Abstract: Coated substrates containing at least one barrier layer comprising hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm3 and at least one barrier layer selected from aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium, titanium oxide, titanium nitride, and titanium oxynitride.

Abstract: Coated substrates containing a barrier layer comprising hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm3 and methods of preparing the coated substrates.

Abstract: An organic light-emitting diode comprising a first and second barrier coating, wherein the barrier coating is selected from (i) amorphous silicon carbide, (ii) an amorphous silicon carbide alloy comprising at least one element selected from F, N, B, and P, (iii) hydrogenated silicon oxycarbide, (iv) a coating prepared by (a) curing a hydrogen silsesquioxane resin with an electron beam or (b) reacting a hydrogen silsesquioxane resin using a chemical vapor deposition process; and (v) a mutilayer combination of at least two of (i), (ii), (iii), and (iv).

Abstract: A method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises using plasma-assisted polymerization to react a cyclic silane compound containing at least one strained silicon bond to produce the films. The resulting films are useful in the formation of semiconductor devices.