Patents by Inventor Mark Leonard O'Neill

Mark Leonard O'Neill has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200095502
    Abstract: Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic oxide particles as abrasives, such as ceria-coated silica particles or any other ceria-coated inorganic oxide particles as core particles; suitable chemical additives comprising at least one organic carboxylic acid group, at least one carboxylate salt group or at least one carboxylic ester group and two or more hydroxyl functional groups in the same molecule; and a water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.
    Type: Application
    Filed: September 20, 2019
    Publication date: March 26, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Joseph D. Rose, Krishna P. Murella, Hongjun Zhou, Mark Leonard O'Neill
  • Publication number: 20200048496
    Abstract: The present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic metal oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the first group of non-ionic organic molecules multi hydroxyl functional groups in the same molecule; chemical additives selected from the second group of aromatic organic molecules with sulfonic acid group or sulfonate salt functional groups and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.
    Type: Application
    Filed: August 6, 2019
    Publication date: February 13, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
  • Publication number: 20200051811
    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.
    Type: Application
    Filed: September 24, 2019
    Publication date: February 13, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Mark Leonard O'Neill, Manchao Xiao, Xinjian Lei, Richard Ho, Haripin Chandra, Matthew R. MacDonald, Meiliang Wang
  • Publication number: 20200032107
    Abstract: Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise water; abrasive; single chelator, dual chelators or tris chelators; morpholino family compounds as Cu dishing reducing agents. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide can be used in the formulations.
    Type: Application
    Filed: September 9, 2019
    Publication date: January 30, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Mark Leonard O'Neill
  • Publication number: 20200024515
    Abstract: This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.
    Type: Application
    Filed: July 12, 2019
    Publication date: January 23, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Chun Lu, Xiaobo Shi, Dnyanesh Chandrakant Tamboli, Reinaldo Mario Machado, Mark Leonard O'Neill, Matthias Stender
  • Publication number: 20200002574
    Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.
    Type: Application
    Filed: June 24, 2019
    Publication date: January 2, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
  • Publication number: 20200002607
    Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use a unique combination of abrasives, such as ceria coated silica particles; and the chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(?)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.
    Type: Application
    Filed: June 24, 2019
    Publication date: January 2, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
  • Publication number: 20200002608
    Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2: SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(?)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.
    Type: Application
    Filed: June 24, 2019
    Publication date: January 2, 2020
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Krishna P. Murella, Joseph D. Rose, Hongjun Zhou, Mark Leonard O'Neill
  • Publication number: 20190382619
    Abstract: Tungsten (W) chemical mechanical polishing (CMP) compositions and their related methods and systems are disclosed. The compositions comprise iron-ligand complexes or metal-ligand complexes as catalyst to induce the formation of hydroxyl radical to enhance oxidation rates of W film and provide high and tunable W film removal rates. The W chemical mechanical polishing (CMP) compositions can be used in wide pH range, therefore, provide highly tunable W: oxide or barrier layer selectivity. The compositions afford low dishing and low erosion levels.
    Type: Application
    Filed: June 5, 2019
    Publication date: December 19, 2019
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Chun Lu, Mark Leonard O'Neill
  • Publication number: 20190359868
    Abstract: Composite particles with lower mean particle size and smaller size distribution are obtained through refining treatments. The refined composite particles, such as ceria coated silica particles are used in Chemical Mechanical Planarization (CMP) compositions to offer higher removal rate; very low within wafer (WWNU) for removal rate, low dishing and low defects for polishing oxide films.
    Type: Application
    Filed: August 6, 2019
    Publication date: November 28, 2019
    Applicant: Versum Materials US, LLC.
    Inventors: Hongjun Zhou, John Edward Quincy Hughes, Krishna P. Murella, Reinaldo Mario Machado, Mark Leonard O'Neill, Dnyanesh Chandrakant Tamboli
  • Publication number: 20190352535
    Abstract: Tungsten chemical mechanical polishing (CMP) buff or barrier compositions and related method and system are disclosed. The compositions comprise abrasive; solid state or water soluble catalyst; corrosion inhibitor for W of an oligomer or polymer comprising ethyleneimine unit, propyleneimine unit, and combinations thereof; chemical additive of polystyrene sulfonic acid or polyacrylic acid, their ammonium salts, potassium salt or sodium salts having molecular weight ranged from 1,000 to 2,000,000; solvent; and acidic pH. The compositions afford low dishing and low erosion levels in the polished substrate while simultaneously afford relative high oxide removal rates, high barrier film removal rates and low W removal rates.
