Patents by Inventor Mark Kwan

Mark Kwan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240085174
    Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate.
    Type: Application
    Filed: August 21, 2023
    Publication date: March 14, 2024
    Applicant: NOVA MEASURING INSTRUMENTS INC.
    Inventors: Heath POIS, Wei T LEE, Lawrence BOT, Michael KWAN, Mark KLARE, Charles LARSON
  • Patent number: 5247213
    Abstract: An apparatus for controlling the power consumption of a programmable logic device which has a plurality of output signals comprising a programmable switch coupled to each one of the logic signal outputs of the programmable logic device. The programmable switch may include a sense amplifier coupled to each one of said logic signal outputs; a first transistor coupled between said amplifier and ground; a latch coupled to the gate of said first transistor; a second transistor responsive to a first control signal; and an electrically erasable programmable read only memory (EEPROM) cell, coupled to said latch and responsive to a second control signal, said second transistor and said EEPROM cell providing a state signal to said latch.
    Type: Grant
    Filed: May 8, 1990
    Date of Patent: September 21, 1993
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Cuong O. Trinh, Vincent Win, Mark Kwan