Patents by Inventor Mark K. Hadrick

Mark K. Hadrick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240029767
    Abstract: Methods, apparatuses, and systems related to die-to-die communications are described. An apparatus may include a master die and a slave die communicatively coupled to each other through an internal bus. The apparatus can be configured to use an internal command and/or a data clock to coordinate the storage/write operation at the slave die instead of or in addition to a command address clock.
    Type: Application
    Filed: July 19, 2022
    Publication date: January 25, 2024
    Inventor: Mark K. Hadrick
  • Patent number: 10832759
    Abstract: Memory devices with half-width data path or data buses clocked by double-pumped strobe signals are disclosed herein. The methods and devices may employ a single delay chain (e.g., a column access strobe (CAS) chain) to perform the double-pumped operations. The delay chain may include multiple delay elements that may generate one or two pulses based on the double-pumped strobe signals. Methods for interfacing, such as read and write methods are also disclosed.
    Type: Grant
    Filed: July 30, 2019
    Date of Patent: November 10, 2020
    Assignee: Micron Technology, Inc.
    Inventor: Mark K. Hadrick
  • Publication number: 20190355410
    Abstract: Memory devices with half-width data path or data buses clocked by double-pumped strobe signals are disclosed herein. The methods and devices may employ a single delay chain (e.g., a column access strobe (CAS) chain) to perform the double-pumped operations. The delay chain may include multiple delay elements that may generate one or two pulses based on the double-pumped strobe signals. Methods for interfacing, such as read and write methods are also disclosed.
    Type: Application
    Filed: July 30, 2019
    Publication date: November 21, 2019
    Inventor: Mark K. Hadrick
  • Patent number: 10388362
    Abstract: Memory devices with half-width data path or data buses clocked by double-pumped strobe signals are disclosed herein. The methods and devices may employ a single delay chain (e.g., a column access strobe (CAS) chain) to perform the double-pumped operations. The delay chain may include multiple delay elements that may generate one or two pulses based on the double-pumped strobe signals. Methods for interfacing, such as read and write methods are also disclosed.
    Type: Grant
    Filed: May 8, 2018
    Date of Patent: August 20, 2019
    Assignee: Micron Technology, Inc.
    Inventor: Mark K. Hadrick
  • Patent number: 9508409
    Abstract: Apparatuses and methods for implementing masked write commands are disclosed herein. An example apparatus may include a memory bank, a local buffer circuit, and an address control circuit. The local buffer circuit may be associated with the memory bank. The address control circuit may be coupled to the memory bank and configured to receive a command and an address associated with the command. The address control circuit may include a global buffer circuit configured to store the address. The address control circuit may further be configured to delay the command using one of a plurality of command paths based, at least in part, on a write latency and to provide the address stored in the global buffer circuit to the local buffer circuit to be stored therein.
    Type: Grant
    Filed: April 16, 2014
    Date of Patent: November 29, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Mark K. Hadrick, Jeffrey P. Wright, Victor Wong, Simon J. Lovett, Donald M. Morgan, William F. Jones, Sujeet Ayyapureddi, Dean D. Gans, Jongtae Kwak
  • Publication number: 20150302907
    Abstract: Apparatuses and methods for implementing masked write commands are disclosed herein. An example apparatus may include a memory bank, a local buffer circuit, and an address control circuit. The local buffer circuit may be associated with the memory bank. The address control circuit may be coupled to the memory bank and configured to receive a command and an address associated with the command. The address control circuit may include a global buffer circuit configured to store the address. The address control circuit may further be configured to delay the command using one of a plurality of command paths based, at least in part, on a write latency and to provide the address stored in the global buffer circuit to the local buffer circuit to be stored therein.
    Type: Application
    Filed: April 16, 2014
    Publication date: October 22, 2015
    Applicant: Micron Technology, Inc.
    Inventors: Mark K. Hadrick, Jeffrey P. Wright, Victor Wong, Simon J. Lovett, Donald M. Morgan, William F. Jones, Sujeet Ayyapureddi, Dean D. Gans, Jongtae Kwak