs along with an economizer function to control separate airstreams such as outside air and return air. Existing dampers may be integrated with the air mixing device to control airflow in which flow of one airstream through the device increases as the flow of the other airstream is proportionately decreased. A minimum outside air duct can be incorporated in the mixing device to efficiently satisfy building code requirements regarding monitoring and recording of outside air input to air handling units.

Abstract: An air mixing device mitigates temperature stratification between two incoming air streams by creation of turbulent airflow through an arrangement of channels in the device. The device also provides selective passage of air for incoming airstreams to achieve functionality for damper control typically associated with separate inlet dampers. A slotted cover plate is mounted to a downstream face of the device. The slots are disposed over the channels to determine areas through which airstreams may pass, such as return air and outdoor air introduced into an air handling unit. A method provides for selectively controlled airflow through the device so effective mixing occurs along with an economizer function to control separate airstreams such as outside air and return air. The slotted cover plate is actuated to control airflow in which flow of one airstream through the device increases as the flow of the other airstream is proportionately decreased.

Abstract: An air mixing device mitigates temperature stratification between two incoming air streams by creation of turbulent airflow through an arrangement of channels in the device. The device also provides selective passage of air for incoming airstreams to achieve functionality for damper control typically associated with separate inlet dampers. Static mixing plates may be employed to affect desired mixing through the device. A method provides for selectively controlled airflow through the device so effective mixing occurs along with an economizer function to control separate airstreams such as outside air and return air. Existing dampers may be integrated with the air mixing device to control airflow in which flow of one airstream through the device increases as the flow of the other airstream is proportionately decreased.

Abstract: A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented.

Abstract: A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented.

Abstract: A method for vapor deposition of a sublimated source material, such as CdTe, onto substrates in a continuous, non-stop manner through the apparatus is provided. The sublimated source material moves through a distribution plate and deposits onto the upper surface of the substrates as they are conveyed through the deposition area. The substrates move into and out of the deposition area through entry and exit slots that are defined by transversely extending entrance and exit seals. The seals are disposed at a gap distance above the upper surface of the substrates that is less than the distance or spacing between the upper surface of the substrates and the distribution plate. The seals have a ratio of longitudinal length (in the direction of conveyance of the substrates) to gap distance of from about 10:1 to about 100:1.

Abstract: Thin film photovoltaic devices that include a transparent substrate; a transparent conductive oxide layer on the transparent substrate; a n-type window layer on the transparent conductive oxide layer; a p-type absorber layer on the n-type window layer; and, a back contact on the p-type absorber layer are provided. The p-type absorber layer comprises cadmium telluride, and forms a photovoltaic junction with the n-type window layer. Generally, the p-type absorber layer defines a plurality of finger structures protruding from the p-type absorber layer into the back contact. The finger structures can have an aspect ratio of about 1 or greater and/or can have a height that is about 20% to about 200% of the thickness of the p-type absorber layer. Methods of forming such finger structures protruding from a back surface of the p-type absorber layer are also provided.

Abstract: A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented.

Abstract: Vapor deposition apparatus for forming stacked thin films on discrete photovoltaic module substrates conveyed in a continuous non-stop manner through the apparatus are provided. The apparatus includes a first sublimation compartment positioned over a first deposition area of said apparatus, a second sublimation compartment positioned over a second deposition area of said apparatus, and an internal divider positioned therebetween and defining a middle seal member. An actuator is attached to the internal divider and is configured to move the internal divider to control intermixing of first source material vapors and second source material vapors within the first deposition area and the second deposition area. Methods are also generally provided for depositing stacked thin films on a substrate.

Abstract: Thin film photovoltaic devices that include a transparent substrate; a transparent conductive oxide layer on the transparent substrate; a n-type window layer on the transparent conductive oxide layer; a p-type absorber layer on the n-type window layer; and, a back contact on the p-type absorber layer are provided. The p-type absorber layer comprises cadmium telluride, and forms a photovoltaic junction with the n-type window layer. Generally, the p-type absorber layer defines a plurality of finger structures protruding from the p-type absorber layer into the back contact. The finger structures can have an aspect ratio of about 1 or greater and/or can have a height that is about 20% to about 200% of the thickness of the p-type absorber layer. Methods of forming such finger structures protruding from a back surface of the p-type absorber layer are also provided.

Abstract: Vapor deposition apparatus for forming stacked thin films on discrete photovoltaic module substrates conveyed in a continuous non-stop manner through the apparatus are provided. The apparatus includes a first sublimation compartment positioned over a first deposition area of said apparatus, a second sublimation compartment positioned over a second deposition area of said apparatus, and an internal divider positioned therebetween and defining a middle seal member. An actuator is attached to the internal divider and is configured to move the internal divider to control intermixing of first source material vapors and second source material vapors within the first deposition area and the second deposition area. Methods are also generally provided for depositing stacked thin films on a substrate.

Abstract: A method for making a photovoltaic device is presented. The method includes steps of disposing a window layer on a substrate and disposing an absorber layer on the window layer. Disposing the window layer, the absorber layer, or both layers includes introducing a source material into a deposition zone, wherein the source material comprises oxygen and a constituent of the window layer, of the absorber layer or of both layers. The method further includes step of depositing a film that comprises the constituent and oxygen.

Abstract: A method of processing a semiconductor assembly is presented. The method includes fabricating a photovoltaic module including a semiconductor assembly. The fabrication step includes performing an efficiency enhancement treatment on the semiconductor assembly, wherein the efficiency enhancement treatment includes light soaking the semiconductor assembly, and heating the semiconductor assembly. The semiconductor assembly includes a window layer having an average thickness less than about 80 nanometers, wherein the window layer includes cadmium and sulfur. A related system is also presented.

Abstract: Process and apparatus are generally provided for forming a thin film photovoltaic device. In one particular embodiment, the process includes: depositing a photovoltaic absorber layer on a glass substrate; heating the glass substrate to an anneal temperature; and quenching the glass substrate to cool the glass substrate to a quenched temperature in less than 10 seconds. The quenched temperature can be about 85° C. to about 200° C. less than the anneal temperature. The quenching atmosphere can have a quenching pressure of about 1 torr or more and can include an inert gas.

Abstract: Cylindrical sputtering targets are provided. The cylindrical sputtering target can include a tubular member having a length in a longitudinal direction and defining a tube surface. A source material is positioned about the tube surface of the tubular member and forms a sputtering surface about the tubular member. The source material generally includes a plurality of first areas and a plurality of second areas, each first area comprising a first compound and each second area comprising a second compound that is different than the first compound.

Abstract: Methods for forming a thin film layer on a substrate are provided. The method can include: rotating a cylindrical target about a center axis; ejecting atoms from the sputtering surface with a plasma; transporting a substrate across the plasma at a substantially consistent speed; and depositing the atoms ejected from the sputtering surface onto the substrate to form a thin film layer. The cylindrical target generally includes a source material forming a sputtering surface about the cylindrical target, with the source material having a plurality of first areas and a plurality of second areas. Each first area includes a first compound, and each second area includes a second compound, while the first compound is different than the second compound.

Abstract: A system for vapor deposition of a thin film layer on a photovoltaic module substrate is provided. The system includes a vacuum chamber having a pre-heat section, a vapor deposition apparatus, and a cool-down section; and a conveyor system operably disposed within said vacuum chamber and configured for conveying the substrates in a serial arrangement from said pre-heat section and through said vapor deposition apparatus at a controlled constant linear speed. The vapor deposition apparatus is configured for depositing a thin film of a sublimed source material onto an upper surface of the substrates as the substrates are continuously conveyed by said conveyor system through said vapor deposition apparatus.