Patents by Inventor Mark Kalatsky

Mark Kalatsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7112465
    Abstract: Ultra thin back-illuminated photodiode array structures and fabrication methods. The photodiode arrays are back illuminated photodiode arrays having a substrate of a first conductivity type having first and second surfaces, the second surface having a layer of the first conductivity type having a greater conductivity than the substrate. The arrays also have a matrix of regions of a first conductivity type of a higher conductivity than the substrate extending from the first surface of the substrate to the layer of the first conductivity type having a greater conductivity than the substrate, a plurality of regions of the second conductivity type interspersed within the matrix of regions of the first conductivity type and not extending to the layer of the first conductivity type on the second surface of the substrate, and a plurality of contacts on the first surface for making electrical contact to the matrix of regions of the first conductivity type and the plurality of regions of the second conductivity type.
    Type: Grant
    Filed: June 8, 2004
    Date of Patent: September 26, 2006
    Assignee: Semicoa Semiconductors
    Inventors: Alexander O. Goushcha, Chris Hicks, Richard A. Metzler, Mark Kalatsky, Eddie Bartley, Dan Tulbure
  • Publication number: 20040262652
    Abstract: Ultra thin back-illuminated photodiode array structures and fabrication methods. The photodiode arrays are back illuminated photodiode arrays having a substrate of a first conductivity type having first and second surfaces, the second surface having a layer of the first conductivity type having a greater conductivity than the substrate. The arrays also have a matrix of regions of a first conductivity type of a higher conductivity than the substrate extending from the first surface of the substrate to the layer of the first conductivity type having a greater conductivity than the substrate, a plurality of regions of the second conductivity type interspersed within the matrix of regions of the first conductivity type and not extending to the layer of the first conductivity type on the second surface of the substrate, and a plurality of contacts on the first surface for making electrical contact to the matrix of regions of the first conductivity type and the plurality of regions of the second conductivity type.
    Type: Application
    Filed: June 8, 2004
    Publication date: December 30, 2004
    Inventors: Alexander O. Goushcha, Chris Hicks, Richard A. Metzler, Mark Kalatsky, Eddie Bartley, Dan Tulbure
  • Patent number: 6762473
    Abstract: Ultra thin back-illuminated photodiode array structures and fabrication methods. The photodiode arrays are back illuminated photodiode arrays having a substrate of a first conductivity type having first and second surfaces, the second surface having a layer of the first conductivity type having a greater conductivity than the substrate. The arrays also have a matrix of regions of a first conductivity type of a higher conductivity than the substrate extending from the first surface of the substrate to the layer of the first conductivity type having a greater conductivity than the substrate, a plurality of regions of the second conductivity type interspersed within the matrix of regions of the first conductivity type and not extending to the layer of the first conductivity type on the second surface of the substrate, and a plurality of contacts on the first surface for making electrical contact to the matrix of regions of the first conductivity type and the plurality of regions of the second conductivity type.
    Type: Grant
    Filed: June 25, 2003
    Date of Patent: July 13, 2004
    Assignee: Semicoa Semiconductors
    Inventors: Alexander O. Goushcha, Chris Hicks, Richard A. Metzler, Mark Kalatsky, Eddie Bartley, Dan Tulbure
  • Patent number: 5334874
    Abstract: A package for a semiconductor device includes multiple layers which are fused together to encapsulate the device in a package which has a size approaching the size of the unpackaged device. The compact package facilitates heat transfer from the device, thus making it particularly advantageous for high power applications. Electrical contacts with the device are provided as contact pads on the surface of the package. Primary materials used in construction of the package include glass and ceramics, although other materials such as resins and epoxy could also be used. The multiple layers comprising the package are welded or fused together without having any adhesive, solder, etc. between the layers. Thus, the assembly of the package is an efficient one step process wherein electrical and thermal contacts with the electronic device are made simultaneously with the sealing operation.
    Type: Grant
    Filed: September 13, 1991
    Date of Patent: August 2, 1994
    Inventors: Richard A. Metzler, Mark Kalatsky