Abstract: A solution for managing a manufacturing environment using operating data for each of a plurality of tools in the manufacturing environment. The operating data can include actual resource consumption data and/or actual exhaust generation data for a tool while the tool implements at least a portion of a recipe to manufacture one of a plurality of types of products manufactured in the manufacturing environment. Operation of the manufacturing environment can be configured to optimize one or more aspects of resource consumption and/or exhaust generation during the manufacture of desired quantities of the plurality of types of products within a desired time frame using the operating data.

Abstract: A solution for managing a manufacturing environment using operating data for each of a plurality of tools in the manufacturing environment. The operating data can include actual resource consumption data and/or actual exhaust generation data for a tool while the tool implements at least a portion of a recipe to manufacture one of a plurality of types of products manufactured in the manufacturing environment. Operation of the manufacturing environment can be configured to optimize one or more aspects of resource consumption and/or exhaust generation during the manufacture of desired quantities of the plurality of types of products within a desired time frame using the operating data.

Abstract: A processing system and method. The processing system includes a processing tool, an electrostatic chuck (ESC) arranged within the processing tool, and a system that at least one of detects at least one of an ESC bias spike and an ESC current spike of the ESC and determines when an ESC bias voltage is zero or exceeds a threshold value. The method includes at least one of detecting at least one of an ESC bias spike and an ESC current spike of the ESC, and determining when an ESC bias voltage is zero or exceeds a threshold value. The system and method can be used in real time ESC and plasma processing diagnostics to minimize yield loss and wafer scrap.

Abstract: An apparatus for collecting data during processing of a structure, such as a semiconductor wafer, which includes data collection devices or sensors positioned in a processing chamber for processing the wafer. The data collection sensors may operate at speeds of about 10 Hertz (Hz). A controller communicates and receives data from the data collection sensors. A data processing device communicates with the controller for receiving and processing the data, and the data processing device analyzes the data and determines at least one process response.

Abstract: At least one substrate location sensor is provided on a piece of equipment containing two adjoined chambers between which substrates may be transferred one at a time. Deviation of substrate position from a predetermined optimal position is measured as a substrate is transferred between the two adjoined chambers. Measured data on the deviation of substrate position is entered into a statistical control program hosted in a computing means. The measured data indicates the level of performance of the robot and/or the condition of alignment of components in one of the two chambers. As the statistical control generates flags based on the measured data, maintenance activities may be performed. Thus, maintenance activities may be performed on a “as-needed” basis, determined by the measurement data on performance of the equipment.

Abstract: A processing system and method. The processing system includes a processing tool, an electrostatic chuck (ESC) arranged within the processing tool, and a system that at least one of detects at least one of an ESC bias spike and an ESC current spike of the ESC and determines when an ESC bias voltage is zero or exceeds a threshold value. The method includes at least one of detecting at least one of an ESC bias spike and an ESC current spike of the ESC, and determining when an ESC bias voltage is zero or exceeds a threshold value. The system and method can be used in real time ESC and plasma processing diagnostics to minimize yield loss and wafer scrap.

Abstract: A method and apparatus are provided for controlling a CVD process used to deposit films on semiconductor substrates wherein the by-products of the reaction are measured and monitored during the reaction preferably using mass spectrometry and the results used to calculate the concentrations of the by-products and to control the CVD reaction process based on the by-product concentrations. An exemplary CVD process is the deposition of tungsten metal on a semiconductor wafer. A preferred method and apparatus uses a capillary gas sampling device for removing the by-product gases of the reaction as a feed for the mass spectrometer. The capillary gas sampling device is preferably connected to a differential pump.

Abstract: A method and apparatus are provided for controlling a CVD process used to deposit films on semiconductor substrates wherein the by-products of the reaction are measured and monitored during the reaction preferably using mass spectrometry and the results used to calculate the concentrations of the by-products and to control the CVD reaction process based on the by-product concentrations. An exemplary CVD process is the deposition of tungsten metal on a semiconductor wafer. A preferred method and apparatus uses a capillary gas sampling device for removing the by-product gases of the reaction as a feed for the mass spectrometer. The capillary gas sampling device is preferably connected to a differential pump.