Patents by Inventor Mark Monroe Banaszak Holl

Mark Monroe Banaszak Holl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Recycling of superabsorbent polymer via hydrothermal microwave processing
    Patent number: 11396587
    Abstract: Poly(acrylic acid)-based superabsorbent polymer (SAP) and H2O2 in a feed is converted with microwave (MW) irradiation into poly(acrylic acid) (PAA) in the product. The MW total energy used to convert SAP into PAA is less than 50 MJ/kg SAP.
    Type: Grant
    Filed: August 21, 2020
    Date of Patent: July 26, 2022
    Assignee: The Procter & Gamble Company
    Inventors: Mark Monroe Banaszak Holl, Akshat Tanksale, Teck Wei Ching, Jing Zhang, Dimitris Ioannis Collias, John Andrew McDaniel, Gary Wayne Gilbertson, Martin Ian James, Arsen Arsenov Simonyan
  • Recycling of Superabsorbent Polymer Via Hydrothermal Microwave Processing
    Publication number: 20210054164
    Abstract: Poly(acrylic acid)-based superabsorbent polymer (SAP) and H2O2 in a feed is converted with microwave (MW) irradiation into poly(acrylic acid) (PAA) in the product. The MW total energy used to convert SAP into PAA is less than 50 MJ/kg SAP.
    Type: Application
    Filed: August 21, 2020
    Publication date: February 25, 2021
    Inventors: Mark Monroe Banaszak Holl, Akshat Tanksale, Teck Wei Ching, Jing Zhang, Dimitris Ioannis Collias, John Andrew McDaniel, Gary Wayne Gilbertson, Martin Ian James, Arsen Arsenov Simonyan
  • Nitrogen-rich barrier layer and structures formed
    Publication number: 20030203653
    Abstract: The present invention discloses a method for forming a layer of nitrogen and silicon containing material on a substrate by first providing a heated substrate and then flowing a gas which has silicon and nitrogen atoms but no carbon atoms in the same molecule over said heated substrate at a pressure of not higher than 500 Torr, such that a layer of nitrogen and silicon containing material is formed on the surface. The present invention is further directed to a composite structure that includes a substrate and a layer of material containing nitrogen and silicon but not carbon overlying the substrate for stopping chemical species from reaching the substrate. The present invention is further directed to a structure that includes a semiconducting substrate, a gate insulator on the substrate, a nitrogen-rich layer on top of the gate insulator, and a gate electrode on the nitrogen-rich layer, wherein the nitrogen-rich layer blocks diffusion of contaminating species from the gate electrode to the gate insulator.
    Type: Application
    Filed: May 2, 2003
    Publication date: October 30, 2003
    Applicant: International Business Machines Corporation
    Inventors: Douglas Andrew Buchanan, Matthew Warren Copel, Fenton Read McFeely, Patrick Ronald Varekamp, Mark Monroe Banaszak Holl, Kyle Erik Litz
  • Nitrogen-rich barrier layer and structures formed
    Publication number: 20030190821
    Abstract: The present invention discloses a method for forming a layer of nitrogen and silicon containing material on a substrate by first providing a heated substrate and then flowing a gas which has silicon and nitrogen atoms but no carbon atoms in the same molecule over said heated substrate at a pressure of not higher than 500 Torr, such that a layer of nitrogen and silicon containing material is formed on the surface. The present invention is further directed to a composite structure that includes a substrate and a layer of material containing nitrogen and silicon but not carbon overlying the substrate for stopping chemical species from reaching the substrate. The present invention is further directed to a structure that includes a semiconducting substrate, a gate insulator on the substrate, a nitrogen-rich layer on top of the gate insulator, and a gate electrode on the nitrogen-rich layer, wherein the nitrogen-rich layer blocks diffusion of contaminating species from the gate electrode to the gate insulator.
    Type: Application
    Filed: May 2, 2003
    Publication date: October 9, 2003
    Applicant: International Business Machines Corporation
    Inventors: Douglas Andrew Buchanan, Matthew Warren Copel, Fenton Read McFeely, Patrick Ronald Varekamp, Mark Monroe Banaszak Holl, Kyle Erik Litz
  • Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquixane resins
    Publication number: 20030134136
    Abstract: Changes in the infrared reflection spectrum of a thin film of silica-like resinous material sandwiched between metal electrodes can be induced by applying an electric potential to a top electrode which is semitransparent. Characteristic infrared absorption lines change in proportion to a small electric current flowing through the material. These changes occur with response times of the order of seconds, and show time constants of the order of minutes to reach stationary values.
    Type: Application
    Filed: January 30, 2003
    Publication date: July 17, 2003
    Applicant: The Regents of the University of Michigan
    Inventors: Mark Angelo Biscotto, Mark Monroe Banaszak Holl, Bradford Grant Orr, Udo C. Pernisz
  • Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquioxane resins
    Patent number: 6572974
    Abstract: Changes in the infrared reflection spectrum of a thin film of silica-like resinous material sandwiched between metal electrodes can be induced by applying an electric potential to a top electrode which is semitransparent. Characteristic infrared absorption lines change in proportion to a small electric current flowing through the material. These changes occur with response times of the order of seconds, and show time constants of the order of minutes to reach stationary values.
    Type: Grant
    Filed: December 6, 1999
    Date of Patent: June 3, 2003
    Assignee: The Regents of the University of Michigan
    Inventors: Mark Angelo Biscotte, Mark Monroe Banaszak Holl, Bradford Grant Orr, Udo C. Pernisz
  • Nitrogen-rich barrier layer and structures formed
    Patent number: 6566281
    Abstract: The present invention discloses a method for forming a layer of nitrogen and silicon containing material on a substrate by first providing a heated substrate and then flowing a gas which has silicon and nitrogen atoms but no carbon atoms in the same molecule over said heated substrate at a pressure of not higher than 500 Torr, such that a layer of nitrogen and silicon containing material is formed on the surface. The present invention is further directed to a composite structure that includes a substrate and a layer of material containing nitrogen and silicon but not carbon overlying the substrate for stopping chemical species from reaching the substrate. The present invention is further directed to a structure that includes a semiconducting substrate, a gate insulator on the substrate, a nitrogen-rich layer on top of the gate insulator, and a gate electrode on the nitrogen-rich layer, wherein the nitrogen-rich layer blocks diffusion of contaminating species from the gate electrode to the gate insulator.
    Type: Grant
    Filed: December 1, 1997
    Date of Patent: May 20, 2003
    Assignee: International Business Machines Corporation
    Inventors: Douglas Andrew Buchanan, Matthew Warren Copel, Fenton Read McFeely, Patrick Ronald Varekamp, Mark Monroe Banaszak Holl, Kyle Erik Litz