Patents by Inventor Mark JUANITAS

Mark JUANITAS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9842857
    Abstract: A method of manufacturing a semiconductor structure includes forming a stack of alternating layers comprising insulating layers and spacer material layers over a semiconductor substrate, forming a memory opening through the stack, forming an aluminum oxide layer having a horizontal portion at a bottom of the memory opening and a vertical portion at least over a sidewall of the memory opening, where the horizontal portion differs from the vertical portion by at least one of structure or composition, and selectively etching the horizontal portion selective to the vertical portion.
    Type: Grant
    Filed: February 23, 2017
    Date of Patent: December 12, 2017
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Rahul Sharangpani, Sateesh Koka, Raghuveer S. Makala, Srikanth Ranganathan, Mark Juanitas, Johann Alsmeier
  • Publication number: 20170162597
    Abstract: A method of manufacturing a semiconductor structure includes forming a stack of alternating layers comprising insulating layers and spacer material layers over a semiconductor substrate, forming a memory opening through the stack, forming an aluminum oxide layer having a horizontal portion at a bottom of the memory opening and a vertical portion at least over a sidewall of the memory opening, where the horizontal portion differs from the vertical portion by at least one of structure or composition, and selectively etching the horizontal portion selective to the vertical portion.
    Type: Application
    Filed: February 23, 2017
    Publication date: June 8, 2017
    Inventors: Rahul Sharangpani, Sateesh Koka, Raghuveer S. Makala, Srikanth Ranganathan, Mark Juanitas, Johann Alsmeier
  • Patent number: 9613977
    Abstract: A method of manufacturing a semiconductor structure includes forming a stack of alternating layers comprising insulating layers and spacer material layers over a semiconductor substrate, forming a memory opening through the stack, forming an aluminum oxide layer having a horizontal portion at a bottom of the memory opening and a vertical portion at least over a sidewall of the memory opening, where the horizontal portion differs from the vertical portion by at least one of structure or composition, and selectively etching the horizontal portion selective to the vertical portion.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: April 4, 2017
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Rahul Sharangpani, Sateesh Koka, Raghuveer S. Makala, Srikanth Ranganathan, Mark Juanitas, Johann Alsmeier
  • Publication number: 20160379989
    Abstract: A method of manufacturing a semiconductor structure includes forming a stack of alternating layers comprising insulating layers and spacer material layers over a semiconductor substrate, forming a memory opening through the stack, forming an aluminum oxide layer having a horizontal portion at a bottom of the memory opening and a vertical portion at least over a sidewall of the memory opening, where the horizontal portion differs from the vertical portion by at least one of structure or composition, and selectively etching the horizontal portion selective to the vertical portion.
    Type: Application
    Filed: June 24, 2015
    Publication date: December 29, 2016
    Inventors: Rahul SHARANGPANI, Sateesh KOKA, Raghuveer S. MAKALA, Srikanth RANGANATHAN, Mark JUANITAS, Johann ALSMEIER