Patents by Inventor Mark John Keevers

Mark John Keevers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for hydrogenation of thin film silicon on glass
    Patent number: 8039051
    Abstract: A method and apparatus is provided for hydrogenation of a target, such as a polycrystalline silicon film on a glass substrate, by using an atomic hydrogen source. The target is subjected to intermittent exposure of the atomic hydrogen field of the source until at least one area of the target has been subjected to the hydrogen field for a predetermined minimum period of time. The processing area of the source established by its atomic hydrogen field is smaller than the target, and after the target is moved into the high temperature processing zone it is translated within the high temperature processing zone to intermittently process successive areas of the target until the entire target has been processed for a predetermined minimum period of time. After the entire target has been processed, the target is cooled to a predetermined lower temperature while still intermittently subjecting the target to atomic hydrogen.
    Type: Grant
    Filed: June 2, 2006
    Date of Patent: October 18, 2011
    Assignee: CSG Solar AG
    Inventors: Mark John Keevers, Adrian Bruce Turner
  • Method and Apparatus For Hydrogenation of Thin Film Silicon on Glass
    Publication number: 20080199612
    Abstract: A method and apparatus is provided for hydrogenation of a target, such as a polycrystalline silicon film on a glass substrate, by using an atomic hydrogen source. The target is subjected to intermittent exposure of the atomic hydrogen field of the source until at least one area of the target has been subjected to the hydrogen field for a predetermined minimum period of time. The processing area of the source established by its atomic hydrogen field is smaller than the target, and after the target is moved into the high temperature processing zone it is translated within the high temperature processing zone to intermittently process successive areas of the target until the entire target has been processed for a predetermined minimum period of time. After the entire target has been processed, the target is cooled to a predetermined lower temperature while still intermittently subjecting the target to atomic hydrogen.
    Type: Application
    Filed: June 2, 2006
    Publication date: August 21, 2008
    Inventors: Mark John Keevers, Adrian Bruce Turner