Abstract: A process chamber for making composite structures using CVI/CVD is provided. The process chamber has a plurality of compartments. Each compartment has its own equipment such as, for example, a substrate support structure, a gas inlet, a gas outlet, a cooling element and a heating element, and control system for independently controlling the process conditions for treating a substrate contained within.

Abstract: A containment structure is disclosed for holding a substrate (e.g., preform) during CVI/CVD treatment. The containment structure includes a support structure, a cover portion, a gas inlet and a gas outlet. During the CVI/CVD process, the substrate is contained within the containment structure, forming a first space between the support structure and the substrate, and a second space between the substrate and the cover portion. Reactant gas is introduced into the first space and forced through the substrate via delta pressure, forming a binding matrix within the substrate. Excess reactant gas exits the substrate into the second space and is removed from the containment structure through the gas outlet.