    Type: Application
    Filed: May 16, 2019
    Publication date: November 21, 2019
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, Dennis Kim, Chun Lu, Mark Leonard O'Neill
  • Patent number: 10465096
    Abstract: Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise water; abrasive; single chelator, dual chelators or tris chelators; morpholino family compounds as Cu dishing reducing agents. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide can be used in the formulations.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: November 5, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Xiaobo Shi, Mark Leonard O'Neill
  • Patent number: 10460929
    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.
    Type: Grant
    Filed: April 5, 2017
    Date of Patent: October 29, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Mark Leonard O'Neill, Manchao Xiao, Xinjian Lei, Richard Ho, Haripin Chandra, Matthew R. MacDonald, Meiliang Wang
  • Patent number: 10453675
    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.
    Type: Grant
    Filed: September 11, 2014
    Date of Patent: October 22, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Mark Leonard O'Neill, Manchao Xiao, Xinjian Lei, Richard Ho, Haripin Chandra, Matthew R. MacDonald, Meiliang Wang
  • Patent number: 10421890
    Abstract: Composite particles with lower mean particle size and smaller size distribution are obtained through refining treatments. The refined composite particles, such as ceria coated silica particles are used in Chemical Mechanical Planarization (CMP) compositions to offer higher removal rate; very low within wafer (WWNU) for removal rate, low dishing and low defects for polishing oxide films.
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: September 24, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Hongjun Zhou, John Edward Quincy Hughes, Krishna P. Murella, Reinaldo Mario Machado, Mark Leonard O'Neill, Dnyanesh Chandrakant Tamboli
  • Publication number: 20190287798
    Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film comprising: a precursor comprising at least one compound selected from the group consisting of: an organoaminosilane having a formula of R8N(SiR9LH)2, wherein R8, R9, and L are defined herein. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).
    Type: Application
    Filed: April 29, 2019
    Publication date: September 19, 2019
    Applicant: Versum Materials US, LLC
    Inventors: Manchao Xiao, Xinjian Lei, Ronald Martin Pearlstein, Haripin Chandra, Eugene Joseph Karwacki, Bing Han, Mark Leonard O'Neill
  • Publication number: 20190189431
    Abstract: Atomic layer deposition (ALD) process formation of silicon oxide with temperature>500° C. is disclosed.
    Type: Application
    Filed: January 23, 2019
    Publication date: June 20, 2019
    Applicant: Versum Materials US, LLC
    Inventors: Haripin Chandra, Meiliang Wang, Manchao Xiao, Xinjian Lei, Ronald Martin Pearlstein, Mark Leonard O'Neill
  • Patent number: 10319584
    Abstract: Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R5Si(NR3R4)xH3-x wherein x=1, 2, 3; an organoalkoxyalkylsilane having a formula of R6Si(OR7)xH3-x wherein x=1, 2, 3; an organoaminosilane having a formula of R8N(SiR9(NR10R11)H)2; an organoaminosilane having a formula of R8N(SiR9LH)2 and combinations thereof; and optionally a second precursor comprising a compound having the formula: Si(NR1R2)H3. Also described herein are methods for depositing a carbon-doped silicon-containing film using the composition wherein the method is one selected from the following: cyclic chemical vapor deposition (CCVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD) and plasma enhanced CCVD (PECCVD).
    Type: Grant
    Filed: August 10, 2016
    Date of Patent: June 11, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Manchao Xiao, Xinjian Lei, Ronald Martin Pearlstein, Haripin Chandra, Eugene Jospeh Karwacki, Jr., Bing Han, Mark Leonard O'Neill
  • Patent number: 10319862
    Abstract: Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350° C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cm3 or greater; a hydrogen content of about 4×1022 cm?3 or less, and a transparency of about 90% or greater at 400-700 nm as measured by a UV-visible light spectrometer.
    Type: Grant
    Filed: March 8, 2013
    Date of Patent: June 11, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Robert Gordon Ridgeway, Andrew David Johnson, Anupama Mallikarjunan, Raymond Nicholas Vrtis, Xinjian Lei, Mark Leonard O'Neill, Manchao Xiao, Jianheng Li, Michael T. Savo
  • Publication number: 20190172720
    Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. Dual, or at least two chelators were used in the CMP polishing compositions as complexing agents for achieving the unique synergetic effects to afford high, tunable Co removal rates and with low static etch rates on Co film surface for the efficient Co corrosion protection during CMP process. The cobalt chemical mechanical polishing compositions also provide very high selectivity of Co film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric film, such as TEOS, SiNx, low-k, and ultra low-k films.
    Type: Application
    Filed: January 11, 2019
    Publication date: June 6, 2019
    Applicant: Versum Materials US, LLC
    Inventors: Xiaobo Shi, James Allen Schlueter, Mark Leonard O'Neill