Abstract: A system includes a transmitter to drive a transmission signal via a first and second transmission line. One half of the transmission signal is applied to the first transmission line and the other half of the transmission signal is applied to the second transmission line. An antenna radiates the transmission signal from the transmitter and receives a reception signal. The reception signal is driven in the opposite direction of the transmission signal on the first and second transmission lines. A plurality of differential amplifiers receive the reception signal from different sections of the first and second transmission lines and generate amplified output signals to a receiver output path having a first and second receiver transmission line. The differential amplifiers reject the one half of the transmission signal applied to the first transmission line and the other half of the transmission signal applied to the second transmission line.

Abstract: A system includes a transmitter to drive a transmission signal via a first and second transmission line. One half of the transmission signal is applied to the first transmission line and the other half of the transmission signal is applied to the second transmission line. An antenna radiates the transmission signal from the transmitter and receives a reception signal. The reception signal is driven in the opposite direction of the transmission signal on the first and second transmission lines. A plurality of differential amplifiers receive the reception signal from different sections of the first and second transmission lines and generate amplified output signals to a receiver output path having a first and second receiver transmission line. The differential amplifiers reject the one half of the transmission signal applied to the first transmission line and the other half of the transmission signal applied to the second transmission line.

Abstract: The integrated, multiple independent, simultaneous signal software defined radio system architecture of this invention is suitable for many new very-low latency, software defined radio applications, both cognitive and conventional, including: communications networks, electronic warfare, surveillance and radar. The system supports multiple operations, locally controlled or remotely controlled, with simultaneous signals prosecutions and anti-jam system-to-system networking. New cognitive waveforms are defined that simultaneously seek to maximize data throughput in arbitrary spectral environments, while normally avoiding interference with current and new arbitrary signal occurrences.

Abstract: A power amplifier comprises a distributed pre-driver, digital signal adjuster, a distributed high power amplifier; and an integrated coupler-detector unit. The distributed pre-driver, the digital signal adjuster, the distributed high power amplifier and the integrated coupler-detector unit are formed at an interface of a Gallium Nitride layer and an Aluminum Gallium Nitride layer of a monolithic microwave integrated circuit device.

Abstract: A Schottky diode, and a method of making the same, which is fabricated on InP material and employs a Schottky layer including InxAl1−xAs with x>0.6, or else including a chirped graded supperlattice in which successive periods of the superlattice contain progressively less GaInAs and progressively more AlInAs, the increase in AlInAs being terminated before the proportion of AlInAs within the last period (adjacent the anode metal) exceeds 80%. Such fabrication creates an InP-based Schottky diode having a low turn-on voltage which may be predictably set within a range by adjusting the fabrication parameters.

Abstract: A Schottky diode, and a method of making the same, which is fabricated on InP material and a Schottky layer including InxAl1-xAs with x>0.6, or else including a chirped graded superlattice in which successive periods of the superlattice contain progressively less GaInAs and progressively more AlInAs, the increase in AlInAs being terminated before the proportion of AlInAs within the last period (adjacent the anode metal) exceeds 80%. Such fabrication creates an InP-based Schottky diode having a low turn-on voltage which may be predictably set within a range by adjusting the fabrication parameters.

Abstract: A Schottky diode, and a method of making the same, which is fabricated on InP material and employs a Schottky layer including InxAl1−xAS with x>0.6, or else including a chirped graded superlattice in which successive periods of the superlattice contain progressively less GaInAs and progressively more AlInAs, the increase in AlInAs being terminated before the proportion of AlInAs within the last period (adjacent the anode metal) exceeds 80%.